
Basic
Parameters at 300 K
Band
structure and carrier concentration
Basic
Parameters
Band
Structure
Intrinsic
carrier concentration
Lasing
wavelength
Effective
Density of States in the Conduction and Valence Band
Temperature
Dependences
Dependence
on Hydrostatic Pressure
Band
Discontinuities at Heterointerfaces
Effective
Masses and Density of States
Donors
and Acceptors
Electrical
Properties
Basic
Parameters of Electrical Properties
Mobility
and Hall Effect
Transport
Properties in High Electric Fields
Impact
Ionization
Recombination
Parameters
Optical
properties
Thermal
properties
Basic
parameters
Thermal
conductivity
Lattice
properties
Mechanical
properties
Basic
Parameters
Elastic
Constants
Micro
Hardness
Acoustic
Wave Speeds
Phonon
Frequencies
Piezoelectric,
Thermoelectic and Magnetic Properties
References