Publications

Levon V. Asryan

Review chapters on theory of quantum dot lasers

  1. L.V. Asryan and R.A. Suris. "Theory of threshold characteristics of quantum dot lasers: Effect of quantum dot parameter dispersion." Chapter 5 in Selected Topics in Electronics and Systems, vol. 25, "Quantum Dots." Edited by E. Borovitskaya and M.S. Shur, Singapore: World Scientific, 2002. 206 p.

Review papers on theory of quantum dot lasers

  1. L.V. Asryan and R.A. Suris. "Theory of threshold characteristics of quantum dot lasers: Effect of quantum dot parameter dispersion." International J. High Speed Electron. Syst., Special Issue on "Quantum Dot Heterostructures - Fabrication, Application, Theory," vol. 12, no. 1, pp. 111-176, Mar. 2002.

Chapters on theory of quantum dot lasers

  1. L.V. Asryan and S. Luryi. "Temperature-insensitive semiconductor laser". Future Trends in Microelectronics: The Nano Millennium. Ed. by S. Luryi, J.M. Xu, and A. Zaslavsky, Wiley Interscience, New York, 2002. pp. 219-230.

Journal papers on quantum dot lasers

  1. L.V. Asryan, S. Luryi and R.A. Suris. "Internal efficiency of semiconductor lasers with a quantum-confined active region." IEEE J. Quantum Electron., vol. 39, no. 3, pp. 404-418, March 2003.
  2. L.V. Asryan and S. Luryi. "Temperature-insensitive semiconductor quantum dot laser." Solid-State Electron., vol. 47, no. 2, pp. 205-212, Feb. 2003.
  3. L.V. Asryan, S. Luryi and R.A. Suris. "Intrinsic nonlinearity of the light-current characteristic of semiconductor lasers with a quantum-confined active region." Appl. Phys. Lett., vol. 81, no. 12, pp. 2154-2156, Sept. 2002.
  4. L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg. "Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser". J. Appl. Phys., vol. 90, no. 3, pp. 1666-1668, Aug. 2001.
  5. L.V. Asryan and S. Luryi. "Tunneling-injection quantum-dot laser: ultrahigh temperature stability". IEEE J. Quantum Electron., vol. 37, no. 7, pp. 905-910, July 2001.
  6. M.V. Maximov, L.V. Asryan, Yu.M. Shernyakov, A.F. Tsatsul'nikov, I.N. Kaiander, V.V. Nikolaev, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N. Ledenstov, and D. Bimberg. "Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation". IEEE J. Quantum Electron., vol. 37, no. 5, pp. 676-683, May 2001.
  7. L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, and D. Bimberg. "Effect of excited-state transitions on the threshold characteristics of a quantum dot laser". IEEE J. Quantum Electron., vol. 37, no. 3, pp. 418-425, March 2001.
  8. L.V. Asryan and R.A. Suris. "Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing". Semicond., vol. 35, no. 3, pp. 343-346, March 2001.
  9. L.V. Asryan and R.A. Suris. "Longitudinal spatial hole burning in a quantum-dot laser". IEEE J. Quantum Electron., vol. 36, no. 10, pp. 1151-1160, Oct. 2000.
  10. L.V. Asryan and R.A. Suris. "Spatial hole burning and multimode generation threshold in quantum-dot lasers". Appl. Phys. Lett., vol. 74, no. 9, pp. 1215-1217, March 1999.
  11. L.V. Asryan and R.A. Suris. "Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers". Semicond., vol. 33, no. 9, pp. 981-984, Sept. 1999.
  12. L.V. Asryan and R.A. Suris. "Temperature dependence of the threshold current density of a quantum dot laser". IEEE J. Quantum Electron., vol. 34, no. 5, pp. 841-850, May 1998.
  13. L.V. Asryan and R.A. Suris. "Theory of the threshold current of a semiconductor quantum dot laser". Ioffe Institute Prize Winners, 1998. pp. 52-59.
  14. L.V. Asryan and R.A. Suris. "Characteristic temperature of quantum dot laser". Electron. Lett., vol. 33, no. 22, pp. 1871- 1872, Oct. 1997.
  15. L.V. Asryan and R.A. Suris. "Charge neutrality violation in quantum dot lasers". IEEE J. Select. Topics Quantum Electron., vol. 3, no. 2, pp. 148-157, Apr. 1997.
  16. L.V. Asryan and R.A. Suris. "Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser". Semicond. Sci. Technol., vol. 11, no. 4, pp. 554-567, Apr. 1996.

