Silicon Carbide Research Group
( Headed by Alexander A. Lebedev, Dr. of Sci.)

Main goal of the group is to develop and investigate SiC-based electronic devices.

Silicon Carbide is a very perspective material for high temperature, high frequency
and high power semiconductor electronic devices. Large band gap, high thermal
conductivity, high saturated electron drift velocity, very high breakdown field, high
radiation hardness, and presence of intrinsic oxide are the factors which  have given
this material its great potential in electronic device field.
In Silicon Carbide Research Group,  technological base for industrial production
of high temperature SiC devices is created now.
  

STAFF

Principal  Researcher
Alexander A. Lebedev, Dr. of Sci.

 

 

Shura.lebe@mail.ioffe.ru

Leading Researcher
  Sergei Yu. Davydov, Dr. of Sci.


sergei_davydov@mail.ru

Leading Egineer
Alexandr A. Lavrentev

Sergei V Belov

Irina S. Kotousova


 AlLavren@yandex.ru ; Belov.Sergey@mail.ioffe.ru

koti@ pop.ioffe.rssi.ru

 

Senior Researchers
Anatoly M. Strelchuk, Candidate of Sci. (Ph. D.)
Marina G. Mynbaeva, Candidate of Sci. (Ph. D.)

Eugenia V Kalinina, Candidate of Sci. (Ph. D.)

Andrey S. Zubrilov, Candidate of Sci. (Ph. D.)


Anatoly.strelchuk@pop.ioffe.rssi.ru

mgm@mail.ioffe.ru

evk.lebe@mail.ioffe.ru

asz.mail@mail.ru

 

Researchers
Elena V. Bogdanova
Natalia Yu. Smirnova
Natalia V.Seredova

le.bog@mail.ioffe.ru

nata.s@mail.ioffe.ru

natasha.seredova@mail.ru

 

Junior Researchers
 Pavel L. Abramov


 Anton V. Sadokhin


pinski@list.ru


aln9t7o9n@mail.ioffe.ru

 

 

PhD Students
 Sergey P. Lebedev

iegreg@mail.ru



MAIN RESULTS

    Technology of SiC epilayers growth with given parameters has been developed.
    Multi-layer n-p-n and n-p-n-p structures have been obtained.

    The processes of metalization were developed which allowed to obtain the low
    resistant ohmic contacts and Schottky diodes with nearly "ideal" current-voltage characteristics.

    The techniques of plasmo-ion etching of SiC were developed .

    Technology of device packaging was developed.

    The concentration and main parameters of native, artificially introduced, and
    radiation defects were investigated. The effect of these traps on recombination
    processes in SiC epilayers and devices was studied.

    Lifetimes and diffusion lengths of minority carriers were investigated in SiC in
    wide temperature range from 77 K to 800 K.

    Photoelectric characteristics of SiC p-n structures and Schottky diodes were
    investigated.

SiC-based semiconductor devices of many types were produced in Silicon Carbide Research Group: Schottky diodes, rectifier diodes, photodetectors, suppresser diodes,
Field Effect Transistors (JFETs and MESFETs), dynistors, nuclear detectors, IMPATT-diodes.


Main technological process: Silicon Carbide Sublimation Epitaxy
SiC epitaxial growth is carried out at pressure 10-6 Torr in vertical quartz reactor
at temperature of  2000° C.

 

ADVANTAGES

    Sublimation etching " in situ " at high temperature dev_Sm.jpg (25037 bytes)
    allows to eliminate mechanical polishing of the surface. The height of macro-steps on etched surface corresponds to a single 6H-SiC cell (does not exceed 15-20    A ).

    Sublimation epitaxy can be used to reduce the density
    of structural defects in SiC substrates prepared by modified Lely (ML) method. Epilayers grown on ML substrates with uniformly distributed basal dislocations have higher structure perfection than the native substrates     (dislocation density is decreased,
    shallow pores are closed    ).

    Low-doped n-SiC epilayers with
    (N    d-Na) ~ (7-9) x1014 cm-3 and hole diffusion
    length of about 2.5-3     m m were obtained.
    High growth rate of epitaxy of about 20 m m/h
    was achieved. Diodes with breakdown voltages up
    to several kilovolts and bipolar transistors with large coefficient gain can be fabricated on the base of these epilayers.

    Heteroepitaxial growth of epitaxial layers of 3C-SiC with operation area of
    about     ~ 1cm2 and very high level of structural perfection is possible on base
    of 6H SiC substrates.

    This technology can be successfully used for growth thick high quality
    epilayers on     porous SiC buffer.

    Sublimation epitaxy setup can be used for obtained nano-carbon films on SiC surface.

Recent publications (2005 - 2009)

This page was last updated on 23-07-09.

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