1,1'- wurtzite GaN;
2,2'- zinc blende GaN
Oguzman et al. (1997)
Fi (300 K) ~= (1-2) x 106 V/cm.
Vi (300 K) ~= 42 V
Osinsky et al. (1998)
|
GaN. Calculated impact ionization rates as a function of inverse electric
field for electrons (αi) and holes (βi-)
in wurtzite and zinc blende GaN. 300 K. 1,1'- wurtzite GaN; 2,2'- zinc blende GaN Oguzman et al. (1997) |
|
GaN, Wurtzite. Normalized breakdown electric field ( Fi
)and relative breakdown voltage (Vi) as a function of
temperature measured p+-p-n diodes. Fi (300 K) ~= (1-2) x 106 V/cm. Vi (300 K) ~= 42 V Osinsky et al. (1998) |
|
|