Journal papers on quantum well lasers
  1. L.V. Asryan, N.A. Gun'ko, A.S. Polkovnikov, G.G. Zegrya, R.A. Suris, P.-K. Lau, and T. Makino. "Threshold characteristics of InGaAsP/InP multiple quantum well lasers". Semicond. Sci. Technol., vol. 15, no. 12, pp. 1131-1140, Dec. 2000.
  2. L.V. Asryan, N.A. Gun'ko, A.S. Polkovnikov, R.A. Suris, G.G. Zegrya, B.B. Elenkrig, S. Smetona, J.G. Simmons, P.-K. Lau, and T. Makino. "High power and high temperature operation of InGaAsP/InP multiple quantum well lasers". Semicond. Sci. Technol., vol. 14, no. 12, pp. 1069-1075, Dec. 1999.

Journal papers on other subjects

  1. L.V. Asryan, S.G. Petrosyan, and A.Ya. Shik. "Tunnel current across a contact with a two-dimensional electron gas". Sov. Phys. Semicond., vol. 24, no. 12, pp. 1316-1318, Dec. 1990.
  2. L.V. Asryan and A.Ya. Shik. "Capture of nonequilibrium carriers and kinetics of the photoresponse of p-n junctions". Sov. Phys. Semicond., vol. 22, no. 12, pp. 1388-1390, Dec. 1988.
  3. L.V. Asryan and A.Ya. Shik. "Reverse current and photocurrent flowing through a p-n junction with a high concentration of recombination centers". Sov. Phys. Semicond., vol. 22, no. 4, pp. 383-386, Apr. 1988.
  4. L.V. Asryan, S.G. Petrosyan, and A.Ya. Shik. "Nonequilibrium carriers in inhomogeneous semiconductors". Sov. Phys. Semicond., vol. 21, no. 10, pp. 1070-1073, Oct. 1987.
  5. L.V. Asryan, Yu.A. Polovko, and A.Ya. Shik. "Separation and recombination of nonequilibrium carriers in the space charge region of a p-n junction". Sov. Phys. Semicond., vol. 21, no. 5, pp. 538-541, May 1987.
  6. L.V. Asryan, S.G. Petrosyan, and A.Ya. Shik. "Distribution of nonequilibrium carriers and photoconductivity in inhomogeneous semiconductors". JETP Lett., vol. 45, no. 4, pp. 232-234, Feb. 1987.

Other publications

CLEO Proceedings

  1. L.V. Asryan, S. Luryi and R.A. Suris. "Theory of high power performance of a quantum dot laser". Technical Digest of CLEO'2002. Long Beach, CA, USA, 19-24 May 2002. pp. 600-601.

