References:

• Achtziger, N., W. Witthuhn,Band gap states of Ti, V, and Cr in 4H--silicon carbide. Appl. Phys. Lett. 71, 1 (1997), 110-112.
• Anikin, M.M., Zubrilov A.S., Lebedev A.A., Strelchuk A.M., Cherenkov A.E., Recombination processes in 6H-SiC p--n structures and the influence of deep centers. Soviet Phys. Semicond 25, 3 (1991), 289-293.
• Anikin, M.M., Lebedev, A.A., Syrkin, A.L., Suvorov, A.V. Investigation of deep levels in SiC by capacitance spectroscopy methods. Sov. Phys. Semicond. 19 (1985) 69.
• Anikin, M.M., Levinshtein M.E., Popov I.V., Rastegaev V.P., Strel'chuk A.M., Syrkin A.L., Temperature dependence of the avalanche breakdown voltage of silicon carbide p-n. Soviet Phys. Semicond. 22, 9 (1988), 995-998.
• Ahuja, R., Ferreira da Silva, A. , Persson, C., J. M. Osorio-Guillen, I. Pepe, K. Jarrendahl, O. P. A. Lindquist, N. V. Edwards, Q. Wahab, B. Johansson. Optical properties of 4H--SiC. J. Appl. Phys. 91,4 (2002), 2099-2103.
• Aril, G., Schodder, G.R. J. Acoust. Soc. Am. 37 (1965) 384.
• Barrett, D.L., Campbell, R.B. J. Appl. Phys. 38,1 (1967) 53.
• Bellotti, E., H.E. Nilsson, K.F. Brennan, P.P. Ruden, Ensemble Monte Carlo calculation of hole transport in bulk 3C--SiC. J. Appl. Phys. 85, 6 (1999), 3211-3217.
• Bimberg, D., Altarelli, M., Lipari, N.O. Solid State Commun. 40 (1981) 437.
• Burgemeister, E.A., W. von Muench, E. Pettenpaul, Thermal conductivity and electrical properties of 6H silicon carbide. J. Appl. Phys. 50, 9 (1979), 5790-5794.
• Casady, J.B., R.W. Johnson, Solid State Electr. 39, 10 (1996), 1409-1422.
• Chang, H.C., Le May, Ch.Z., Wallace, L.F. Silicon carbide - a high temperature semiconductor , Eds. O'Connor, J.R., Smiltens, J., Oxford, London, New York, Paris: Pergamon Press 1960, 496.
• Chen, G.D., J.Y. Lin, H.X. Jiang, Effects of electron mass anisotropy on Hall factors in 6H-SiC. Appl. Phys. Lett. 68, 10 (1996), 1341-1343.
• Chinone, Y., S. Ezaki, F. Fuijita, R. Matsumoto, Springer Proc. Phys. 43 (1989), 198-206.
• Chow, T.P, Ghezzo. SiC power devices. in III-Nitride, SiC, and Diamond Materials for Electronic Devices. Eds. Gaskill D.K, Brandt C.D. and Nemanich R.J., Material Research Society Symposium Proceedings, Pittsburgh, PA. 423 (1996), 69-73.
• Choyke, W.J, Mater. Res. Bull. 4 (1969), 141.
• Choyke, W.J., Matsunami H., Pensi G. (eds.). Silicon Carbide: A Review of Fundamental Questions and Applications to Current Device Technology , 1st ed., Akademie Verlag, Berlin, 1997.
• Choyke, W.J., Patrick, L., .Hamilton, D.R. Proc. 7th Int. Conf. Semicond. , Paris 1964, M. Hulin ed., Dunod, Paris, 1964, 751.
• Choyke, W.J., Pensi G., Mater. Res. Bull (1997), 25-29.
• Choyke, W.J., Patrick, L. Luminescence of Donor-Acceptor Pairs in Cubic SiC. Phys. Rev. B 2 (1970) 4959.
• Dalibor, T., G. Pensi, N. Nordell, A. Schoner, W.J. Choyke Abstracts on International Conference on SiC, III-V Nitrides and Related Materials , Aug. 31-Sept. 5, 1997, Stockholm, Sweden, 55-56.
• Dalven, R. J. Phys. Chem. Solids 26 (1965) 439.
• Dean, P.J., Choyke, WJ., Patrick, L. J. Lumin. 15 (1977) 299.
