Remarks | Referens | ||
Dielectric constant (static) | 15.3+0.4x | 300 K; compositions lattice-matched to GaSb. |
Mikhailova M.P. (1999) |
15.15+0.35x | 300 K; compositions lattice-matched to InAs.. |
||
Dielectric constant (high frequency) | 12.6+1.8x | 300 K; compositions lattice-matched to GaSb. |
|
12.3+1.8x | 300 K; compositions lattice-matched to InAs. |
||
Infrared refractive index | ~=3.51+0.25y | 300 K; compositions lattice-matched to InAs. see aso Refractive index n vs. photon energy |
|
Radiative recombination coefficient | ~ 10-10 cm3 s-1 | 300 K | |
Optical phonon energy | ~= 0.03 meV | 300 K |
![]() |
Refractive index n versus photon energy for different composition alloys lattice-matched to GaSb. (Adachi (1987)). |
![]() |
Refractive index n versus photon energy for different composition alloys lattice-matched to InAs. (Adachi (1987)). |
![]() |
The absorption coefficient versus energy 300 K. 1. x=1, y=1 (GaSb) 1. x=0, y=1 (InAs) (Adachi (1989)). |