NSM Archive - Silicon Carbide (SiC)

Optical properties

			Remarks	Referens
Dielectric constant (static)	3C-SiC	ε₀ ~= 9.72	300 K	Patric & Choyke (1970)
Dielectric constant (static)	4H-SiC	The value of 6H-SiC dielectric constant is usually used	300 K
Dielectric constant (static, ordinary direction)	6H-SiC	ε_0,ort ~= 9.66	300 K	Patric & Choyke (1970)
Dielectric constant (static, extraordinary direction)	6H-SiC	ε_{0, \|\|} ~= 10.03	300 K	Patric & Choyke (1970)
Ratio between the static dielectric constant (ordinary and extraordinary direction)	6H-SiC	ε_0,ort / ε_{0, \|\|} ~= 0.9631	300 K
Dielectric constant (high frequency)	3C-SiC	6.52	300 K	Patric & Choyke (1970)
Dielectric constant (high frequency)	4H-SiC	The value of 6H-SiC dielectric constant is usually used	300 K
Dielectric constant (high frequency, ordinary direction)	6H-SiC	ε_ort ~= 6.52	300 K	Patric & Choyke (1970)
Dielectric constant (high frequency, extraordinary direction)	6H-SiC	ε_\|\| ~= 6.70	300 K	Patric & Choyke (1970)

Infrared refractive index	3C-SiC	~=2.55	300 K	Goldberg et al.(2001)
	4H-SiC	~=2.55 (c axis) ~=2.59 ( \|\|c axis)	300 K	Goldberg et al.(2001)
	6H-SiC	~=2.55 (c axis) ~=2.59 ( \|\|c axis)	300 K	Goldberg et al.(2001)

Refractive index n(λ)	3C-SiC	n(λ)~= 2.55378 + 3.417 x 10⁴·λ^-2	300K, 467nm < λ< 691nm	Shaffer & Naum (1969)
	4H-SiC	n₀(λ)~= 2.5610 + 3.4 x 10⁴·λ^-2 n_e(λ)~= 2.6041 + 3.75 x 10⁴·λ^-2	300K, 467nm < λ< 691nm	Shaffer & Naum (1971)
	6H-SiC	n₀(λ)~= 2.55531 + 3.34 x 10⁴·λ^-2 n_e(λ)~= 2.5852 + 3.68 x 10⁴·λ^-2	300K, 467nm < λ< 691nm	Shaffer & Naum (1971)
			also see Refractive index n vs. wavelength and photon energy	Shaffer & Naum (1971)

Radiative recombination coefficient	4H-SiC	1.5 x 10^-12 cm³ s^-1	300 K, estimate	Goldberg et al.(2001)
Optical photon energy	3C-SiC	102.8 meV	300 K	Goldberg et al.(2001)
	4H-SiC	104.2 meV
	6H-SiC	104.2 meV

	3C-SiC. Phonon dispersion relations Derived from an eight-parameter bond-bending force model [Kushawa (1982)]. Circles experimental. [Kushawa (1982)].
	3C-SiC. Phonon dispersion relations Derived from a real-space formalism based on scattering theory. Circles experimental. Lee & Joannopoulos (1982)
	4H-SiC, 6H-SiC, 15R-SiC, 21R-SiC. Phonon dispersion relationsvs. reduced wavevector. Along the axial direction Feldman et al. (1982)

phonon wavenumbers:			Remarks	Referens
3C-SiC	νTO(Γ)	796.2(3) cm^-1	T=300K, Raman spectroscopy	Olego et al. (1982a)
	νTO(Γ)	783-796 cm^-1	T=300K	Karch et al. (1994), Nakashima & Tahara (1989), Feidman et al. (1968), Olego & Cardona (1982)
	νLO(Γ)	972.2(3) cm^-1	T=300K, Raman spectroscopy	Olego et al. (1982a)
	νLO(Γ)	829 cm^-1	T=300K	Karch et al. (1994), Nakashima & Tahara (1989), Feidman et al. (1968), Olego & Cardona (1982)
	νTA(L)	266 cm^-1	T=300K	Olego et al. (1982b), Karch et al. (1994), Nakashima & Tahara (1989), Feidman et al. (1968), Olego & Cardona (1982)
	νTA(L)	261-266 cm^-1
	νLA(L)	610 cm^-1
	νTO(L)	765-766 cm^-1
	νLO(L)	837-838 cm^-1
	νTA(X)	366-373 cm^-1
	νLA(X)	629-640 cm^-1
	νTO(X)	755-761 cm^-1
	νLO(X)	829 cm^-1

