Cooperation: Cooperation:
Investigation of the low frequency and 1/f noise: |
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| in 4H-SiC, 6H-SiC, and SiC FETs: CREE Res., Inc | ||
| in GaN and GaN/GaAlN Heterostructures: | Univ. of Montpellier (France), Division of Physics of Semiconductor Heterostructures (The Ioffe, Russia) , WBG (Wide Band Group, the Ioffe, Russia), Rensselaer Polytechnic Institute (USA), University of South Caroline, | |
| in Si, GaAs, and Si- and GaAs devices: | Univ. of Montpellier (France), The Ioffe Institute, Russia. | |
| Investigation
of the static and transient properties of thyristors, and power rectifier diodes: |
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| in Si thyristors and diodes: | Laboratory of Power Semiconductor Devices (The Ioffe, Russia) |
|
| in GaAs thyristors and diodes: | Laboratory
of Epitaxial Structures and Devices (The Ioffe, Russia), Univ. of Oulu (Finalnd) |
|
| in SiC thyristors and diodes: | CREE
Res., Inc |
|
| Avalanche injection and breakdown | Univ. of Oulu (Finalnd) | |