Thermal properties

• Basic parameters
• Thermal conductivity
• Lattice properties

Basic parameters

			Remarks	Referens
Bulk modulus	3C-SiC	2.5 x 1012 dyn cm-2	300 K	Goldberg et al.(2001)
	4H-SiC	2.2 x 1012 dyn cm-2
	6H-SiC	2.2 x 1012 dyn cm-2	theoretical estimation 0.97 x 1012 dyn cm-2 (experimental data)
Linear thermal expansion coefficient	3C-SiC	2.77 (42) x 10-6 K-1		Slack & Bartram (1975)
Debye temperature	3C-SiC	1200 K		Goldberg et al.(2001)
	4H-SiC	1300 K
	6H-SiC	1200 K
Melting point	3C-SiC	3103 (40) K	p = 35 bar. Peritectic decomposition temperature	Scace & Slack (1960)
	4H-SiC	3103 ± 40 K	at 35 atm	Tairov & Tsvetkov (1988)
	6H-SiC	3103 ± 40 K	at 35 atm. see also Phase diagram	Tairov & Tsvetkov (1988)
Specific heat	3C-SiC	The value of 6H-SiC is usually used		Goldberg et al.(2001)
	4H-SiC
	6H-SiC	0.69 J g-1°C -1
Thermal conductivity	3C-SiC	3.6 W cm-1 °C -1	300 K. see also Thermal conductivity vs. temperature	Goldberg et al.(2001)
	4H-SiC	3.7 W cm-1 °C -1
	6H-SiC	4.9 W cm-1 °C -1
		~= 611/(T-115) Wcm-1K-1	100 K < T < 2300 K	Nilsson et al. (1997)
Thermal diffusivity	3C-SiC	1.6 cm2 s-1		Goldberg et al.(2001)
	4H-SiC	1.7 cm2 s-1
	6H-SiC	2.2 cm2 s-1
		~= 146/(T-207) cm2 s-1	100 K < T < 2300 K	Nilsson et al. (1997)
Thermal expansion, linear	3C-SiC	α = 3.8 · 10-6 °C -1	300 K	Goldberg et al.(2001)
		α = 2.47 · 10-6 °C -1	3C-SiC, polycristal	Taylor & Jones (1960), Kern et al. (1969)
		α = 3.8 · 10-6 °C -1	500 K, 3C-SiC, single cristal
		α = 4.3 · 10-6 °C -1	600 K, 3C-SiC, single cristal
		α = 4.8 · 10-6 °C -1	900 K, 3C-SiC, single cristal
		α = 5.5 · 10-6 °C -1	1500-2100 K, 3C-SiC, single cristal
	6H-SiC	α = 1.2 · 10-6 °C -1	100 K	Taylor & Jones (1960), Kern et al. (1969)
		αa = 4.3 · 10-6 °C -1 (c axis) αc = 4.7 · 10-6 °C -1 ( ||c axis)	300 K

Thermal conductivity

	3C-SiC, 4H-SiC, 6H-SiC. Thermal conductivity vs. temperature at low temperatures. 1 - 4H-SiC; 2 - 3C-SiC; 3 - 6H-SiC. Harris (1995a)
	6H-SiC. Thermal conductivity (c-axis) vs. temperature for two different samples Slack (1964).
	3C-SiC, 4H-SiC, 6H-SiC. Thermal conductivity vs. temperature. 1 - 4H-SiC; 2 - 3C-SiC; 3 - 6H-SiC. Morelli et al. (1995a)
	6H-SiC. Thermal conductivity vs. temperature at different electron concentrations. 1 - very pure or highly compensated sample; 2 - n = 3.5 x 1016 cm-3; 3 - n = 2.5 x 1016 cm-3; 4 - n = 8.0 x 1017 cm-3; 5 - n = 2.0 x 1017 cm-3; 6 - n = 3.0 x 1018 cm-3; Morelli et al. (1993)
	6H-SiC. Thermal conductivity vs. temperature of different samples. 1 - n = 8.0 x 1015 cm-3 (n -type, 300 K); 2- n = 8.0 x 1015 cm-3 (n -type, 300 K); 3 - n = 1.0 x 1019 cm-3 (n -type, 300 K); 4 - p = 2.0 x 1016 cm-3 (p -type, 300 K); 5 - p = 5.0 x 1018 cm-3 (p -type, 300 K); 6 - p = 5.0 x 1019 cm-3 (p -type, 300 K); 7 - p ~= 1020 cm-3 (p -type, 300 K); Burgemeister et al. (1964).
	6H-SiC. Thermal conductivity vs. temperature at high temperatures. Solid line -                   K = 611/(T-115) (Wcm-1K-1) where T is temperature in degrees K Nilsson et al. (1997).

	6H-SiC, monocrystalline. The specific heat vs. temperature Nilsson et al. (1997).
	6H-SiC. The thermal diffusivity vs. temperature. Solid line -                   K = 146/(T-207) cm2 s-1 where T is temperature in degrees K Nilsson et al. (1997).
	3C-SiC. Linear thermal expansion of polycrystal 3C-SiC vs. temperature Kern et al. (1969)

	SiC. Phase diagram in Si-C the system. α is a solid solution of C in Si. &betta; is a solid solution of Si in C. Tairov & Tsvetkov (1988).
	SiC. Solubility of carbon (C) in silicon (Si). Marshall (1969).
	SiC, SiC2, Si2C. Partial pressures of the various species over SiC in SiC-Si system Tairov & Tsvetkov (1988).
	SiC, SiC2, Si2C. Partial pressures of the various species over SiC in SiC-C system Tairov & Tsvetkov (1988).

Lattice constant

	3C-SiC. Lattice constant vs. temperature. Taylor & Jones (1960)
	6H-SiC. Lattice constant vs. temperature. Taylor & Jones (1960)
	3C-SiC. Surface microhardness at elevated temperatures vs. temperature. Using Knoop's pyramid test Siegle et al. (1997),