• Dean, P.J., W.J. Choyke, L. Patric, J. Lumin. 10 (1977), 299-314.
• Dobson, M.M. Silicon Carbide Alloys. Research Reports in Materials Science, Vol. 11 , Parthenon Press, Carnforth, Lancashire, England, 1986.
• Dombrowski, K.F., U. Kaufmann, M. Kunzer, K. Mayer, V. Schneider, V.B. Shields, M.G. Spencer, Deep donor state of vanadium in cubic silicon carbide (3C-SiC). Appl. Phys. Lett. 65, 14 (1994), 1811-1813.
• Drowart, J, G. De Maria, M.G. Ingram, J. Chem. Phys. 29, 5 (1958), 1015-1021.
• Dubrovskii, G.B., A.A. Lepneva, E.I. Radovanova, Phys. Stat. Solidi (b) 57, 1 (1973), 423-431.
• Dubrovskii, G.B., E.I. Radovanova, Phys. Lett. 28A, 4 (1968), 283-284.
• Dubrovskii, G.B., E.I. Radovanova, Phys. Stat. Solidi (b) 48, 2 (1971), 875-879.
• Dubrovskii, G.B., Lepneva, A.A. Energy band structure and optical spectra of silicon carbide crystals. Sov. Phys. Solid State 19 (1977) 729; Fiz. Tverd. Tela 19 (1977) 1252.
• A. van Duijn-Arnold, Schmidt, J., Poluektov, O. G., Baranov, P. G., Mokhov, E. N. Electronic structure of the Be acceptor centers in 6H-SiC. Phys. Rev. B 60, 23 (1999), 15799-15823
  
• A. van Duijn-Arnold, Schmidt, J., Poluektov, O. G., Baranov, P. G., Mokhov, E. N. Electronic structure of the N donor center in 4H-SiC and 6H-SiC. Phys. Rev. B 64 (2001), 085206-085223.
• Ellis, B., Moss, T.S. Proc. Royal Soc. A, London 299 (1967) 383, 393.
• Evwaraye, A.O, S.R. Smith, W.C. Mitchel, Shallow levels in n-type 6H-silicon carbide as determined by admittance spectroscopy. J. Appl. Phys. 75, 7 (1994), 3472-3476.
• Evwaraye, A.O., S.R. Smith, W.C. Mitchel, Shallow and deep levels in n-type 4H-SiC. J. Appl. Phys. 79, 10 (1996), 7726-7730.
• Evwaraye, A.O., S.R. Smith, W.C. Mitchel, H.McD. Hobgood, Boron acceptor levels in 6H-SiC bulk samples. Appl. Phys. Lett. 71,9 (1997), 1186-1188.
• Feldman, D.W., Parker, J.H., Choyke, W.J., Patrick, L. Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes 3C, 4H, 6H, 15R, and 21R. Phys. Rev. 173, 3 (1968) 787.
• Frantsevich, I.N., F.F. Voronov, S.A. Bakuta, Anisotropy in Single Crystal Refractory Compounds, Vol. 2 , Plenum Press, New York, 1968, p. 493. See also Elastic Constants and Elastic Modulus in Metals and Non-metals, Naukova Dumka, Kiev, 1982 (in russian) .
• Freitas, J.A., Jr. Photoluminescence Spectra of SiC Poly types , in Properties of Silicon Carbide. Ed. Harris, G.L., EMIS Datareviews Series, No. 13, 1995, 29-41.
• Gmelins Handbuch der Anorganischen Chemie , 8th edition, Silicium, Part B, Weinheim, Verlag Chemie, GmbH, 1959.
• Galeskas, A., J. LSiCros, V. Grivickas, U. Lindefelt, C. Hallin, Proceedings of the 7th International Conference on SiC, III-Nitrides and Related Materials , Aug. 31-Sept. 5, 1997, Stockholm, Sweden 1997, 533-536.
• Goldberg Yu., Levinshtein M.E., Rumyantsev S.L. in Properties of Advanced SemiconductorMaterials GaN, AlN, SiC, BN, SiC, SiGe . Eds. Levinshtein M.E., Rumyantsev S.L., Shur M.S., John Wiley & Sons, Inc., New York, 2001, 93-148.
• Gomes de Mesquita, A.H. Acta Crystallogr. 23 (1967) 610.
