SiC - Silicon Carbide

Electrical properties

Basic Parameter

    Remarks Referens
Breakdown field   3C-SiC  ~= 106 V/cm 300 K Goldberg et al.(2001)
    4H-SiC  (3÷5) x 106 V/cm 300 K  
    6H-SiC (3÷5) x 106 V/cm 300 K  
Mobility electrons   3C-SiC  ≤800 cm2 V-1 s-1 300 K  
    4H-SiC  ≤900 cm2 V-1 s-1 300 K  
    6H-SiC ≤400 cm2 V-1 s-1 300 K  
Mobility holes   3C-SiC  ≤320 cm2 V-1 s-1 300 K  
    4H-SiC  ≤120 cm2 V-1 s-1 300 K  
    6H-SiC ≤ 90 cm2 V-1 s-1 300 K  
Diffusion coefficient electrons   3C-SiC  ≤20 cm2/s 300 K  
    4H-SiC  ≤22 cm2/s 300 K  
    6H-SiC ≤ 90 cm2/s 300 K  
Diffusion coefficient holes   3C-SiC  ≤ 8 cm2/s 300 K  
    4H-SiC  ≤ 3 cm2/s 300 K  
    6H-SiC ≤ 2 cm2/s 300 K  
Electron thermal velocity   3C-SiC  2.0 x 105 m/s 300 K  
    4H-SiC  1.9 x 105 m/s 300 K  
    6H-SiC 1.5 x 105 m/s 300 K  
Hole thermal velocity   3C-SiC  1.5 x 105 m/s 300 K  
    4H-SiC  1.2 x 105 m/s 300 K  
    6H-SiC 1.2 x 105 m/s 300 K  
Mobility electrons μn   3C-SiC  380 cm2 V-1 s-1 300 K Nishino et al. (1983)
  3C-SiC  900 cm2 V-1 s-1 300 K ; crystalline. Nelson et al. (1966)
Mobility holes μp   3C-SiC  15...21 cm2 V-1 s-1 300 K Nishino et al. (1983)

For conductivity, carrier concentration and hall mobility in epitaxial layers on Si, see Temperature dependence

Mobilities in other polytypes are of the same order of magnitude, see Electron and hole mobility vs. temperature

The thermal conductivity of 6H-SiC see also Electron mobility vs. temperature