IEEE/LEOS Proceedings

  1. L.V. Asryan and R.A. Suris. "Critical tolerable parameters of a quantum dot laser structure". IEEE/LEOS Summer Topical Meeting on Nanostructures and Quantum Dots. San Diego, CA, USA, 26-27 July 1999. Conference Digest, pp. 9-10.
  2. L.V. Asryan and R.A. Suris. "Spatial hole burning and multimode generation threshold in quantum dot lasers". Proceedings of IEEE LEOS 11th Annual Meeting, Orlando, FL, December 1-4, 1998. vol. 1, pp. 113-114.
  3. L.V. Asryan, N.A. Gun'ko, A.S. Polkovnikov, G.G. Zegrya, and R.A. Suris, B.B. Elenkrig, S. Smetona, J.G. Simmons, P.-K. Lau and T. Makino. "Heating effect on light-current characteristics of multiple quantum well lasers". Proceedings of IEEE LEOS 11th Annual Meeting, Orlando, FL, December 1-4, 1998. vol. 2, pp. 108-109.
  4. L.V. Asryan and R.A. Suris. "Theoretical analysis of the temperature dependence of threshold current density of a quantum dot laser". Proceedings of IEEE LEOS 10th Annual Meeting, San Francisco, CA, November 10-13, 1997. vol. 2, pp. 496-497.
  5. L.V. Asryan and R.A. Suris. "To the theory of quantum dot lasers: self-consistent consideration of quantum dot charge". 15th IEEE International Semiconductor Laser Conference. Haifa, Israel, October 13-18, 1996. Conference Digest, pp. 107-108.

SPIE's Proceedings

  1. L.V. Asryan and S. Luryi. "Tunneling-injection quantum dot laser". Proceedings of SPIE's International Symposium PHOTONICS WEST'2002. San Jose, CA, USA, 19-25 January 2002. vol. 4656, pp. 59-68.
  2. L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, and D. Bimberg. "Effect of excited-state transitions on the threshold characteristics of a quantum dot laser". Proceedings of SPIE's International Symposium PHOTONICS WEST'2000. San Jose, CA, USA, 22-28 January 2000. vol. 3944, pp. 823-834.
  3. L.V. Asryan and R.A. Suris. "Spatial hole burning in a quantum dot laser". Proceedings of SPIE's International Symposium PHOTONICS WEST'99. San Jose, CA, USA, 23-39 January 1999. vol. 3625, pp. 293-301.
  4. L.V. Asryan and R.A. Suris. "Temperature sensitivity of threshold current density of a quantum dot laser". Proceedings of SPIE's International Symposium PHOTONICS WEST'98. San Jose, CA, USA, 26-30 January 1998. vol. 3283, pp. 816-827.
  5. R.A. Suris and L.V. Asryan. "Quantum-dot laser: gain spectrum inhomogeneous broadening and threshold current". Proceedings of SPIE's 1995 International Symposium PHOTONICS WEST'95. San Jose, CA, USA, 4-10 February 1995. vol. 2399, pp. 433-444.

Proceedings of the International Conferences on the Physics of Semiconductors

  1. L.V. Asryan and R.A. Suris. "Spatial hole burning in quantum dot lasers". Proceedings of the 24rd International Conference on the Physics of Semiconductors. Jerusalem, Israel, August 2-7, 1998. Editor D. Gershoni, World Scientific, Singapore, Electronic version (CD).
  2. L.V. Asryan and R.A. Suris. "Charge neutrality violation in quantum dot lasers". Proceedings of the 23rd International Conference on the Physics of Semiconductors. Berlin, Germany, July 21-26, 1996. Editors M. Scheffler, R. Zimmermann, World Scientific, Singapore, vol. 2, pp. 1369-1372.

Proceedings of the International Symposia "Nanostructures: Physics and Technology"

  1. L.V. Asryan and R.A. Suris. "Theory of threshold characteristics of quantum dot lasers". Proceedings of International Symposium "Nanostructures: Physics and Technology". June 18-23, 2000, St.Petersburg, Russia. pp. 6-11.
  2. L.V. Asryan and R.A. Suris. "Effect of spatial hole burning and multi-mode generation threshold in quantum dot lasers". Proceedings of International Symposium "Nanostructures: Physics and Technology". June 22-26, 1998, St.Petersburg, Russia. pp. 390-393.
  3. L.V. Asryan and R.A. Suris. "Effect of carrier recombination in the optical confinement layer on the temperature dependence of threshold current density of a quantum dot laser". Proceedings of International Symposium "Nanostructures: Physics and Technology". June 23-27, 1997, St.Petersburg, Russia. pp. 176-179.
  4. L.V. Asryan and R.A. Suris. "Gain and Current Density of Quantum Dot Laser". Proceedings of International Symposium "Nanostructures: Physics and Technology". June 24-28, 1996, St.Petersburg, Russia. pp. 354-357.
  5. L.V. Asryan and R.A. Suris. "Linewidth Broadening and Threshold Current Density of Quantum-Box Laser". Proceedings of International Symposium "Nanostructures: Physics and Technology". June 20-24, 1994, St.Petersburg, Russia. pp. 181-184.

