Groups staff: Prof. Victor M. Ustinov - leader Prof. Vladimir G. Dubrovskii Dr. Anton Yu. Egorov Prof. Alexei E. Zhukov Dr. Alexei R. Kovsh Dr. Nikolai A. Maleev Dr. Vladimir V. Mamutin photo Dr. Daniil A. Livshits Dr. Sergei S. Mikhrin photo Mr. Alexander Kuzmenkov photo Ph.D. student Alexei P. Vasil'ev photo Ph.D. student Elizaveta S. Semenova photo Ph.D. student Ekaterina V. Nikitina student Vladimir V. Odnobludov photo Mr. Alexei B. Erin - technician photo Mr. V. V. Kislinskii - technician photo
list of papers	Vladimir Dubrovskii Was born October 15, 1965, Leningrad, Russia Education 1982 - 1988 - Leningrad State University, Physical faculty 1991 - 1992 - Oxford University, Department of Engineering Science, Post-doctoral research fellowship sponsored by the RACAL group Dissertations: 1990 - PhD Physics of devices, technique of physical experiments, automation of physical research ("Kinetic models for the kinetics of clustering and thin film growth") 2002 - Doctor of Science Condensed matter physics ("Kinetic models of formation of space-ordered structures on solid surfaces") Work experience: 1988 - 1989 – Institute for Analytical Instrumentation RAS (IAI RAS), laboratory of mass-spectrometry, St.-Petersburg. Research engineer 1989 - 1992 - IAI RAS, laboratory of mass-spectrometry. Junior research scientist 1992 - 1995 – IAI RAS, laboratory of epitaxial nanotechnologies. Senior research scientist 1995 - 1998 - IAI RAS. Executive secretary 1998 – 2002 - Scientific Instruments PLC, St.-Petersburg. Research director from 2002 - Ioffe Physical Technical Institute RAS, laboratory of physics of semiconductor heterostructures. Leading research scientist Research interests: Kinetic theory of nanostructure formation during MBE, in particular theory of quantum dot formation in the InAs/GaAs and Ge/Si systems Kinetics of thin film growth on solid surfaces Theory of ordering effects on solid surfaces Kinetic theory of nanowhisker formation Theory of first order phase transitions, nucleation and condensation Adsorption and desorption, adsorbate dynamics MBE technologies of A3B5 growth List of publications includes more than 100 papers. mail to
list of papers	Alexey E. Zhukov Alexey E. Zhukov was born in 1968 in St. Petersburg (former Leningrad), Russia. He received the M.S. degree in physics from the Leningrad Electrical Engineering institute in 1992 and the Ph.D. degree in physics from the Ioffe institute in 1996. Since 1992 he has been working at the A.F.Ioffe Physico-Technical institute, Russian Academy of Sciences (St.Petersburg, Russia) currently as a senior researcher. His research is concentrated on molecular beam epitaxial growth of III-V quantum-sized hetetrostructures. He has a particular interest in design, growth and study of self-organized quantum dot structures for laser and VCSEL applications. He and his collaborators have published over 200 articles in journals and conference proceedings. 26 December 2002 Alexey Zhukov was awarded with Doctor of Physical-Mathematical Sciences(short thesis (rus) .pdf file) mail to
	Alexey R. Kovsh Alexey Kovsh was born in 1973 in St-Petersburg, Russia. He received the M.S. with honors (1996) in Optoelectronics from the St-Petersburg Electrical Engineering University and Ph.D. (1999) in Semiconductor Physics from Ioffe Institute. His research interests are MBE growth of semiconductor heterostructures based on (In, Ga, Al,)(As, N) material system, study the effect of structure design and growth condition on optical, structural and electrical properties of high electron mobility transistors, short-period superlattices, and device performance of edge-emitting and vertical cavity surface emitting lasers (VCSELs) based on quantum wells and quantum dots. From 1996 to 1999, he was a Ph.D. student in Ioffe Institute and since 1999 he has been working as a researcher of the same institution. During this time he spent all together more than two years working as a visitor scientist in Heinrich-Hertz Institute, Berlin (1999), and in Industrial Technology Research Institute, Taiwan (2000-2002) within joint scientific programs with Ioffe Institute. He has authored over 100 papers in refereed journals and conference proceedings. mail to
list of papers	Nikolai A. Maleev Was born March, 1, 1966, Leningrad, USSR Education 1989 - Leningrad Electrical Engineering Institute (currently Electrical Engineering University of St. Petersburg), Chair – Dielectrics and Semiconductors (with honors) Career and research experience “Svetlana-Electrondevices Co.”, St. Petersburg 1989-1992 – engineer 1992 -1995 - senior engineer 1995-1998 – senior engineer, head of research group A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences, Laboratory of Physics of Semiconductor Heterostructures 1998-present time – research scientist 1997 - Candidate of Technical Sciences (Electrical Engineering University of St. Petersburg) PhD thesis: “Capacitance-voltage methods for analysis of GaAs Schottky barrier microstructure” Area of expertise: Physics and design of microwave semiconductor devices (microwave GaAs Schottky diodes, MESFETs, HEMTs, HBTs, varactor diodes), numerical modeling, MBE-growth and fabrication of vertical-cavity surface-emitting lasers, capacitance-voltage profiling of multi-layer structures Number of papers in refereed journals and conference proceedings: >60 mail to
	Daniil A. Livshits Daniil A. Livshits was born in 1968 in St. Petersburg, Russia. He received the M.S. degree in physics in 1993 from the St. Petersburg State Technical University and the Ph.D. degree in physics in 2000 from the Ioffe institute.Since 1990 he was working at the A.F.Ioffe Physico-Technical institute, Russian Academy of Sciences (St.Petersburg, Russia) currently as a researcher-scientist. His research is concentrated on edge-emitting laser diodes and VCSELs based on novel design and new materials A(III)B(V)-system. Developed projects: Al-free high power lasers (l=0.76-0.86mm) Study of facet degradation processes of high power lasers Semiconductor power amplifiers (SOA) Spontaneously formed periodical InGaAsP structures and laser with this active region Managed projects: High power single mode InGaAs/GaAs lasers High power InGaAsN 1.3mm lasers Skills Edge emitting and VCSEL design, design and deposition of optical coatings for lasers and SOA reactive ion etching RIE developing metal deposition for omic contacts chipping and bonding, devise packaging Device and structures characterization (photoluminescence, electrical, short pulse, optical, cryotemperature measurements) Developing hardware of dielectric coating deposition system, die-bonding, measurement setups He has co-authored over 100 papers in refereed journals and conference proceedings mail to
	Ekaterina V. Nikitina was born in St. Petersburg (at that time Leningrad), Russia in 1977. Education 1990-1994 - Physical-mathematical school (a department of St. Petersburg State Electrotechnical University) graduated with honors 1994-2000 - of St. Petersburg State Electrotechnical University, A.F.Ioffe Physico-Technical Institute (Department of Electronics) graduated (a master diploma) 2000- present time - Ph.D. study in St. Petersburg State Electrotechnical University, A.F.Ioffe Physico-Technical Institute Job career 1997-2001 - Probationer in Ioffe Physical-Technical Institute (out of staff) during education. 2001-present time - Probationer-researcher in Ioffe Physical-Technical Institute.