| Remarks | Referens | ||
| Bulk modulus | (7.1-0.516y+0.02y2)·1011 dyn cm-2 | Ga0.47In0.53AsyP1-y; 300K | Goldberg Yu.A. & N.M. Schmidt (1999) |
| Debye temperature | (425-103y) K | Ga0.47In0.53AsyP1-y; 300K | |
| Density | (4.81+0.552y+0.138y2) g cm-3 | Ga0.47In0.53AsyP1-y; 300K | |
| Melting point, Tm | ~= 1100° C | ||
| Specific heat | (0.31 +0038y -0.008y2) J g-1°C -1 | Ga0.47In0.53AsyP1-y; 300K | |
| Thermal conductivity | (0.68-1.77y+1.25y2) W cm-1 °C
-1 |
Ga0.47In0.53AsyP1-y; 300K | |
| Thermal expansion coefficient, linear | (4.6+1.06y)x10-6 °C -1 | Ga0.47In0.53AsyP1-y; 300K |
 |
GaxIn1-xAsyP1-y. Thermal
resistivity vs. composition parameter y for GaxIn1-xAsyP1-y
lattice-matched to InP 300K The solid and dashed lines are the results calculated according to two different models Adachi (1992) |
 |
GaxIn1-xAsyP1-y. Specific
heat at constant pressure vs. temperature for different GaxIn1-xAsyP1-y
alloys. 1 - x=y=0.2; 2 - x=y=0.4; 3 - x=y=0.8. Sirota et al. (1982) |
 |
GaxIn1-xAsyP1-y. Debye
temperature vs. temperature for different GaxIn1-xAsyP1-y
alloys. 1 - x=y=0.2; 2 - x=y=0.4; 3 - x=y=0.6; 4 - x=y=0.8. Sirota et al. (1982) |
 |
GaxIn1-xAsyP1-y. Thermal
expansion coefficients vs. y-composition parameter for GaxIn1-xAsyP1-y
lattice-matched to GaAs (curve 1); ZnSe (curve 2); and InP (curve 3) Adachi (1982,b) |
| Remarks | Referens | ||
| Lattice constant, a | 5.4505 (GaP) ÷ 6.0583 (InAs) | 300K | |
| a~= 5.8688-0.4176x+0.1896y+0.0125xy A | Adachi (1982) | ||
| compositions lattice-matched to InP | a~= 5.8687 A | x~=0.1894y/(0.4184-0.013y) ~= 0.47y | |
| compositions lattice-matched to GaAS | a~= 5.65325 A | x~=(1+y)/2.08 | |
| compositions lattice-matched to ZnSe | a~= 5.6676 A | x~=(1.06+y)/2.06 |
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