Proceedings of the International Semiconductor Device Research Symposia

  1. L.V. Asryan and S. Luryi. "Temperature-insensitive quantum dot laser". Proceedings of 2001 International Semiconductor Device Research Symposium - ISDRS'2001. Holiday Inn Georgetown, Washington, DC, December 5-7, 2001. pp. 359-363.
  2. L.V. Asryan and R.A. Suris. "To the theory of temperature dependence of threshold current density of a quantum dot laser". Proceedings of 1997 International Semiconductor Device Research Symposium - ISDRS'97. Omni Charlottesville Hotel, Charlottesville, VA, December 10-13, 1997. pp. 433-436.

Proceedings of other Conferences

  1. L.V. Asryan and R.A. Suris. "Theory of threshold characteristics of quantum dot lasers". Abstracts of the 3rd Belarusian-Russian Workshop "Semiconductor lasers and systems". Minsk, Belarus, June 22-24, 1999. p. 12.
  2. L.V. Asryan and R.A. Suris. "Temperature dependence of threshold current density of quantum dot laser". 10th International Conference on Superlattices, Microstructures and Microdevices. Lincoln, Nebraska, July 8-11, 1997. Conference Digest.
  3. R.A. Suris and L.V. Asryan. "Threshold current density of a semiconductor quantum dot laser". Proceedings of the 8th Seoul International Symposium on the Physics of Semiconductors and Applications - ISPSA'96, Seoul, Korea, October 21-22, 1996. p. 42.
  4. L.V. Asryan and R.A. Suris. "Theory of threshold characteristics of quantum dot lasers". Abstracts of the 3rd Belarusian-Russian Workshop "Semiconductor lasers and systems". Minsk, Belarus, June 22-24, 1999. p. 12.
  5. R.A. Suris and L. Asryan. "Quantum dot lasers: theoretical analysis of performance". Summaries of Advanced Workshop on Frontiers in Electronics (WOFE 99). Hotel de Paris, Villard de Lans (Grenoble area), France, May 31 - June 4, 1999. p. 52.
  6. L.V. Asryan and R.A. Suris. "Theory of quantum dot lasers". Summaries of International Conference "Physics at the Turn of the 21st Century". September 28 - October 2, 1998, St.Petersburg, Russia. p. 76.
  7. L.V. Asryan and R.A. Suris. "Longitudinal spatial hole burning and multimode generation threshold in quantum dot lasers". Summaries of International Conference "Physics at the Turn of the 21st Century". September 28 - October 2, 1998, St.Petersburg, Russia. p. 90.
  8. R.A. Suris and L.V. Asryan. "Theory of quantum dot lasers". Bulletin of the Stefan University. Series II. Book of Abstracts. Advanced - Topics Research School "SEMICONDUCTOR SCIENCE and TECHNOLOGY" Organized by La Jolla International School of Physics and The Institute for Advanced Physics Studies, September 7-11, 1998, La Jolla, California. vol. 10, no. 11, pp. 71-72, September 1998. (ISSN: 1098-1632)
  9. L.V. Asryan and R.A. Suris. "Effect of carrier escapes from quantum dots on the multi-mode generation threshold in quantum dot lasers". Proceedings of the 11th International Conference on Superlattices, Microstructures and Microdevices. Hurgada, Egypt, July 27-August 1, 1998.
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