SiC devices: Field Effect Transistors,
Diodes, and Thyristors |
Cooperation: CREE
Res., Inc, (USA) |
Main publications (from
2003): |
- T. T. Mnatsakanov, M.
E. Levinshtein, and A. S. Freidlin " Effect of
Auger Recombination on the Thermal Stability of High-Voltage High-Power
Semiconductor Diodes" Semiconductors, v. 42, (2) pp. 220-227 (2008)
- Mnatsakanov, T.; Levinshtein, M.; Tandoev, A.; Yurkov
"Specific features of dynamic injection and base layer modulation processes
in power n+-p-p+diodes" Semiconductors, Vol. 41 Issue 11, p1381-1387, (2007
- Michael E. Levinshtein, Tigran T.
Mnatsakanov, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das and Brett A. Hull
"Steady state self-heating and dc current–voltage characteristics of
high-voltage 4H-SiC p+–n–n+ rectifier diodes"
Solid-State Electronics v. 51, (6) 955-960,
(2007)
-
M E Levinshtein, T T Mnatsakanov, P A Ivanov, J W Palmour, M K Das, and B A
Hull "Isothermal Current-Voltage Characteristics of High Voltage Silicon
Carbide Rectifier P-I-N Diodes at Very High Current Densities" Semicond. Sci.
Technol., v. 22 (3), 253-258 (2007)
- P. A. Ivanov, M. E. Levinshtein, J. W. Palmour, A. K.
Agarwal, and S. Krishnaswami "Current Gain of 4H-SiC High Voltage BJTs at
Reduced Temperatures" Semicond. Sci. Technol., v. 22 (6), 613-615 (2007)
- T T Mnatsakanov, M E Levinshtein, A S Freidlin and J W
Palmour "On the thermal stability of high voltage rectifier diodes"
Semicond. Sci. Technol., v. 21 (9), 1244-1249 (2006)
-
M.
E. Levinshtein, S. L. Rumyantsev, T. T. Mnatsakanov, A. K. Agarwal, J. W.
Palmour "SiC Thyristors" Intern. Journ. of High Speed Eelectron.
and Systems 15 (4), 921-1114 (2006)
-
Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Mrinal K. Das, Brett
A. Hull "High power 4H-SiC pin diodes (10 kV class) with record high carrier
lifetime" Solid-State Electronics 50 (7-8), 1368-1370 (2006)
-
T. T. Mnatsakanov, M. E. Levinshtein,
A. G. Tandoev, P. A. Ivanov , S. N. Yurkov, and J. W. Palmour "Transient
injection and fast switch-on in p-i-n diodes" J. Appl. Phys. 99,
074503 (2006)
-
P. A. Ivanov, M. E. Levinshtein, A.
K. Agarwal, Sumi Krishnaswami, and J.W. Palmour, "Temperature Dependence of
the Current Gain in Power 4H-SiC NPN BJTs" IEEE Trans. on ED, 53, no.5,
pp.1245-1249 (2006)
|
Back |