Thermal properties

	Temperature dependence of thermal conductivity for x=0 (GaAs) n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018; p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019. (Carlson et al. (1965)).
	Temperature dependence of thermal conductivityfor x=1 (GaSb). Electron concentration at 300 K n-type sample, no (cm-3): 1. 1.6·1017; 2. 8.6·1017; 3. 1.8·1018; p-type sample. 4. Undoped GaSb po = 1.42·1017(cm-3) (Poujade and Albany (1969)). For 300< T < 800 K K=0.32(T/300)-1.6 (W/cmK)
	Temperature dependence of specific heat at constant pressure. 1. - x=0 (GaAs), 2. - x=1 (GaSb). (Piesbergen (1963)).
	Lattice constant as a function x (Lendvay (1984)).
	Temperature dependence of linear expansion coefficient for x=0 (GaAs) (Novikova (1961)).
	Temperature dependence of linear expansion coefficient x=1 (GaSb) (Novikova and Abrikosov (1963)).
	Pseudobinary phase diagram for GaAs1-xSbx system. (Gratton and Woolley (1980)).