main phonon energies:			Remarks	Referens
4H-SiC	TA₁	46.7 meV		Freitas (1995)
	TA₂	51.4 meV 53.4 meV
	LA	76.9 meV 78.8 meV
	TO₁	95.0 meV
	LO	104.0 meV 104.3 meV

6H-SiC	TA	36.3 meV	discussion of free exciton replica in wavelength modulated absorption	Humphreys (1981)
	TA₁	46.3 meV		Humphreys (1981) , Freitas (1995)
	TA₂	53.5 meV
	LA	53.3 meV		Humphreys et al. (1981)
	LA	77.0 meV		Humphreys et al. (1981), Freitas (1995)
	TO₁	94.7 meV		Freitas (1995)
	TO₂	95.6 meV		Humphreys et al. (1981), Freitas (1995)
	LO	104.2 meV		Humphreys et al. (1981), Freitas (1995)
	LO	104.7 meV		Humphreys et al. (1981)

	3C-SiC. Refractive index n vs. wavelength. 300 K n(λ)~= 2.55378 + 3.417 x 10⁴·λ^-2 Shaffer et al. (1971)
	2H-SiC, 4H-SiC, 6H-SiC, 15R-SiC. Refractive index vs. wavelength. Powell (1972)
	4H-SiC. Refractive index n vs. wavelength. 300 K 1 - directions c axis (n₀(λ)); 2 - directions \|\|c axis (n_e(λ)). n₀(λ)~= 2.5610 + 3.4 x 10⁴·λ^-2 n_e(λ)~= 2.6041 + 3.75 x 10⁴·λ^-2 Shaffer et al. (1971)
	6H-SiC. Refractive index n vs. wavelength. 300 K 1 - directions c axis (n₀(λ)); 2 - directions \|\|c axis (n_e(λ)). n₀(λ)~= 2.55531 + 3.34 x 10⁴·λ^-2 n_e(λ)~= 2.5852 + 3.68 x 10⁴·λ^-2 Shaffer et al. (1971)
	4H-SiC, 6H-SiC. Birefringence (n_e - n₀) vs. wavelength. 300 K Shaffer et al. (1971)
	3C-SiC. Reflectance R vs. photon energy. 300 K 1 - Logothetidis and Petalas (1996); 2 - Lambrecht et al. (1994)
	4H-SiC. Reflectance R vs. photon energy. 300 K Lambrecht et al. (1993)
	6H-SiC. Reflectance R vs. photon energy. 300 K 1 - Logothetidis and Petalas (1996); 2 - Lambrecht et al. (1994)
	6H-SiC. Reflectance R vs. wavelength. 300 K c axis Spitzer et al. (1959)
	6H-SiC. Reflectance R vs. wavelength. 300 K \|\| c axis Spitzer et al. (1959)

