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M. A. Rakitskii, K. S. Denisov, I. V. Rozhansky, and N. S. Averkiev,
Resonant spin dynamics of 2D electrons with strong Rashba and Zeeman couplings,
Physica E , 166 #116147 (2025)
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K.S. Denisov, I.V. Rozhansky, S.O. Valenzuela,I. Žutić,
Terahertz spin-light coupling in proximitized Dirac materials,
Phys. Rev. B, 109, #L201406 (2024)
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V. N. Mantsevich, I. V. Rozhansky, D.A.Frolov, N. S. Maslova, N. S. Averkiev,
Effective spin filtering in correlated semiconductor nanostructrues,
J. Magn. Magn. Mater 587, 171357 (2023)
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I. V. Rozhansky, I. V. Kalitukha, G. S. Dimitriev, O. S. Ken, M. V. Dorokhin, B. N. Zvonkov, D. S. Arteev, N. S. Averkiev, and V. L. Korenev,
Optically Induced Spin Electromotive Force in a Ferromagnetic–Semiconductor Quantum Well Structure,
Nano Lett. 23, 3994 (2023)
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I. V. Rozhansky, V. N. Mantsevich, N. S. Maslova, P. I. Arseyev, N. S. Averkiev,
Dynamic electron spin injection in semiconductor nanostructures,
J. Magn. Magn. Mater 565, 170303 (2023)
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Y. Gindikin, I. Rozhansky, V.A. Sablikov
Electron pairs bound by the spin–orbit interaction in 2D gated Rashba materials with two-band spectrum,
Physica E: Low-Dimensional Systems and Nanostructures 146, 115551 (2023)
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M. A. Rakitskii, K. S. Denisov, E. Lähderanta, and I. V. Rozhansky
Intricate features of electron and hole skew scattering in semiconductors,
Phys. Rev. B 106, 085203 (2022)
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V. I. Safarov, I. V. Rozhansky, Z. Zhou, B. Xu, Z. Wei, Z.-G. Wang, Y. Lu, H. Jaffrès, H.-J. Drouhin,
Recombination Time Mismatch and Spin Dependent Photocurrent at a Ferromagnetic-Metal–Semiconductor Tunnel Junction, Phys. Rev. Lett 128, 057701 (2022)
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Igor Rozhansky, Konstantin Denisov,
Topological Hall effect,
In Woodhead Publishing Series in Electronic and Optical Materials,
Magnetic Skyrmions and Their Applications, pages 289-314 (2021), Ed.: G. Finocchio, C. Panagopoulos
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M. Raju, A. P. Petrović, A. Yagil, K. S. Denisov, N. K. Duong, B. Göbel, E. Şaşıoğlu, O. M. Auslaender, I. Mertig, I. V. Rozhansky & C. Panagopoulos,
Colossal topological Hall effect at the transition between isolated and lattice-phase interfacial skyrmions,
Nature Communications 12, 2758 (2021)
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I. V. Rozhansky, V. N. Mantsevich, N. S. Maslova, P. I. Arseyev, N. S. Averkiev, E. Lähderanta,
Ultrafast electrical control of optical polarization in hybrid
semiconductor structure,
Physica E 132, 114755 (2021)
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M. A. Rakitskii, K. S. Denisov, I. V. Rozhansky, and N. S. Averkiev
Fingerprints of the electron skew scattering on paramagnetic impurities in semiconductor systems,
Appl. Phys. Lett. 118, 032105 (2021)
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I. V. Rozhansky, D. Quang To, H. Jaffres, and H.-J. Drouhin,
Chirality-induced tunneling asymmetry at a semiconductor interface,
Phys. Rev. B 102, 045428 (2020)
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L.A. Yung, K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
Chiral spin structure of electron gas in systems with magnetic skyrmions,
J. Magn. Magn. Mater 506, 166755 (2020)
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I. V. Rozhansky, V. N. Mantsevich, N. S. Maslova, P. I. Arseyev, N. S. Averkiev, E. Lähderanta,
Split-off states in tunnel-coupled semiconductor heterostructures for ultrafast modulation of spin and optical polarization,
Phys. Rev. B 101, 045305 (2020)
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K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
