AlGaAs - Aluminium Gallium Arsenide

Impact Ionization

Fits to experimental values of electron and hole ionization coefficients for AlxGa1-xAs with x=0.1÷0.4. T=300 K.
Experimental points are shown only for x=0.1
(Robbins et al. (1988)).

Parametrizations of the electron and hole ionization coefficients. T=300 K.
(Robbins et al.(1988))

For electrons:
      
x αo (cm-1) Fno (V cm-1) m
0.1 1.81·105 6.31·105 2.0
0.2 1.09·106 1.37·106 1.3
0.3 2.21·105 7.64·105 2.0
0.4 1.74·107 3.39·106 1.0
For holes:
      
x βo (cm-1) Fpo (V cm-1) m
0.1 3.05·105 7.22·105 1.9
0.2 6.45·105 1.11·106 1.5
0.3 2.791·105 8.47·105 1.9
0.4 3.06·106 2.07·106 1.2

Experimental ionization coefficients versus x for electric fields
Bottom curves - 3·105 V/cm
Upper curves - 4·105 V/cm
T=300 K. (Robbins et al. (1988)).

Breakdown voltage and breakdown field of n-GaAs/p-Al0.3Ga0.7As heterojunctions T=300 K.
(Hur et al. (1990))

Na=1014 cm-3 Vi=2.8 kV Ei=2.8·105 V cm-1
Na=1016 cm-3 Vi=70 V Ei=4.5·105 V cm-1