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| Mobility | Remarks | Referens | |
| for n-type | mn ~= 200 cm2/V · s | Nd = 6 x 10 · 16 cm-3 | Waters (1995) |
| for p-type | mp ~= 500 cm2/V · s | room temperature for carrier concentration p =5x10·18cm-3 |
Litvinov et al. (1998) |
| electrical breakdown field: | (2...6) x 106 V/cm | Brozek et al. (1994) |
| carrier concentration and mobility: |
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| n m |
1015 cm-3 0.2 cm2/Vs |
500 K, polycrystalline material, type of carrier not determined |
Bam et al.(1976) |
| n m |
1014 cm-3 4 cm2/Vs |
900 K, mobility increases exponentially with rising temperature between 500 K and 900K |
Bam et al.(1976) |
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