Groups staff: Prof. Nikolai N. Ledentsov - leader Dr. Michail V. Maximov Dr. Yurii M. Shernyakov Dr. Ilia P. Soshnikov Dr. Igor L. Krestnikov Ph.D. student Natalia V. Kryzhanovskaya Ph.D. student Sergei Blokhin Ph.D. student Andrei G. Gladyshev photo
	Mikhail V. Maximov Mikhail V. Maximov graduated from the Leningrad Politechnical Institute (at present St.-Petersburg State Technical University) in 1989. Since 1989 he has worked at Ioffe Physico-Technical Institute in the laboratory of Prof. Zh.I. Alferov. In 1995 he received Candidate of Science in Physics and Mathematics (Ph.D) degree from Ioffe Institute. He has co-authored more than 200 papers including reviews and chapters in books. M.V. Maximov co-authored the first paper on injection lasers based on self-organised quantum dots. This work is the most cited paper in one of the leading journals in the field of electronic – Electronic Letters. In 2000 M.V. Maximov was awarded by the Alexander von Humboldt Research Fellowship and worked at Technical University of Berlin. He was selected as the winner of the first IEEE Journal of Quantum Electronics Best Paper Award (2001). He is a team leader in the number of international and Russian projects (INTAS, NATO linkage projects, RFBR, projects of the Russian Ministry of Sciences). He is an Institute of Physics referee and INTAS evaluator. His main interests are related to development and optical studies of novel optoelectronic devices such as edge emitting and vertical cavity surface emitting lasers based on quantum dots, lasers based on photonic crystals, single photon light sources. mail to
List of papers	Iliya P. Soshnikov Education 1982-1988 - State University, Leningrad, Physics department 1993-1997 - Ph.D. State Technical University, St.-Petersburg. Ph. D. in physics (Can.Sci.). Thesis: "Sputtering of III-V semiconductor materials using Ar+, Xe+, N2+ and mixed Ar+-I2+ ion beams” Career and research experience 1997-present time - Research scientist. A.F.Ioffe Physico-Technical Institute. April –June 1998 MPI fuer Mikrostrkturphysik, Halle Nov.1998-Jul.1999 Lab. fuer Elektronenmikroskopy, Universitaet Karlsruhe Interests: - Structural investigationof semiconductor heterostructures; - Postgrowth methods for semiconductor heterostructures. Awards George Soros Student Grant (1995, 1996) young scientist grantof St.Petersburg city government (1996) mail to
	Igor L. Krestnikov was born in St. Petersburg (at that time Leningrad), Russia in 1973 Education 1980-1988 - State secondary school of St.Petersburg (at that time Leningrad) graduated with honors 1988-1990 - Physical-Technical school (a department of Ioffe Physical-Technical Institute)graduated with Silver Medal 1990-1996- St. Petersburg State Technical University (Physical-Technical department)graduated with honors (average mark was 5.0 at 5-degree scale; the title of master diploma work was „Optical properties of II-VI structures grown by MBE." 1996-1998 - Ph.D. study in Ioffe Physical-Technical Institute. Was awarded with Ph.D. degree in Physics and Math in November 1998 - the title of Ph.D. thesis was „Optical properties of (Zn,Cd)Se/(Zn,Mg)(S,Se) heterostructures with arrays of quantum dots" Career and research experience 1988-1996 - Probationer in Ioffe Physical-Technical Institute (out of staff) during education. 1996-1997 - Probationer-researcher in Ioffe Physical-Technical Institute. 1997-1999 - Junior Research Scientist in Ioffe Physical-Technical Institute. 1999-present time - Research Scientist in Ioffe Physical-Technical Institute. 1997-2000 - visiting scientist in Technical University of Berlin (3 months per year) Awards Ioffe Student Grant (Autumn of 1994 and Spring of 1995) George Soros Student Grant (1995-1996) Prize of the Division of Physics of Semiconductor Heterostructures (Ioffe Institute) for work "Submonolayer quantum islands in wide bandgap compounds: new principles of lasing and waveguiding" (1996) Prize of the Science Council of the Ioffe Institute for work "InGaN/GaN/AlGaN Multilayer Structures and Surface-Emitting Devices Based on this Structures" (1999). mail to
List of papers	Natalia V. Kryzhanovskaya Education 1997-2002 - education in St. Petersburg Electrotechnical University, department of Electronics and Microelectronics. In February 2002 I was graduated with honor from St. Petersburg Electrotechnical University. The title of my engineering diploma work was “Investigation of optical properties of InGaAsN/GaAs heterostructures”. 2002-present - PhD student in Ioffe Physico-Technical Institute, Physics of Semiconductor Laboratory. The title of thesis is „Optical properties of InGaAsN/GaAs epitaxial layers and heterostructures”. Career and research experience 2001-present time - in Ioffe Physico-Technical Institute as an optometrist. Awars: 2002 Ioffe Physico-Technical Institute`s prize in competition for the best young scientist work 2002 E.F.Gross prize for the best work in optic of semiconductors. The title of report was “Optical properties of ultra-thin GaAsN inclusions in GaAs matrix ” 2003 Ioffe Physico-Technical Institute`s prize in competition for the best young scientist work 2003 George Soros Student Grant 2004 George Soros Student Grant mail to
	Sergei A. Blokhin was born in Chita, Russia in 1979. Education 1986-1989 - State secondary school of Cyzyl (Tuva, Russian Federation). 1989-1994 - State secondary school of Rakvere (Estonia). 1994-1996 - State secondary school of St.Petersbug. 1996-2002 - St. Petersburg State Technical University (Physical-Technical Faculty, Department of Solid State Electronics) graduated with honors. Career and research experience 1999-2002 - Probationer in Ioffe Physical-Technical Institute (out of staff) during education. 2002-present time - Probationer-researcher in Ioffe Physical-Technical Institute. mail to