• Gorban', I.S., Gubanov, V.A., Lysenko, V.G., Pletyushkin, A.A., Timofeev, V.B. Fine structure of s states of indirect excitons in cubic silicon carbide. Sov. Phys. Solid State 26 (1984) 1385 ; Fiz. Tverd. Tela 26 (1984) 2282 (in russian).
• Grivickas, V., J. LSiCros, A. Galeskas, Proceedings of the 7th International Conference on SiC, III-Nitrides and Related Materials , Aug. 31-Sept. 5, 1997, Stockholm, Sweden, 1997, pp. 529-532.
• Groth, R., E. Kauer, Phys. Stat. Solidi 1, 5 (1961), 445-450.
• Hagen, S.H., Kapteyns, C.J. Philips Res. Repts. 25 (1970) 1.
• Harris, G.L. (ed.). Properties of Silicon Carbide , INSPEC, Institution of Electrical Engineers, London, 1995.
• Harris, G.L., Thermal conductivity of SiC , in Properties of Silicon Carbide. Ed. Harris, G.L., EMIS Datareviews Series, N13, 1995a, 5-6.
• Harris, G.L., Density of SiC , in Properties of Silicon Carbide. Ed. Harris, G.L., EMIS Datareviews Series, N13, 1995b, 3.
• Harris, G.L., Young's modulus of SiC , in Properties of Silicon Carbide. Ed. Harris, G.L., EMIS Datareviews Series, N13, 1995c, 8.
• Hemstreet, L.A., Fong, C.Y. Silicon Carbide - 1973, Eds. Marshall, R.C., Faust, J.W., Ryan, C.E., Univ. of South Carolina Press, Columbia, S.C. 1974, 284.
• Hobgood, McD.H., R.C., Glass, G. Augustine, R.H. Hopkins, J. Jenny, M. Skowronski, W.C. Mitchel, M. Roth, Semi-insulating 6H--SiC grown by physical vapor transpor. Appl. Phys. Lett. 66, 11 (1995), 1364-1366.
• Humphreys, R.G., Bimberg, D., Choyke, WJ. Solid State Commun. 39 (1981) 163.
• Ikeda, M., Matsunami, H., Tanaka, T.Site effect on the impurity levels in 4H, 6H, and 15R SiC. Phys. Rev. B 22, 6 (1980), 2842-2854.
• Ivanov, P.A., M.E. Levinshtein, K.G. Irvine, O. Kordina, J.W. Palmour, S.L. Rumyantsev, R. Singh, Electron. Lett. 35, 11 (1999), 1382-1383.
• Kalnin, A.A., Pasynkov, V.V., Tairov, Y.M., Yaskov, D.A. Sov. Phys.Solid. State 8 (1967) 2381.
• Kamitani, K., M. Grimsditch, J.C. Nipko, C.-K. Loong, M. Okada, I. Kimura, The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals. J. Appl. Phys. 82, 6 (1997), 3152-3154.
• Kaplan, R., Wagner, R.J., Kim, HJ., Davis, R.F. Solid State Commun. 55 (1985) 67.
• Karch, K., P. Pavone, W. Windl, O. Schutt, D. Strauch, Ab initio calculation of structural and lattice-dynamical properties of silicon carbide. Phys. Rev. B 50, 23 (1994), 17054-17063.
• Kern, E.L, Hamill, D.W., Deem, H.W., Sheets, H.D. Mater. Res. Bull. 4 (1969) 25.
• Kern, E.L., D.W. Hamil, H.W. Deam, H.D. Sheets, Mater. Res. Bull., Special Issue 4 (1969), S25-S32. Proceedings of the International Conference on Silicon Carbide, University Park, Pennsylvania, USA, October 20-23 1968.
• Khan, I.A, J.A. Cooper, Am. Sci. Forum 264-268 (1998), 509-512.
• Khan, I. A., J. A. Cooper, Jr., "Measurement of High-Field Electron Transport in Silicon Carbide," IEEE Trans. on Electron Devices, 47, 269 (2000).
• Kimoto, T., N. Miyamoto, H. Matsunami, IEEE Trans. Electron Dev. 46, 3 (1999), 471-477.
• Kinoshita, T., M. Schadt, K.M. Itoh, J. Muto, G. Pensi, Abstracts of International Conference on Silicon Carbide, III-Nitrides, Related Materials Stockholm, Sweden, Aug. 31-Sept. 5, 1997, 631-632.
