BN - Boron Nitride

Electrical properties

Basic Parameters

Basic Parameters for Zinc Blende crystal structure
Basic Parameters for Hexagonal crystal structure

Basic Parameters for Zinc Blende crystal structure

Breakdown field (2÷6)x 106 V cm-1 300 K Brozek et al. (1994).
Mobility electrons, µn =< 200 cm2 V-1 s-1 300 K,
for Nd = 6 x 1016 cm-3		 Waters et al. (1995).
Mobility holes, µp =< 500 cm2 V-1 s-1 300 K,
carrier concentration p = 5 x 1018 cm-3		 Litvinov et al. (1998) .
Diffusion coefficient electrons =<5 cm2 s-1 300 K
Diffusion coefficient holes =<12 cm2 s-1 300 K
The majority of papers published are devoted to zinc blende modification: Bam et al. (1976), Mishima et al. (1987), Bar-Yam et al. (1992), Taniguchi et al. (1993), Lu et al. (1996), Litvinov et al. (1998) .
Unintentionally doped BN films are p-type with carrier concentrations in the high 1016 to low 1017 cm-3 levels. It had been suggested that the unintentional dopants are nitrogen vacancies [Bar-Yam et al. (1992)].

Basic Parameters for for Hexagonal crystal structure

      
Breakdown field (1÷3)x 106 V cm-1 300 K Lopatin (1994)
BN, hexagonal. Resistivity vs. temperature above 700°C.
A: from bulk resistance of a disk measured in c direction.
B--E: literature data for comparison.
Carpenter & Kirby (1982)