Affiliation:  Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg, Russia

Born: 11.07.1954 in Stanivtsy Village, Glybokski District, Chernovtsy Region, Ukraine

RESEARCH INTERESTS

• Nanotechnologies in physics, biology, and medicine
• Heterostructures and superlattices
• Quantum wells, wires, and dots
• Auger recombination in bulk semiconductors and nanostructures
• Auger engineering
• Quantum Hall effect
• Luminescence in semiconductors and nanostructures
• Semiconductor heterojunction-based lasers

EDUCATION

EMPLOYMENT

Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg, Russia:

TEACHING EXPERIENCE

St. Petersburg State Polytechnical University, St. Petersburg, Russia:

St. Petersburg State Electrotechnical University, St. Petersburg, Russia:

Academical Physical-Technological University (APTU) of the Russian Academy of Sciences, St. Petersburg, Russia:

PROFESSIONAL COUNCILS AND SEMINARS

HONORS AND AWARDS

• Diploma of Honour of the Russian Academy of Science (1999)
• Prizes for the Best Papers of Ioffe Institute (1992–1999)
• Russian Presidential Award Given to Outstanding Scientists (1997)

MAIN ACHIEVEMENTS

• Organisation of Interdepartmental Center "Nanotechnologies for Biology and Medicine" joining efforts of many physical, biological, and medical institutes for the purpose of solving the cancer problem
• Participation in the creation and organisation of master and postgraduate learning of Academic Physical-Technological University of RAS
• A new method of biological molecule diagnostics (amino acids) using semiconductor quantum dots
• Theoretical investigation of surface Auger recombination in heterostructures
• A new approach to the theory of Auger recombination processes in quantum wells
• Invention of rare earth laser (in cooperation with V. F. Masterov)

PUBLICATIONS

• More than 220 papers published in Russian, Ukrainian, American and other journals that have to do with the theory of electric, photoelectric, optical phenomena in semiconductors, in semiconductor structures and optoelectronic devices, physics of semiconductor lasers and nanostructures.
• One patent.

BOOKS PUBLISHED OR EDITED

1. Zegrya G. G., Perel V. I. Fundamentals of Semiconductor Physics. Textbook recommended by the Ministry of Education and Science to physics students. Moscow: Fizmatlit, 2009, 336 p. (in Russian).
2. Veksler M. I., Zegrya G. G. Calculation of Permanent Electrical Fields. Manual, St. Petersburg, Ioffe Physical-Technical Institute of RAS, 2003, 64 p. (in Russian).
3. Veksler M. I., Zegrya G. G. Calculation of Permanent Magnetic Fields. Manual, St. Petersburg, Ioffe Physical-Technical Institute of RAS, 2003, 64 p. (in Russian).
4. Vorobjev L. E., Danilov S. N., Zegrya G. G., Firsov D. A., Shalygin V. A., Yassievich I. N., Beregulin E. I. Photoelectrical Phenomena in Semiconductor and Quantum-Dimensional Structures. Manual, ed. L. E. Vorobjev, St. Petersburg: Science, 2001, 248 p. (in Russian).
5. Parshin D. A., Zegrya G. G., Masterov V. F. Oscillations. Manual, St. Petersburg: St. Petersburg Institute of Nuclear Physics, 1999, 48 p. (in Russian).
6. Masterov V. F., Parshin D. A., Zegrya G. G. Angular Momentum. Dynamics of Solid State. Manual, St. Petersburg: St. Petersburg Institute of Nuclear Physics, 1999, 47 p. (in Russian).
7. Parshin D. A., Zegrya G. G., Masterov V. F. Kinematics of a Material Point. Manual, St. Petersburg: St. Petersburg Institute of Nuclear Physics, 1998, 43 p. (in Russian).
8. Zegrya G. G., Masterov V. F., Parshin D. A. Dynamics of a Material Point. Manual, St. Petersburg: St. Petersburg Institute of Nuclear Physics, 1998, 44 p. (in Russian).
9. Zegrya G. G., Veksler M. I. Quantum Mechanical Problems. Manual, Preprint No. 1685, St. Petersburg: Ioffe Physical-Technical Institute,1997, 70 p. (in Russian).
10. Zegrya G. G., Veksler M. I. Elementary Quantum Mechanical Problems. Manual, Preprint No. 1686, St. Petersburg: Ioffe Physical-Technical Institute, 1997, 70 p. (in Russian).
11. Lev E. Gurevich. Memoirs of Friends, Colleagues, and Followers. Collected Works, ed. V. I. Perel and G. G. Zegrya. St. Petersburg: Ioffe Physical-Technical Institute, 1997 (in Russian).
12. Gelmont B. L., Zegrya G. G. Fundamentals of Band Theory of Semiconductors (Part II). Preprint of Ioffe Physical-Technical Institute No. 1331, Leningrad, 1989, 42 p. (in Russian).
13. Gelmont B. L., Zegrya G. G. Fundamentals of Band Theory of Semiconductors (Part I), Preprint of Ioffe Physical-Technical Institute No. 1330, Leningrad, 1989, 61 p.(in Russian).
14. Bodiul P. P., Gizu D. V., Dolma V. A., Migley M. F., Zegrya G. G. Thermoelectromotive Force of Thread-Like Bismuth Crystals. In: Excitons and Biexcitons in Semiconductors, Kishinev, Shtiyinza, 1982 (in Russian).
15. Zegrya G. G. Mid-Infrared Strained Diode Lasers. In: Antimonide-Related Strained-Layer Heterostructures, ed. M. O. Manasreh, Gordon and Breach Science Publishers, Amsterdam, The Netherlands, 1997.

INTERNET PUBLICATIONS

1. Zegrya G. G. Interactive Database: New Semiconductor Materials. Characteristics and Properties.St. Petersburg: Ioffe Physical-Technical Institute, RAS, 2002.
2. Parshin D. A., Zegrya G. G. Course in General Physics: Classical Mechanics, Special Relativity, General Relativity. February 2001. The Latest Update is made on 31.01.2003 by the Department of Research and Technology of the Ioffe Physical-Technical Institute, RAS, St. Petersburg. Distant Education in Physics based on the educational program of the Ioffe Institute Center of Research and Education, in Russian.