• Konstantinov, A.O., Influence of temperature on impact ionization and avalanche breakdown in silicon carbide. Soviet Phys. Semicond. 23, 1 (1989), 31-35.
• Konstantinov, A.O., Avalanche breakdown filamentation in silicon carbide. Soviet Phys. Semicond. 23, 1 (1989), 31-35.
• Konstantinov, A.O., N. Nordell, Q. Wanab, U. Lindefelt, Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide. Appl. Phys. Lett. 73, 13 (1998), 1850-1852.
• Konstantinov, A.O., Q. Wahab, N. Nordell, , U. Lindefelt, Ionization rates and critical fields in 4H silicon carbide. Appl. Phys. Lett. 71, 1 (1997), 90-92.
• Kordina, O., J.P. Bergman, C. Hallin, E. Janzen, The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layers. Appl. Phys. Lett. 69, 5 (1996), 679-681.
• Kroko, L.J., Milnes, A.G. Solid-State Electron. 9 (1966) 1125.
• Kunc, K., Balkanski, M, Nusimovici, M.A. Phys. Status Solidi (b) 72 (1975) 229.
• Kushawa, M.S. Phys. Status Solidi (b) 111 (1982) 337.
• Kuwabara, H., K. Yamanaka, S. Yamada, Phys. Stat. Solidi A 37 (1976), K157-K161.
• Kuwabara, H., S. Yamada, Phys. Stat. Solidi A 30 (1975), 739-746.
• Kuwabara, H., Yamada, S. Phys. Status Solidi A 30 (1975) 739.
• Kuwabara, H., Yamanaka, K., Yamada, S. Phys. Status Solidi A 37 (1976) K 157.
• Kuznetsov, N.I., A.P. Dmitriev, A.S. Furman, Properties of a center associated with an Al impurity in 6H-SiC. Semiconductors 28, 6 (1994), 584-586.
• Kuznetsov, N.I., A.S. Zubrilov, Mater. Sci. Eng. B 29 (1995), 181-184.
• Kuznetsov, N.I., J.A. Edmond, Effect of deep levels on current excitation in 6H-SiC diodes. Semiconductors 31, 10 (1997), 1049-1052.
• Kyuregyan, A.S., S.N. Yurkov, Room-temperature avalanche /breakdown voltages of p-n junctions made of Si, Ge, SiC, GaAs, GaP, and InP. Soviet Phys. Semicond. 23, 10 (1989), 1126-1132.
• Lambrecht, W.R.L, B. Segall, W. Suttrop, M. Yoganathan, R.P. Devaty, W.J. Choyke, J.A. Edmond, J.A. Powell, M. Alouani, Optical reflectivity of 3C and 4H-SiC polytypes: Theory and experiment. Appl. Phys. Lett. 63, 20 (1993), 2747-2749.
• Lambrecht, W.R.L., B. Segall, W. Suttrop, M. Yoganathan, R.P. Devaty, W.J. Choyke, J.A. Edmond, J.A. Powell, M. Alouani,Calculated and measured uv reflectivity of SiC polytypes. Phys. Rev. B 50, 15 (1994), 10722-10726.
• Lebedev, A.A, Poletaev, N.K, Deep centers and electroluminescence of boron-doped 4H-Si p-n structures. Semiconductors 30 (1996), 238-241.
• Lebedev, A.A., D.V. Davydov, Investigation of the parameters of deep centers in n-6HSiC epitaxial layers obtained by gas-phase epitaxy. Semiconductors 31, 9 (1997), 935-937.
• Lebedev, A.A., Deep level centers in silicon carbide: A review. Semiconductors 33, 2 (1999), 107-130.
• Lee, D.H., Joannopoulos, J.D. Simple Scheme for Deriving Atomic Force Constants: Application to SiC. Phys. Rev. Lett. 48 (1982) 1846.
• Lindefelt, U., Doping-induced band edge displacements and band gap narrowing in 3C--, 4H--, 6H--SiC, and Si. J. Appl. Phys. 84, 5 (1998), 2628-2637.
• Logothetidis, S., J. Petalas, Dielectric function and reflectivity of 3C--silicon carbide and the component perpendicular to the c axis of 6H--silicon carbide in the energy region 1.5--9.5 eV. J. Appl. Phys. 80, 3 (1996), 1768-1772.
