Remarks | Referens | ||
Dielectric constant (static) | 12.5 +1.44y | Ga0.47In0.53AsyP1-y; 300 K | |
Dielectric constant (high frequency) | 9.61 +2.0y | Ga0.47In0.53AsyP1-y; 300 K | |
Infrared refractive index | ~=3.1+0.46y | 300 K | Goldberg Yu.A. & N.M. Schmidt (1999) |
Radiative recombination coefficient | 1.2 x 10-10 cm3 s-1 1.1 x 10-10 cm3 s-1 |
Ga0.47In0.53As0.24P0.76; y=0.24;
300 K Ga0.47In0.53As0.6P0.4; y=0.6; 300 K |
|
Optical phonon energy | ### meV | 300 K |
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Refractive index n versus wavelength for different composition alloys lattice-matched to InP. 300 K 1. y=1, 2. y=0.7, 3. y=0.61 4. y=0.54, 5. y=0 (Burkhard et al. (1982)). |
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Refractive index n versus photon energy for different composition alloys lattice-matched to InP. 300 K. 1. y=1 2. y=0.55 3. y=0 (Kelso et al. (1983)). |
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Refractive index n for composition alloys lattice-matched to InP versus composition parameter y
at wavelength λ=1.55 µm. Symbols represent the experimental and calculated data from several papers. (Amiotti and Landgren (1993)). |
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The absorption coefficient versus energy difference E-Eg for different composition alloys lattice-matched to InP. 300 K. 1. y=1, (Eg=0.75 eV) 2. 0.54<y<0.7 3. y=0, (Eg=1.35 eV) (Burkhard et al. (1982)). |
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The absorption coefficient near the intrinsic absorption edge for Ga0.28In0.72As0.6P0.4 (Ge doped, composition alloy lattice-matched to InP) versus photon energy at different doping level N, 80 K N (cm-3): 1. 2·1016, 2. 3.5·1017, 3. 9.8·1017, 4. 2.4·1018. (Rajalakshmi and Arora (1990)). |
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Absorption coefficient versus photon energy for different composition alloys lattice-matched to InP. 300 K. 1. y=0.24, 2. y=1. (Adachi (1989)). |