Laboratory of
Semiconductor Devices Physics

Recent publications (2005 - 2009):

  1. A.A.Lebedev, I.S. Kotousova,á.á.Lavrent'ev, S.P.Lebedev, I.V. Makarerenko, V.N. Petrov, and á.N.Titkov Formation of Nanocarbon Films on the SiC Surface through Sublimation in Vacuum, Fizika Tverdogo Tela, vol.51, No 4, pÒ. 783-786 (2009).

  2. A.A.Lebedev, P.L.Abramov, N.V.Agrinskaya, V.I.Kozub, S.P.Lebedev, G.A.Oganesyan, A.S.Tregubova, D.V.Shamshur, M.O.Skvortsova. Metal-insulator transition in n-3C-SiC epitaxial films, J.Appl.Phys. 105 (2009) 023706.

  3. A.A.Lebedev, P.L.Abramov,å.V.Bogdanova, á.S.Zubrilov, N.V. Seredova, S.P.Lebedev , D.K Nelson, á.N. Smirnov, and á.S.Tregubova Study of 3ó-SiC, layers grown on the 15R-SiC substrates Fizika i Tekhnika Poluprovodnikov, vol.43,No.6, pp.785-788 (2009)

  4. N.Camara, K.Zakentes, V.V.Zelenin, P.L.Abramov, A.V.Kirillov, L.P.Romanov, N.S.Boltovets, V.A.Krivitsa, A.Thuaine, E.Bano, E.Tsoi, A.A.Lebedev, 4H-SiC p-i-n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes.Semiconductor Science Technology 23 (2008) 025016.

  5. 8.A.A.Lebedev, E.V.Bogdanova, P.L.Abramov, S.P.Lebedev, D.K.Nel’son, G.A.Oganesyan, A.S.Tregubova, R.Yakimova. Highly doped p-3C-SiC on 6H-SiC substrates, Semiconductor Science Technology 23 (2008) 075004.

  6. A.A.Lebedev, P.L.Abramov, N.V.Agrinskaya, V.I.Kozub, A.N.Kuznetsov, S.P.Lebedev, G.A.Oganesyan, L.M.Sorokin, A.V.Chernyaev, D.V.Shamshur, Negative magnetoresistance in SiC heteropolytype junctions, J.Material Science: Materials in Electronic 9, (2008) 793-796.

  7. A.A.Shiryaev, M.Wiedenbeck, V.Reutsky, V.B. Polyakov, N.N.íelnik, A.A.Lebedev, R.Yakimova, Isotopic heterogeneity in synthetic and natural silicon carbide, J. of Physics and Chemistry of Solids 69 (2008) 2492-2498.

  8. A.A.Lebedev, P.L.Abramov, N.V.Agrinskaya, V.I.Kozub, A.N.Kuznetsov, S.P.Lebedev, G.A.Oganesyan, A.V.Chernyaev, D.V.Shamshur. Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures, Material Science Forum V600-603, (2008) 541.

  9. A.M.Ivanov, N.B.Strokan, A.A.Lebedev, Effect of elevated temperatures (up to 250 0C) on operating capacity of heavily irradiated p+-NSiC Detectors, Nuclear Instruments and Methods in Physics Research A 597 (2008) 203.

  10. á.á. Lebedev, P.L.Abramov, V.V.Zelenin , E.V.Bogdanova, S.P.Lebedev, D.K.Nel’son, B.S. Razbirin, M.P. Shcheglov, á.S. Tregubova A Study of Thick 3C-SiC Epitaxial Layers Grown on 6H-SiC Sublimation Epitaxy in Vacuum, Fizika i Tekhnika Poluprovodnikov, vol. 41, (2007) 273-275

  11. á.á. Lebedev , V.V.Zelenin , P.L.Abramov , S.P.Lebedev , á.N.Smirnov, L.M.Sorokin, M.P. Shcheglov , R.Yakimova. Studing 3ó-SiC Epilayers Grown on the(0001)ó Face 6î-SiC Substrate,.Pis'ma v Zhurnal Tekhnicheskoi Fiziki, 2007,vol.33, No 12, pp.61-67.

  12.  A.A.Lebedev, V.V.Zelenin, E.V.Bogdanova, P.L.Abramov, S.P.Lebedev, D.K.Nel’son, B.S.Razbirin, A.S.Tregubova, R.Yakimova. Growth and Study of SiC 3C-SiC Epitaxial Layeers Produced by epitaxy on 6H-SiC Substrate. Mat. Sc. Forum V.556-557 (2007) 175.