• Lomakina, G. A., Vodakov, Yu. A., Mokhov E. N. Piezoresistance of alpha-SiC doped with B, Be, and Ga. Sov. Phys. Solid State19, 1643 (1977).
  
• Madelung, O. (ed.), Semiconductor: group IV elements and III-V compound . Series "Data in science and technology", ed. R.Poerschke, Shpringer -Verlag, Berlin,1991, 164.
• Marshall, R., Mater. Res. Bull., Special Issue 4 (1969), S73-S84. Proceedings of the International Conference on Silicon Carbide, University Park, Pennsylvania, October 20-23, 1968).
• Martinez, A., Lindefelt, U., Hjelm, M., Nilsson, H.-E. Monte Carlo study of hole mobility in Al-doped 4H--SiC. J. Appl. Phys.91 (2002), 1359-1364 .
  
• Maslakovets, Yu.P., Mokhov, E.N., Vodakov, Yu.A., Lomakina, G.A. Sov. Phys.Solid. State 10 (1968) 634 (in russian).
• Meyer, B. K., Hofmann, D. M., Volm, D., Chen, W. M., Son, N. T., Janzen E. Optically detected cyclotron resonance investigations on 4H and 6H SiC: Band-structure and transport properties. Phys. Rev. B 61, (2000), 4844-4849.
  
• Mickevicius, R., J.H. Zhao, Monte Carlo study of electron transport in SiC. J. Appl. Phys. 83, 6 (1998), 3161-3167.
• Mitchel, W.C., R. Perrin, J. Goldstein, M. Roth, S.R. Ahoujja, A.D. Smith, A.O. Evwaraye, J.S. Solomon, G. Laudis, J. Jenny, H.McD. Hobgood, Abstracts of International Conference on SiC, III-Nitrides and Related Materials , Aug. 31-Sept. 5, 1997, Stockholm, Sweden, 1997, pp. 585-586.
• Mokhov, E.N., Vodakov, Yu.A., Lomakina, G.A. Sov. Phys. Solid.State 11 (1969) 415.
• Morelli, D., J. Hermans, C. Beetz, W.S. Woo, G.L. Harris, C. Taylor, in Silicon Carbide and Related Materials Eds. Spencer, M.G., et al., Institute of Physics Conference Series N137, 1993, 313-316.
• Nakashima, S, K. Tahara, Raman scattering determination of structures for SiC polytypes: Quantitative evaluation with a revised model of lattice dynamics. Phys. Rev. B 40, 9 (1989), 6339-6344.
• Nelson, W.E., Holder, F.A., Rosenbloom, A. J. Appl. Phys. 37 (1966) 333.
• Neudeck, P.G., C. Fazi, Proceedings of the 7th Int. Conf. on SiC, III-Nitrides and Relat. Mat. , Aug. 31-Sept. 5, 1997, Stockholm, Sweden, 1997, 1037-1040.
• Nilsson, O., H. Mehling, R. Horn, J. Fricke, R. Hofmann, S.G. Muller, R. Eckstein, D. Hofmann, High Temperatures-High Pressures 29 (1997), 73-79.
• Nishino, S., Powell, J.A., Will, H.A. Production of large-area single-crystal wafers of cubic SiC for semiconductor. Appl. Phys. Lett. 42 (1983) 460-462.
• Olego, D., Cardona, M., Vogi, P. Pressure dependence of the optical phonons and transverse effective charge in 3C-SiC. Phys. Rev. B 25 (1982) 3878.
• Olego, D, Cardona, M., Pressure dependence of Raman phonons of Ge and 3C-SiC. Phys. Rev. B 25, 2 (1982), 1151-1160.
• Orner B. A., D. Hits, J. Kolodzey, F. J. Guarin, A. R. Powell, and S. S. Iyer. Optical absorption in alloys of Si, Ge, C, and Sn. J. Appl. Phys. 79, 11 (1996) 8656-8659.
• Park, C.H., B.-H. Cheong, K.-H. Lee, K.J. Chang, Structural and electronic properties of cubic, 2H, 4H, and 6H SiC. Phys. Rev. B 49, 7 (1994), 4485- 4493.
• Patrick, L, Hamilton, D.R., Choyke, W.J. Optical Properties of 15R SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption. Phys. Rev. 132 (1963) 2023-2031.
• Patrick, L., Choyke, W.J. Optical Absorption in n-Type Cubic SiC. Phys. Rev. 186, 3 (1969), 775-777.
