AlGaAs - Aluminium Gallium Arsenide

Transport properties of electron and hole two-dimensional gas in high electric field

Experimental field dependences dependences of electron velocity. T=77 K.
1 - for bulk GaAs with no=1015 cm-3
2, 3 - for two-dimensional modulation - doped heterostructures AlxGa1-xAs/GaAs.
2 - x=0.3;
3 - x=0.5.
(Masselink (1989)).
Experimental field dependences dependences of electron velocity. T=300 K.
1 - for bulk GaAs with no=1015 cm-3
2, 3 - for two-dimensional modulation - doped heterostructures AlxGa1-xAs/GaAs.
2 - x=0.3;
3 - x=0.5.
(Masselink (1989)).
Experimental field dependences of hole velocity for two-dimensional hole gas. Single heterointerface samples. x=0.5. T=77 K.
1 - p=3.3·1011 cm-2, µ=3300 cm2 Vs
2 - p=4.2·1011 cm-2, µ=4000 cm2 Vs
(Masselink et al. (1987)).