  13. .Lebedev A.A. SiC Heteropolytype Structures Grown by sublimation Epitaxy. Material Science Forum V.556-557 (2007) 161.

  14.  A.A.Lebedev, O.Yu.Ledyaev, A.M.Strel’chuk, A.E.Nikolaev, A.S.Zubrilov, A.A.Volkova,Investigation of n-GaN/p-SiC/n-SiC Heterostructures J. Of Crystall Growth 300 (2007) 239.

  15.  Temperature dependence of the Band-Edge Injection electroluminescence of 3C-SiC pn structures, A.M.Strel’chuk,A.A.Lebedev, N.S.Savkina, A.N.Kuznetsov. Mat. Sc. Forum V.556-557 (2007) 427.

  16. . Microwave p-i-n diodes fabricated on 4H-SiC Material grown by sublimation epitaxy in vacuum. N.Camara, L.P.Romanov, A.V.Kirillov, M.S.Boltovets, A.A.Lebedev, V.V.Zelenin, M.Kayambaki and K.Zekentes. Mat. Sc. Forum V.556-557 (2007) 933.

  17.  The influence of the extreme fluence of 8Mev protons on characteristics of Sic nuclear detectors produced by Al implantation. A.M.Ivanov, N.B.Strokan,A.A.Lebedev, V.V.Kozlovski. Mat. Sc. Forum V.556-557 (2007) 961.

  18. . M. Lemmer1, B. Hilling1, M. Wöhlecke1, M. Imlau1, A.A. Lebedev2, V.V. Bryksin2 and M.P. Petrov2 “Trap-recharging waves versus damped, forced charge-density oscillations in hexagonal silicon carbide” Eur. Phys. J. B 60, 9-14 (2007)

  19. S.Yu.Davydov, A.A.Lebedev, O.V.Posrednik, Estimates of the Exiton Transition Energy in nH/3C/nH (n = 2,4,6,8) Heterostructures Based on Silicon Carbide Polytypes Semiconductors, 40 N 5 (2006) 549-553.

  20. A.M.Ivanov, A.A.Lebedev, N.B.Strokan, Carrier transport in a SiC detector subjected to extreme radiation doses. Semiconductors, 40 N 7 (2006) 864-867.

  21. A.A.Lebedev, Hetrojunctions and superlattices based on silicon carbide. Topical review, Semiconductor Science Technology 21 (2006) R17-34

  22. V. I. Sankin, P. P. Shkrebiĭ and A. A. Lebedev, The Wannier-Stark effects in the 6H-SiC planar junction field-effect transistors with a p-n junction as the gate. Semiconductors, 40 N 10 (2006)1237-1241.

  23. A.M.Ivanov, A.A.Lebedev, N.B.Strokan, Effect of extreme radiation fluences on parameters of SiC nuclear particle detectors, Semiconductors, 40 N 10 (2006)1227-1231.

  24. A.A.Lebedev, A.M.Strel’chuk, A.E.Cherenkov, A.N.Kuznetsov, A.S.Tregubova, M.P.Scheglov, L.M.Sorokoin, S.Yoneda, S.Nishino, A Study of n+-6H/n-3C/p+ -6H-SiC Heterostructures Grown by Sublimation Epitaxy , Semiconductors, 40 N 12 (2006) 1398-1401.

  25. K. Zekentes, E.Bano, N.Camara, A.Lebedev Photoemission of 4H-SiC PiN Diodes Epitaxied by the sublimation Method (Proc. ICSCRM’2005, Pittsburgh, US) Mat. Sci. Forum. 527-529 (2006), pp. 391-394.

  26. A.M. Strel’chuk, A.V. Mashichev, A.A.Lebedev, A.A.Volkova, K. Zekentes. About nature of recombination current in 4H-SiC pn structure. (Proc. ICSCRM’2005, Pittsburgh, US) Mat. Sci. Forum. 527-529 (2006), p1343-1346.

  27. Evgenia Kalinina, Anatoly M. Strel'chuk, Alexander A. Lebedev, Nikita B. Strokan, Alexandr M. Ivanov, G. Kholuyanov Radiation Hard Devices Based on SiC Mat. Sci. Forum. 527-529 (2006), p1473-1476

  28. Rositza Yakimova, Alexander A. Lebedev, Alexandr M. Ivanov, Nikita B. Strokan, Mikael Syväjärvi, The Limit of SiC Detector Energy Resolution in Ion Spectometry Mat. Sci. Forum. 527-529 (2006), p1477-1480.