	3C-SiC, 4H-SiC, 6H-SiC. The absorption coefficient α^1/2 vs. photon energy. T=4.2 K T=4.2 K Light-polarized E c axis Choyke (1969)
	3C-SiC. The absorption coefficient vs. photon energy for different electron concentrations T=300 K 1 - N_d = 5 x 10¹⁶ cm^-3 ; 2 - N_d = 7 x 10¹⁶ cm^-3 . Solid lines: α = (hν)² ; Experimental points - Solangi & Chaudhry (1992)
	3C-SiC. The absorption coefficient vs. photon energy for different electron concentrations T=300 K 1 - relatively pure crystal; 2 - N_d = 10¹⁹ cm^-3 Patrick & Choyke (1969)
	4H-SiC. The absorption coefficient vs. photon energy for different electron concentrations T=300 K Low-doped samples. E c axis. Sridhara et al. (1998)
	6H-SiC. The absorption coefficient vs. photon energy at different temperatures. 1 - T = 293 K (20°C); 2 - T = 573 K (300°C); 3 - T = 873 K (600°C); 4 - T = 1173 K (900°C); 5 - T = 1473 K (1200°C); 6 - T = 1773 K (1500°C). Groth & Kauer (1961)
	6H-SiC. The absorption coefficient vs. photon energy. T = 300 K Philipp & Taft (1960)
	6H-SiC. The absorption coefficient vs. photon energy. T = 300 K Philipp & Taft (1960)
	6H-SiC. The absorption coefficient vs. photon energy. T = 300 K c axis and \|\| c axis. N_d - N_{a ~}= 3.4 x 10¹⁸ cm^-3 Radovanova (1973)
	6H-SiC. The absorption coefficient vs. photon energy at different temperatures \|\| c axis, N_d - N_{a ~}= 2.0 x 10¹⁸ cm^-3. 1 - T = 78 K; 2 - T = 300 K; 3 - T = 390 K; 4 - T = 550 K; 5 - T = 810 K (1200°C); Dubrovskii et al. (1973)
	6H-SiC. The absorption coefficient vs. photon energy at different temperatures c axis, N_d - N_{a ~}= 1.0 x 10¹⁹ cm^-3. 1 - T = 80 K; 2 - T = 300 K; 3 - T = 450 K; 4 - T = 640 K; 5 - T = 930 K; 6 - T = 1100 K; Dubrovskii & Radovanova (1973)
	6H-SiC doped with B. The absorption coefficient vs. photon energy at different temperatures. 1 - T = 300 K; 2 - T = 400 K; 3 - T = 500 K; 4 - T = 600 K; 5 - T = 700 K; 6 - T = 800 K. Tairov & Tsvetkov (1988)

6H-SiC. The absorption coefficient vs. wavelength at different N_d - N_a values.
T = 300 K.

c axis
1 - N_d - N_a = 1.6 x 10¹⁸ cm^-3;
2 - N_d - N_a = 2.7 x 10¹⁸ cm^-3;
3 - N_d - N_a = 4.0 x 10¹⁸ cm^-3;
4 - N_d - N_a = 4.8 x 10¹⁸ cm^-3;
5 - N_d - N_a = 5.8 x 10¹⁸ cm^-3;
6 - N_d - N_a = 6.3 x 10¹⁸ cm^-3;
7 - N_d - N_a = 1.3 x 10¹⁹ cm^-3;
8 - N_d - N_a = 1.6 x 10¹⁹ cm^-3;
9 - N_d - N_a = 2.6 x 10¹⁹ cm^-3;
10- N_d - N_a = 3.3 x 10¹⁹ cm^-3;
11- N_d - N_a = 4.0 x 10¹⁹ cm^-3;
Radovanova (1973)

	4H-SiC. The infrared absorption coefficient vs. wavelength. 1 - T = 80 K; 2 - T = 300 K. E c axis. N_d - N_a = 10¹⁷ cm^-3 Radovanova (1973)
	4H-SiC. The infrared absorption coefficient vs. wavelength. 1 - T = 80 K; 2 - T = 300 K. E c axis. N_d - N_a = 10¹⁷ cm^-3 Dubrovskii & Radovanova (1971)
	4H-SiC. Free carrier absorption coefficient vs. wavelength c axis and \|\| c axis. T = 300 K. N_d - N_a = 3 x 10¹⁷ cm^-3 Radovanova (1973)
	6H-SiC. The absorption coefficient vs. temperature at different wavelength λ. 1 - λ = 1.49 µm; 2 - λ = 2.0 µm; 3 - λ = 2.25 µm; 4 - λ = 3.03 µm; 5 - λ = 3.52 µm; Groth & Kauer (1961)
	6H-SiC. The absorption coefficient α vs. wavelength at different temperature. 1 - α~λ^2.6; - T = 293 K (20°C); 2 - α~λ^2.2 - T = 673 K (400°C); 3 - α~λ^1.95 - T = 1273 K (1000°C) . Groth & Kauer (1961)