FIELDS:

• Physics and Technology of III-V Semiconductor Heterostructures
• Physics and Technology of Semiconductor Devices Based on Quantum Size Effect Heterostructures
• Semiconductor Quantum Dot Heterostructures and Lasers

EDUCATION:

• 1999 Academic Degree: Doctor of Sciences in Physics and Mathematics from the Ioffe Physico-Technical Institute of Academy of Sciences, St. Petersburg, Russia. Thesis: "Semiconductor Quantum Dot Heterostructures (Fabrication, Properties, Lasers)".
• 1986 Academic Degree: Ph.D. in Physics and Mathematics from the Ioffe Physico-Technical Institute of Academy of Sciences, Leningrad, USSR. Thesis: "Electrical properties of GaAs, AlGaAs and two-dimensional electron gas heterostructures grown by molecular beam epitaxy".
• 1981 Master Degree in Optical Electron Devices (with honor) from Leningrad Electrotechnical Institute, Leningrad, USSR

EMPLOYMENT:

• 1981 - present A.F.IOFFE PHYSICO-TECHNICAL INSTITUTE OF THE RUSSIAN ACADEMY OF SCIENCES, St. Petersburg, Russia
  • Junior Researcher (1981-1989),
  • Researcher (1989-1995),
  • Senior Researcher (1995-1999),
  • Leading Researcher (1999-present),
  • Deputy Head of Laboratory (2001-present)
• 2004 – present Scientific Educational Complex “Saint-Petersburg Physico-Technical Centre of the Russian Academy of Sciences for Research and Education”, St. Petersburg, Russia, Deputy Chairman

TEACHING EXPERIENCE (concurrently):

• 1999 - present St. PETERSBURG STATE ELECTROTECHNICAL UNIVERSITY, St. Petersburg, Russia, Associate Professor at the Chair of Optoelectronics Professor at the Chair of Physics and Technology of Nanostructures

JOURNAL EDITOR

• Member of Editorial Board of "Journal of Technical Physics"

PROFESSIONAL COUNCILS:

• 1999 - present Member of Scientific Council of Center for Nanoheterostructure Physics, Ioffe Physico -Technical Institute, St. Petersburg, Russia
• 2001 - present Member of Scientific Council of Ioffe Physico -Technical Institute that confirms PhD Degrees, St. Petersburg, Russia
• 2001 – present Member of Scientific Council of Institute for Analytical Instrumentation that confirms PhD and Doctor of Sciences Degrees, St. Petersburg, Russia
• 2001 - present Member of Scientific Council for Information Technologies at the Russian Ministry of Atomic Industry

PROFESSIONAL ACTIVITIES:

• Member, Program Committee, 11 and 12 International Conferences on Molecular Beam Epitaxy, Beijing (China) 2000 and San Francisco (USA) 2002;
• Member, Program Committee, 12 and 13 Euro-MBE Workshops, Hinterzarten (Germany) 2001, Bad Hofgastein (Austria) 2003;

SELECTED INVITED TALKS ON RUSSIAN AND INTERNATIONAL CONFERENCES

1. International Symposium “Nanostructures: Physics and Technology”, St. Petersburg, Russia, 1996, “Room temperature CW operation of quantum dot injection laser”
2. 9-th International Conference on Molecular Beam Epitaxy, Malibu, CA, USA, 1996, “Low-threshold injection lasers based on vertically coupled quantum dots”
3. 9-th European Workshop on MBE, Oxford, England, 1997, “MBE growth and characterization of InAs/In(Ga,Al)As self-organized quantum dots on InP substrate”
4. Advanced-Topics Research School on Semiconductor Science and Technology, La Jolla, CA, USA, 1998, “MBE growth of InAs edge-emitting and vertical cavity quantum dot lasers”
5. NATO Advanced Research Workshop “Nanostructured Films and Coatings”, Santorini, Greece, 1999, “Semiconductor quantum dot heterostructures (Growth and applications)”
6. International Symposium “Nanostructures: Physics and Technology”, St. Petersburg, Russia, 2000, “Long wavelength quantum dot lasers on GaAs substrates”
7. 11-th International Conference on Molecular Beam Epitaxy, Beijing, China, 2000, “1.3µm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy”
8. International Workshop “Growth, electronic and optical properties of low-dimensional semiconductor quantum structures”, Schloss Ringberg, Germany, 2001, “Low-temperature growth of InAs nanostructures on GaAs by MBE”
9. SPIE's International Symposium on Optoelectronics, San Jose, CA, USA, 2002, “1.3 micron edge- and surface-emitting quantum dot lasers grown on GaAs substrates”
10. International Quantum Electronics Conference, Moscow, Russia, 2002, “Quantum dot lasers and VCSELs for telecom applications”
11. NATO Advanced Study Institute “Synthesis, Functional Properties & Applications of Nanostructures”, Heraklion, Greece, 2002, “Quantum dot semiconductor lasers”
12. VI Russian Conference on Physics of Semiconductors, St. Petersburg, Russia, 2003, “Quantum Dot Lasers (Current Status and Future Trends)”
13. EU-Russian Workshop “Efficient Use of Solar Spectrum in Photovoltaics”, St. Petersburg, Russia, 2003, “Quantum Dot Technology and Devices”

HONORS

• State Prize of Russian Federation in Science and Technology (2001)
• The IEEE LEOS Journal of Quantum Electronics Best Paper Award (2001)
• Ioffe Institute Scientific Council Prize for the best paper (1987)
• Prizes for the best papers from Ioffe Institute (1996, 2001, 2002, 2003)
• Ioffe Prize for the best paper from Ioffe Institute (1999)
• Russian Presidential Award for Outstanding Scientists (1998)
• First Prize of International Academic Publishing Company “Nauka” for the best series of papers (2000)

VISITING POSITIONS

• Visiting Researcher, University of California, Berkeley, USA ( 1997)
• “Window on Science” lecturing program in USA, sponsored by the European Office of Scientific Research of the US Air Force (1997).

MAIN ACHIEVEMENTS

1. MBE growth technology of semiconductor quantum dots
2. Development of quantum dot semiconductor lasers with low threshold current density, high efficiency, and high output power
3. Realization of quantum dot vertical cavity surface emitting lasers (VCSELs) emitting at 1.3 micron

PUBLICATIONS:

BOOKS PUBLISHED: