AlGaAs - Aluminium Gallium Arsenide

Recombination Parameter

Ambipolar diffusion length at a carrier density of 1017÷1018 cm-3 versus x. T= 300K.
Determination was accomplished by catodoluminescene technique
(Zarem et al. (1989)).
Carrier lifetimes at carrier density of ~3·1018 cm-3 (high injection level) versus versus x. T= 300K.
Determination was accomplished by photoluminiscence decay signal technique.
(Zarem et al. (1989)).
Hole lifetime versus x for n-AlxGa1-xAs
Nd-Na~1015÷1016 cm-3. T= 300K.
(Timmons et al. (1988)).

Radiative recombination coefficient at 300K ~1.8·10-10 cm3/s

Auger coefficient at T=300 K (Timmons (1985)).

x Cn (cm6/s) Cp (cm6/s)
0 1.9·10-31 12·10-31
0.1 1.2·10-31 8.5·10-31
0.2 0.7·10-31 6.1·10-31
Cn ( for n - doped samples)
Cp ( for p - doped samples)

Surface and interface recombination velocities in GaAs and AlxGax-1As
(Pavesi and Guzzi (1994)).

x S (cm/s)  
0 4·105 free surface
0 45 interface between GaAs/Al0.3Ga0.7As
0 450±100 interface between GaAs/Al0.5Ga0.5As p-type
0.08 4·105 free surface
0.08÷0.18 ~3·104 interface between AlxGa1-xAs/Al0.88Ga0.22As undoped
0.28 4200 interface between AlxGa1-xAs/Al0.5Ga0.5As undoped