| Infrared refractive index | 3.3 |
| Radiative recombination coefficient | 7·10-10 cm3/s |
Infrared refractive index
n = k1/2 = 3.255·(1 + 4.5·10-5T)Long-wave TO phonon energy
hνTO = 33.81·(1 - 5.5·10-5 T) (meV)Long-wave LO phonon energy
hνLO= 36.57·(1 - 4·10-5 T) (meV) |
Refractive index n versus photon energy for a high-purity GaAs.(no~5·1013 cm-3). Solid curve is deduced from two-beam reflectance measurements at 279 K. Dark circles are obtained from refraction measurements. Light circles are calculated from Kramers-Kronig analysis (Blakemore [1982]). |
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Normal incidence reflectivity versus photon energy. (Phillip and Ehrenreich [1963]). |
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Intrinsic absorption coefficient near the intrinsic absorption edge for different temperatures. (Sturge [1962]). |
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Intrinsic absorption edge at 297 K at different doping levels. n-type doping (Casey et al. [1975]). |
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Intrinsic absorption edge at 297 K at different doping levels. p-type doping (Casey et al. [1975]). |
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The absorption coefficient versus photon energy from intrinsic edge to 25 eV. (Casey et al. [1975]). |
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Free carrier absorption versus wavelength at different doping levels, 296 K (Spitzer and Whelan [1959]). Conduction electron concentrations are: 1. 1.3·1017cm-3; 2. 4.9·1017cm-3; 3. 1018cm-3; 4. 5.4·1018cm-3 |
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Free carrier absorption versus wavelength at different temperatures. no = 4.9·1017cm-3 (Spitzer and Whelan [1959]) Temperatures are: 1. 100 K; 2. 297 K; 3. 443 K. |
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