Fyodor Yu. SOLDATENKOV
A.F. Ioffe Physico-Technical Institute,
26 Politekhnicheskaya Street,
St.-Petersburg, Russia, 194021
Phone (work): +7 (812) 247-93-53
Fax: +7 (812) 247-10-17
Email: F.Soldatenkov@mail.ioffe.ru
Download resume in the MWord format
Degree:
Ph.D. in Physics, July 2001
A.F. Ioffe Physico-Technical Institute of Russian Academy of Science.
GPA 5.0/5.0
Thesis: "Subnanosecond switches based on the GaAs(InGaAs)-AlGaAs heterojunction systems (the development of technology and properties investigation)".
Education:
St. Petersburg Electrical Engineering University, Russia.
(1986-1992), GPA 4.6/5.0
M. Sc. in Physics, February 1992
Diploma: "Growth of pure, undoped GaAs layers and
manufacturing of thermosensors based on them".
Skills:
Liquid-Phase Epitaxy (LPE)
apparatus assembling, maintenance, operation.
design of auxiliary equipment.
Manufacturing, testing and processing of semiconductor structures and devices based on them.
Semiconductor devices design.
Training and supervising students and
technicians (in Russia, USA and China).
Working knowledge of Microsoft Windows 98/2000, DOS,
WinWord, MATLAB, Mathcad, Origin and AutoCAD.
Web-design (http://www.ioffe.ru/Optothyristor/)
Languages:
English, Spanish, Russian.
Work experience:
1995 - present
Head of the technology group.
A.F. Ioffe Physico-Technical Institute of Russian Academy of Sciences.
Laboratory of Optoelectronic Phenomena in Heterostructures.
(http://www.ioffe.ru/Optothyristor/)
Locate potential customers and negotiate agreements with them.
Determine directions of the future research of the group.
Interface with suppliers to provide the group with necessary materials and equipment.
Train the staff.
Supervise technology implementation.
1998 - present
Contractor - Consultant.
The Hebei Semiconductor Research Institute (China).
Set up of advanced technology of manufacturing, producing and testing of opto-thyristor devices at the institute and training its staff
(see - http://www.ioffe.ru/Optothyristor/lab/products.html).
June-July 2002 - visiting scientist in Hebei Semiconductor Research Institute (China).
1998 - present
Research Engineer, Contractor - Consultant.
Megaimpulse Ltd, at A.F. Ioffe Physico-Technical Institute (Russia).
New methods development of semiconductor device manufacturing and its application to opto-thyristor technology and processing control.
1994 - 1998
Research Engineer.
FTI - Optronic Ltd, at A.F. Ioffe Physico-Technical Institute (Russia).
(http://www.fti-optronic.com/)
Developed new methods of semiconductor device manufacturing and applied them to opto-thyristor technology and processing control.
1994 - 1998
Consultant.
Power Spectra Inc. (USA).
Transferred advanced technology of manufacturing, producing and testing of opto-thyristor devices to the company and trained its staff.
October-December 1995 - visiting scientist in "Power Spectra Inc.", Sunnyvale, CA.
1992 - 1994
Engineer.
Technoexan Ltd, at A.F. Ioffe Physico-Technical Institute (Russia).
(http://www.technoexan.ru/)
Manufacturing opto-thyristor devices.
1992 - 1995
Researcher.
A.F. Ioffe Physico-Technical Institute of Russian Academy of Sciences.
Laboratory of Optoelectronic Phenomena in Heterostructures.
Investigation of GaAs, InGaAs, AlGaAs structures and devices on their basis.
Design and manufacturing of novel semiconductor devices.
1986 - 1988
Programmer. Teaching assistant.
St. Petersburg Electrical Engineering University (Russia) (in that time - Leningrad Electrotechnical Institute).
Co-author of a lab manual for students (on optics and on the Faraday effect).
Designed crystal-optical elements for lasers.
Awards:
1) Paper of acknowledgment of Russian Academy of Sciences for the fruitful work in the Academy, 1999.
2) St. Petersburg Electrical Engineering University, Russia.
Honorary Stipend (Analog of Dean's List), 1987-1992.
3) The Leningrad Physics Olympiad prize winner, 1986.
Publications and presentations
18 publications and presentations. Some of them:
1. V.P.Ulin, M.V.Zamoryanskaya, F.Yu.Soldatenkov and S.G.Konnikov. "Cathodoluminescence of the composite nanoscale dendrite-like GaAs-Ge epitaxial heterostructure". Solid State Phenomena, 2001, v. 78-79, p. 301-6.
2. L.S.Berman, V.G.Danil`chenko, V.I.Korol`kov, F.Yu.Soldatenkov. "Deep level centers in undoped p-type GaAs layers grown by liquid phase epitaxy". Semiconductors, 2000, v. 34, 5, p. 541-4.
3. F.Yu.Soldatenkov, V.P.Ulin, A.A.Yakovenko, O.M.Fedorova, S.G.Konnikov, V.I.Korol`kov. "Unstrained epitaxial InxGa1-xAs films obtained on porous GaAs". Technical Physics Letters, 1999, v. 25, 11, p. 855-7.
4. V.I.Korolkov, N.Yu.Orlov, A.V.Rozhkov, F.Yu.Soldatenkov and M.N.Stepanova. "Current and time dependence of the residual voltage in the conducting state of photon-injection pulsed commutator switches". Semiconductors, 1995, v. 29 (3), p. 203-5.
5. V.V.Zhuravleva, V.I.Korolkov, N.Yu.Orlov, A.V.Rozhkov and F.Yu.Soldatenkov. "Series connection of photon-injection pulsed switches driven by bias current and their dU/dt switching". Instruments and Experimental Techniques, 1995, v. 38, iss. 4, pt. 1, p. 466-9.
1. F.Yu.Soldatenkov, V.P.Ulin, M.V.Zamoryanskaya, T.B.Popova, S.G.Konnikov. "New type of the nonplanar nanosize epitaxial heterostructures on the base of porous A3B5 monocrystals". Proc. of the International conference on the optoelectronics, St. Petersburg (Russia), 2003, p.67-9.
2. V.P.Ulin, M.V.Zamoryanskaya, F.Yu.Soldatenkov, T.B.Popova, S.G.Konnikov. "GaAs-Ge non-planar composite epitaxial heterostructures: LPE growth and cathodoluminescence investigations". Proc. of the 2001 International Semiconductor Device Research Symposium, Washington, USA, 2001, pp. 301-4.
3. E.N.Mel`chakov, P.A.Rodnyi, A.V.Rozhkov, and F.Yu.Soldatenkov. "Small-size source of subnanosecond X-ray pulses". Proc. of the 12-th International Conf. on High-Power Particle Beams, BEAMS`98, Haifa, Israel, 1998, p. 242.
4. F.Yu.Soldatenkov. "Undoped GaAs layers grown by Liquid Phase Epitaxy in the argon atmosphere", Proc. of the OPTO-25 conference, 1998, St. Petersburg (Russia), 1998, p.51-2.
5. V.I.Korol`kov, A.V.Rozhkov, F.Yu.Soldatenkov and K.V.Yevstigneev (September 1998). "Investigation of temperature switching stability of AlGaAs/GaAs - based high-voltage superfast switches". Proc. of the Fourth International seminar on power semiconductor, ISPS 98, Prague (Chech Republic), 1998, p.163-8.
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Alexander Kuznetsov
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Fyodor Soldatenkov
