| |
| Remarks | Referens | |||
| Electron ionization rates | Ge(x=1) (111) | αi = α0 x exp(-Ei
/E), where α0 = 2.72x106 1/cm, Ei = 1.1x106 V/cm |
(111), 300 K | Mikava et al. (1980) see also Ge. Impact Ionization |
| Ge(x=1) (100) | αi = α0 x exp(-Ei
/E), where α0 = 8.04x106 1/cm, Ei = 1.4x106 V/cm |
(100), 300 K | ||
| Hole ionization rates | Ge(x=1) (111) | βi = β0 x exp(-Ei
/E), where β0 = 1.72 x 106 1/cm, Ei = 9.37 x 105 V/cm |
(111), 300 K | Mikava et al. (1980) see also Ge. Impact Ionization |
| Ge(x=1) (100) | βi = β0 x exp(-Ei
/E), where β0 = 6.39 x 106 1/cm, Ei = 1.27 x 106 V/cm |
(100), 300 K |
| Remarks | Referens | |||
| Temperature coefficient of the breakdown voltage : | SiGe | b=1/V (dV/dT) = x 10-4 K-1 | Si1-xGex. No data |
| |