| Vladimir Osipov Senior Scientist, Ph.D Phone: +7(812)292 79 17 Publications
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Vladimir Osipov was born in 1964 and received the degree of Electrical Engineer (Honors E.E.) in the field of “Optoelectronics and Optoelectronic Devices” in 1987 from Leningrad Electro-Technical Institute (LETI), Faculty of Electronics, Department of Optoelectronics. He joined the Ioffe Institute, Russia in 1987 as researcher and received his PhD on the speciality “Semiconductor and Dielectric Physics” in 1994 from Ioffe Physical-Technical Institute. He was appointed as senior scientist in 1999. He was a visiting Associate Professor (2002) and JSPS Fellow in Tokyo Institute of Technology (2004–2005). His research interests include magnetic, electron spin resonance and optical properties of edge-localized states in nanographites, defects in diamonds, and some issues of nonlinear optics. He is an expert in preparation of multishell nanographites and use the electron spin resonance technique for detecting π-electronic oxygen-sensitive edge-localized spin states of nanographene having unconventional electronic properties. Together with his international collaborator he first found the new unique X-band ESR signatures of NV- defect and multivacancy in diamonds in the half magnetic field region.