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A.V. Gert, A.V.Belolipetskii, I.D. Avdeev,
Density of electronic states in silicon nanocrystals embedded in a SiO2 matrix and passivated by hydrogen,
J. Opt. Technol. 91, 383 (2024)
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A.P. Dmitriev, A.V. Gert, M. E. Levinshtein, V.S. Yuferev,
Collector modulation in high-voltage bipolar transistor in the saturation mode: Analytical approach,
J. Appl. Phys. 123, 134503 (2018)
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A.V. Gert, A.P. Dmitriev, M. E. Levinshtein, V.S. Yuferev, and J.W. Palmour,
Diffusion of minority carriers against electric field (high injection level),
Appl. Phys. Lett. 111, 203503 (2017)
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A.V. Gert, M.O. Nestoklon, A.A. Prokofiev, I.N. Yassievich,
Tight-binding simulation of silicon and germanium nanocrystals,
Semiconductors 51, 1274 (2017)
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A.V. Gert, A.A. Prokofiev, I.N. Yassievich,
Lattice deformation in silicon and germanium nanocrystals,
pss(a) 213, 2875 (2016)
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A.V. Gert, M.O. Nestoklon, I.N. Yassievich,
Effective Hamiltonian of silicene in the presence of electric and magnetic fields,
J. Exp. Theor. Phys. 123, 851 (2016)
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A.V. Gert, I.N. Yassievich,
Self-trapped excitons on the surface of Si nanocrystals in SiO2,
physica status solidi (b) 252, 130 (2015)
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A.V. Gert, I.N. Yassievich,
Radiation spectrum of hot excitons in si nanocrystals,
Lith. J. Phys. 55, 292 (2015)
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A.V. Gert, I.N. Yassievich,
Role of surface self-trapped excitons in the energy relaxation of photoexcited silicon nanocrystals,
Semiconductors 49, 492 (2015)
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A.V. Gert, M.O. Nestoklon, I.N. Yassievich,
Band structure of silicene in the tight binding approximation,
J. Exp. Theor. Phys. 121, 115 (2015)
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A.V. Gert, I.N. Yassievich,
Carrier dynamics in Si nanocrystals in an SiO2 matrix investigated by transient light absorption,
Phys. Rev. B 88, 155304 (2013)
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A.V. Gert, I.N. Yassievich,
Radiative and nonradiative recombination of self-trapped exciton on silicon nanocrystal interface,
Jetp Lett. 97, 87 (2013)
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Dr. Anton Gert