Remarks | Referens | ||
Electron ionization rates | αi = α0 x exp(-Ei
/E), where α0 = 4.57 x 108 1/cm, Ei = 5.24 x 107 V/cm |
300 K | Kyuregyan & Yurkov (1989) |
Hole ionization rates | βi = β0 x exp(-Ei
/E), where β0 = 5.13 x 106 1/cm, Ei = 1.57 x 107 V/cm |
300 K | Kyuregyan & Yurkov (1989) |
βi = β0 x exp(-Epo/E)
where β0 = 6.3 x 106 -1.07 x 104 T (1/cm),
Epo = 1.8 x 107 (V/cm)
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3C-SiC. Calculated Hole ionization rates vs. inverse electric field. T = 300 K. Bellotti et al. (1999) |
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4H-SiC. Experimental Hole ionization rates vs. inverse electric field. T = 300 K. Raghunathan & Baliga (1999) |
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6H-SiC. Experimental Hole ionization rates vs. inverse electric field
at different temperatures:. T = 300 K; 340K; 380K; 400K; 450K. Raghunathan & Baliga (1999) |
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4H-SiC. Ionization rates for electrons & holes as a function of
inverse electric field. T = 300 K. Konstantinov et al. (1997) |
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6H-SiC. Electron (lines l'-5') and Hole (lines 1-5) ionization
rates vs. inverse electric field at different temperatures. 1 - 1': T = 294 K; 2 - 2': T = 373 K; 3 - 3': T = 473 K; 4 - 4': T = 573 K; 5 - 5': T = 673 K. Konstantinov et al. (1989) |
Remarks | Referens | |||
Temperature coefficient of the breakdown voltage : |
4H-SiC | b=1/V (dV/dT) = 2.6 x 10-4 K-1 | 300-573 K; Vbr~270-290 V; asymmetrical p+-n SiC structures |
Vasilevskii et al. (2000) |
4H-SiC | b=1/V (dV/dT) = (8-10) x 10-5 K-1 | 300-573 K; Vbr~22 V; symmetrical p+-n+ SiC structures |
Vasilevskii et al. (2003) |
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4H-SiC. Dependences of the breakdown voltage & breakdown field
vs. doping level abrupt p+-n functions T = 300 K. Konstantinov et al. (1997) |
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4H-SiC. Normalized Breakdown voltage vs. temperature for uniform
breakdown of abrupt p+-n. T = 300 K. Breakdown voltage : 1- 452 V; 2 - 452 V. Konstantinov et al. (1998) |
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6H-SiC. Dependence of the breakdown voltage abrupt p+-n. T = 300 K; Kyuregyan & Yurkov (1989) |
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6H-SiC. Hole ionization rates vs. inverse electric field at two
temperatures for defective and defective free materials. T = 300 K; 450K. Raghunathan & Baliga (1999) |
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6H-SiC. Normalized breakdown voltage vs. temperature. E||c Konstantinov et al. (1998) |
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6H-SiC. Breakdown voltage temperature coefficient β = (d/dT)(ln
Vi) vs. temperature. E||c Anikin et al. (1988) |
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6H-SiC. Temperature coefficient of breakdown voltage vs. temperature. asymmetrical p+-n; Vbr~ 80 V Vassilevski et al. (1993) |