Chiral spin ordering of electron gas in solids with broken time reversal symmetry,
Scientific Reports 9, 10817 (2019)
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I. V. Rozhansky, K. S. Denisov, M. B. Lifshits, N. S. Averkiev, E. Lähderanta,
Topological and Chiral Spin Hall Effects,
Phys. Status Solidi B, 1900033 (2019)
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V. N. Mantsevich, I. V. Rozhansky, N. S. Maslova, P. I. Arseyev, N. S. Averkiev, E. Lähderanta,
Mechanism of ultrafast spin-polarization switching in nanostructures,
Phys. Rev. B 99, 115307 (2019)
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J. Nokelainen, I. V. Rozhansky, B. Barbiellini, E. Lähderanta, and K. Pussi,
Gate-tunable magnetism of C adatoms on graphene,
Phys. Rev. B 99, 035441 (2019)
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K. S. Denisov, I. V. Rozhansky, M. N. Potkina, I. S. Lobanov, E. Lähderanta, and V. M. Uzdin,
Topological Hall effect for electron scattering on nanoscale skyrmions in external magnetic field,
Phys. Rev. B 98, 214407 (2018)
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K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
General theory of the topological Hall effect in systems with chiral spin textures,
Phys. Rev. B 98, 195439 (2018)
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N. S. Maslova, I. V. Rozhansky, V. N. Mantsevich, P. I. Arseyev, N. S. Averkiev, E. Lähderanta,
Dynamic spin injection into a quantum well coupled to a spin-split bound state,
Phys. Rev. B 97, 195445 (2018)
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K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
A nontrivial crossover in topological Hall effect regimes,
Scientific Reports 7, 17204 (2017)
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K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
Spin-dependent tunneling recombination in heterostructures with a magnetic layer,
Semiconductors 51, 43 (2017)
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K. S. Denisov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
Electron Scattering on a Magnetic Skyrmion in the Nonadiabatic Approximation,
Phys. Rev. Lett 117, 027202 (2016)
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I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
Resonant tunneling between two-dimensional layers accounting for spin-orbit interaction,
Phys. Rev. B 93, 195405 (2016)
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I. V. Rozhansky, I. V. Krainov, N. S. Averkiev, B. A. Aronzon, A. B. Davydov, K. I. Kugel, V. Tripathi, E. Lähderanta,
Resonant indirect exchange via spatially separated two-dimensional channel,
Appl. Phys. Lett. 106, 252402 (2016)
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L. N. Oveshnikov, V. A. Kulbachinskii, A. B. Davydov, B. A. Aronzon, I. V. Rozhansky, N. S. Averkiev, K. I. Kugel and V. Tripathi,
Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure,
Scientific Reports 5, 17158 (2015)
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I. V. Rozhansky, V. Yu. Kachorovskii, and M. S. Shur,
Helicity-Driven Ratchet Effect Enhanced by Plasmons,
Phys. Rev. Lett. 114, 246601 (2015)
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Ya. V. Terent'ev, S. N. Danilov, H. Plank, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, I. V. Rozhansky, S. V. Ivanov, D. R. Yakovlev, S. D. Ganichev,
Magnetooptical study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum well structures,
J. Appl. Phys. 118, 113906 (2015)
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I. V. Rozhansky, K. S. Denisov, N. S. Averkiev, I. A. Akimov, E. Lähderanta,
Spin-dependent tunneling in semiconductor heterostructures with a magnetic layer,
Phys. Rev. B 92, 125428 (2015)
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I. V. Kraynov, I. V. Rozhansky, N. S. Averkiev, E. Lähderanta,
Indirect exchange interaction between magnetic adatoms in graphene,
Phys. Rev. B 92, 155432 (2015)
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