Electrical properties

Basic Parameters

Mobility and Hall Effect

	Electron Hall mobility versus x for four sets of samples. T=77 K. Electron concentration no≤5·1016 cm-3. (Biryulin et al.(1981)).
	Temperature dependence of electron Hall mobility for GaAs1-xSbx. Electron concentration no≤5·1016 cm-3. 1. x=0.07; 2. x=0.12. (Biryulin et al.(1981)).
	Temperature dependence of electron Hall mobility for GaSb. 1. Nd=1.7·1018 cm-3. 2. Nd=2.8·1017 cm-3. Broken curves represent the experimental data. Continuous curves represent theoretical calculations. (Mathur and Jain (1979)).
	Electron drift (solid curves) and Hall (dashed curves) mobilities versus electron concentration n0 for GaAs (x=0) for different degrees of compensation. T=77 K. (Nd+Na)/no: 1 - 1, 2 - 2, 3 - 5, 4 - 10. (Rode (1975)).
	Electron Hall mobility versus electron concentration no for GaSb (x=1). T=77 K. Open circles represent measurements with a group of samples having approximately the same residual acceptor concentrations Na. Full symbols:specimens with lower residual acceptor concentrations. Solid lines represent the theoretical calculations for different values of compensating acceptor densities - either singly (Na-) or doubly (Na--) ionized. 1. Na- = 1.2·1017 or Na-- = 0.4·1017cm-3 2. Na- =2.85·1017 or Na-- =0.95·1017cm-3 3. Na- = 4.5·1017 or Na-- = 1.5·1017cm-3 (Baxter et al. (1967)).
	Temperature dependence of hole Hall mobility for three high-purity GaAs (x=0) samples. (Wiley (1975)).
	Temperature dependence of hole Hall mobility for two GaSb (x=1) samples. MBE technique. Hole concentration at 300K: 1. - 2.28·1016 cm-3; 2. - 1.9·1019 cm-3. (Johnson et al. (1988)).
	Hole Hall mobility versus hole concentration po for GaAs (x=0). T=300 K. (Wiley (1975)).
	Hole Hall mobility versus hole concentration po for GaSb (x=1). T=300 K. Experimental data are taken from five different papers. (Wiley (1975)).

Impact Ionization

	The dependences of ionization rates for electrons αi and holes βi versus 1/F. 1 - 4 - x = 0.10, 5,6 - x = 0.125, 1, 3, 5 show α(1/F); 2, 4, 6 show β(1/F); Temperature T(K): 1 ,2, 5, 6 - 300, 3, 4- 77. (AndreewLook et al. (1981)).
	The dependences of αi and βi versus 1/F for GaSb (x=1). T=77 K Open symbols : F(111). Filled symbols : F(100). (Zhingarev et al. (1981)).
	The dependences of αi and βi versus 1/F for GaSb (x=1). T=300 K F (100). (Hildebrand et al. (1980)).