• Patrick, L., Choyke, W.J. Static Dielectric Constant of SiC. Phys. Rev. B 2 (1970) 2255-2256.
• Patrick, L., Hamilton, D.R., Choyke, W.J. Growth, Luminescence, Selection Rules, and Lattice Sums of SiC with Wurtzite Structure. Phys. Rev. 143 (1966) 526-536.
• Persson, C., U. Lindefelt, Relativistic band structure calculation of cubic and hexagonal SiC polytypes. J. Appl. Phys. 82, 11 (1997), 5496-5508.
• Persson, C., U. Lindefelt, Dependence of energy gaps and effective masses on atomic positions in hexagonal SiC. J. Appl. Phys. 86, 11 (1997), 5036-5039.
• Persson, C., U. Lindefelt, and B. E. Sernelius. Band gap narrowing in n-type and p-type 3C-, 2H-, 4H-, 6H-SiC, and Si.J. Appl. Phys. 86, 8 (1999), 4419-4427.
• Persson, C., U. Lindefelt, and B. E. Sernelius. Doping-induced effects on the band structure in n-type 3C-, 2H-, 4H-, 6H-SiC, and Si. Phys. Rev. B 60, (1999) 16479-16493.
• Philipp, H.R., Taft, E.A. Silicon Carbide - A High Temperature Semiconductor , Eds. O'Connor, J.R., Smiltens, J., Pergamon Press, Oxford, London, New York, Paris 1960, 366.
• Powell, J.A. J. Opt. Soc. Am. 62 (1972) 341.
• Rutsch, G., R.P. Devaty, W.J. Choyke, D.W. Langer, L.B. Rowland, Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T. J. Appl. Phys. 84, 4 (1998), 2062-2064.
• Raghunathan, R., Baliga, B.J., Role of defects in producing negative temperature dependence of breakdown voltage in SiC. Appl. Phys. Lett. 72, 24 (1998), 3196-3198.
• Raghunathan, R., Baliga, B.J., Solid State Electronics 43 (1999), 199-211.
• Ravindra, N.M, Srivastava, V.K. Phys. Chem. Solids 40 (1979) 791.
• Ruff, M., H. Mitlehner, R. Helbig, IEEE Trans. Electron Dev. 41, 6 (1994), 1040-1054.
• Sankin V. I., Lepneva A. A. Electron Saturated Vertical Velocities in Silicon Carbide Polytypes. Mater. Sci. Forum. 338-342 (2000), 769-771.
• Sasaki, K., Sakuma, E., Misawa, S., Yoshida, S., Gonda, S. Appl. Phys. Lett. 45 (1984) 72.
• Scace, R.I., Slack, G.A. Silicon Carbide - A High Temperature Semiconductor , Eds. O'Connor, J.R., Smiltens, J., Pergamon Press, Oxford, London, New York, Paris 1960, 24.
• Scace, R.I., Slack, G.A. J. Chem. Phys. 42 (1965) 805.
• Shaffer, P.T.B., J. Am. Ceram. Soc. 48, 11 (1965), 601.
• Shaffer, P.T.B., Appl. Opt. 10 (1971), 1034-1036.
• Shaffer, P.T.B., R.G. Naum, J. Opt. Soc. Am. 59, 11 (1969), 1498.
• Shatter, P.T.B., in Plenum Press Handbook of High Temperature Materials, N1 (1964), Plenum Press., New York, 107.
• Shatter, P.T.B., Naum, R.G. J. Opt. Soc. Am. 59 (1969) 1498.
• Shatter, W.J., H.S. Kong, G.H. Negley, J.W. Palmour, Inst. Phys. Conf. Ser. 137 (1994), 155.
• Shinohara, M., M. Yamanaka, H. Daimon, E. Sakuma, H. Okumura, S. Misawa, K. Endo, S. Yoshida, Jpn. J. Appl. Phys. 27, 3 (1988), L433-L436.
• Slack, G.A, Bartram, S.F.Thermal expansion of some diamondlike crystals. J. Appl. Phys. 46 (1975) 89.
• Slack, G.A. J. Appl. Phys. 35 (1964) 3460.
• Solangi, A., M.I. Chaudry, Absorption coefficient of beta--SiC grown by chemical vapor deposition. J. Mater. Res. 7 (1992), 539-541.