  29. N.B.Strokan, A.M.Ivanov, A.A.Lebedev, Transport of the charge carriers in SiC-detector structures after extreme radiation fluences, Nuclear Instruments and Methods in Physics Research A 569 (2006) 758-763.

  30. A.A.Lebedev , S.Yu.Davydov, Vacancy model of the heteropolytype epitaxy of SiC, Fizika i Tekhnika Poluprovodnikov, vol. 39,No.3, (2005),pp.296-299.

  31. S.Yu.Davydov, .A.Lebedev , N.S.Savkina, Setup Parameters Controlling the Grown Rate of Silicon Carbide Epitaxial Layers in a Vacuum,Zhurnal Tekhnicheskoi Fiziki, vol..75,No.4, 2005,pp114-117.

  32. M.Mynbaeva, A.Lavrent’ev, I.Kotaysova, A.Volkova, K.Mynbaev,A.A.Lebedev, On current limitation in Porous Sic application, Material Science v 483-485 (2005) 269-272

  33. V.V.Kozlovski, e.V.Bogdanova,V.V.Emtsev, K.V.Emtsev, A.A.Lebedev, V.N.Lomasov, Direct experimental Comparison of the effect of Electron Irradiation on the Charge carriers Removal Rate in n-type Silicon and silison carbide. Material Science v 483-485 (2005) 385-388

  34. V.I.Sankin,P.P.Shkrebiy, A.A.Lebedev Wannier-Stark Localization Effects in 6H-Sic JFETs. Material Science v 483-485 (2005) 873-876

  35. A.M.Strel’chuk, V.V.Kozlovski,A.A.Lebedev, N.Yu.Smirnova, Influence on Excess Currents in SiC pn Structures Material Science v 483-485 (2005) 1001-1004

  36. N.B.Strokan, A.M.Ivanov, N.S.Savkina, A.A.Lebedev, V.V.Kozlovski, M.Suvajarvi, R.Yakimova Investigation of the SiC transistor and Diode Nuclear detwectors at 8 MeV protons Irradiation Material Science v 483-485 (2005) 1025-1028

  37. E.V.Bogdanova, A.A.Volkova, A.E.Cherenkov, A.A.Lebedev, R.D.Kakanakov, L.P.Kolaklieva, G.A.Sarov, T.M.Cholakova, A.V.Kirillov and L.P.Romanov, 4î-SiC p-i-n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD. Semiconductors, V.39 (2005) 730.

  38. A.A.Lebedev, D.K.Nel'son, B.S. Razbirin, , I.I.Saidashev, A.N. Kuznetsov, á.å.Cherenkov, Study of a Two-Dimensional Electron Gas in p¯-3C-SiC/n+-6H-SiC heterostructure at low temperatures. Fizika i Tekhnika Poluprovodnikov, vol.39,No.10, (2005),pp. 1236-1238

  39. S.Yu.Davydov, á.á.Lebedev,, ï.V. Posrednik, Estimation of the characteristics of the 3C-SiC/2H-, 4H-, and 8H-SiC heterojunctions, Fizika i Tekhnika Poluprovodnikov, vol.39,No.12, (2005),pp. 1440-1442.

  40. ï.Yu. Ledyaev, á.í.Strel'chuk, á.N. Kuznetsov, N.V.Seredova, á.S.Zubrilov, á.á.Volkova, á.å.Nikolaev, á.á.Lebedev, Electrical properties of n-GaN/p-SiC. Fizika i Tekhnika Poluprovodnikov, Vol.39,No.12, (2005),pp. 1452-1454.

  41. N.B. Strokan, á.M. Ivanov, á.á.Lebedev, M.Syvajarvi, R.Yakimova , Limiting Energy Resolution of SiC detectors in Ion Spectrometry, Fizika i Tekhnika Poluprovodnikov , vjl.39,No. 12, (2005), pp. 1469-1474.

  42. A.M.Strel’chuk, A.A.Lebedev, A.E.Cherenkov, A.N.Kuznetsov, A.S.Tregubova, M.P.Scheglov, L.M.Sorokoin, S.Yoneda, S.Nishino, 6H(n+)/3C(n)/6H(p+) SiC Structures grown by sublimation Epitaxy, Solid State Phenomena, V.108-109 (2005) 713.

  43. M.P.Petrov, V.V.Bryskin, A.A.Lebedev, M.Lemmer, M.Imlau Space charge waves in silicon carbide, J.of Applied Physivs 98 (2005) 083706

 

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