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| Breakdown field | 1.2 ÷ 1.8 x 106 V cm-1 | 300 K |
| Mobility electrons | 300 cm2 V-1 s-1 | 300 K |
| Mobility holes | 14 cm2 V-1 s-1 | 300 K |
| Diffusion coefficient electrons | 7 cm2 s-1 | 300 K |
| Diffusion coefficient holes | 0.3 cm2 s-1 | 300 K |
| Electron thermal velocity | 1.85 x 105 m s-1 | 300 K |
| Hole thermal velocity | 0.41 x 105 m s-1 | 300 K |
| Conductivity σ | 10-3 ÷ 10-5 Ω-1 cm-1 | 290 K ; doped (Al2OC) single p-type crystals (blue) |
Edwards et al. (1965) |
| 10-11 ÷ 10-13 Ω-1 cm-1 | 300 K ; undoped single crystals (colorless or pale yellow) see also Conductivity vs. reciprocal temperature. |
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| Electron drift mobility μn | ~= 300 cm2 V-1 s-1 | 300 K ; calculated | Chin et al. (1994) |
| Phonon-limited electron drift mobility μn | ~= 2000 cm2 V-1 s-1 | 77 K ; calculated for very weak doped AlN | |
| Mobility holes μp | 14 cm2 V-1 s-1 | 290 K ; doped single crystal, the authors point out that this result must be viewed with some caution |
Edwards et al. (1965) |
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