• Son, N.T., O. Kordina, A.O. Konstantinov, W.M. Chen, E. Sorman, B. Monemar, E. Janzen, Electron effective masses and mobilities in high-purity 6H--SiC chemical vapor deposition layers. Appl. Phys. Lett. 65, 25 (1994), 3209-3211.
• Son, N.T., W.M. Chen, O. Kordina, A.O. Konstantinov, B. Monemar, E. Janzen, D.M. Hnfman D Volm M. Drechsler., R.K. Mever. Electron effective masses in 4H SiC. Appl. Phvs. Lett. 66, 9 (1995), 1074-1076.
• Son, N.T., P. N. Hai, W. M. Chen, C. Hallin, B. Monemar, and E. JanzenHole effective masses in 4H SiC. Phys. Rev. B 61,16 (2000) R10544-R10546.
• Son, N. T., Hallin, C., Janzen, E. Hole effective masses in 6H-SiC from optically detected cyclotron resonance. Phys. Rev. B66, (2002) 045304-045308.
• Sridhara, S.G., R.P. Devaty, W.J. Choyke, Absorption coefficient of 4H silicon carbide from 3900 to 3250 [A-ring]. J. Appl. Phys. 84, 5 (1998), 2963-2964.
• Suzuki, A., Matsunami, H., Tanaka, T. J. Electrochem. Soc. 124 (1977) 241.
• Tairov, Y.M., Vodakov, Y.A. Topics in Applied Physics, vol. 17 Electroluminescence, Pankove, J.I. (ed.), Berlin, Heidelberg, New York: Springer-Verlag 1977, 31.
• Tairov, Yu.M., V.F. Tsvetkov, in Handbook on Electrotechnical Materials Eds. Koritskii, Yu.V., V.V. Pasynkov, B.M. Tareev, Vol.3, Sec.19, "Semiconductor Compounds A^IV B^IV", Energomashizdat, Leningrad, 1988, 446-471. (in russian)
• Tajima, Y., Kijima, K., Kingery, W.D. J. Chem. Phys. 77 (1982) 2592.
• Taylor, A., Jones, R.M. in Silicon Carbide - A High Temperature Semiconductor , Eds. O'Connor, J.R., Smiltens, J., Pergamon Press, Oxford, London, New York, Paris 1960, 147.
• Troffer, T., G. Pensi, A. Schoner, A. Henry, C. Hallin, O. Kordina, E. Jansen, Abstracts of International Conference on SiC, III-Nitrides and Related Materials , Aug. 31-Sept. 5, 1997, Stockholm, Sweden, 1997, 601-602.
• Truell, R., C. Elbaum, B.B. Chick, Ultrasonic Methods in Solid State Physics , Academic Press, London, 1969.
• Van Daal, HJ., Knippenberg, W.F, Wasscher, J.D. J. Phys. Chem. Solids 24 (1963), 109-127.
• Vassilevski K.V., Dmitriev V.A., Zorenko A.V. Silicon Carbide Diode Operating at Avalanche Breakdown Current Density of 60 kA/cm². Journal of Appl. Phys., 74(12) (1993), 7612-7614.
• Vassilevski, K. V., K. Zekentes, A. V. Zorenko, L. P. Romanov. Experimental determination of electron drift velocity in 4H-SiC P⁺-N-N⁺ avalanche diodes, IEEE Electron Device Lett., 21 (Oct. 2000) 485-487.
• Vassilevski, K. V., K. Zekentes, A.B. Horsfall, C. M. Johnson, N. G. Low Voltage Silicon Carbide Zener Diode. Abstracts of International Conference on SiC and Related Materials, Lyon, France, October 5-10, 2003, Program with extended abstracts, MoP2-5. To be published in ICSCRM-2003 Proceedings.
• Vodakov, Yu.A., Mokhov, E.N. Silicon Carbide , 1973, Eds. Marshall, R.C., Faust, J.W., Ryan, C.E., Univ. of South Carolina Press,Columbia, S.C. 1974, 508.
• Vodakov, Yu.A., Mokhov, E.N., Reifman, M.B. Sov. Phys. Solid State 8 (1966) 1040.
• Vodakov, Yu.A., Demakov, K.D., Kalinina, E.V., Mokhov, E.N., Ramm, M.G., Kholuyanov, G.F. Electrical properties of a p-n-n[sup + ] structure formed in silicon carbide by implantation of aluminum ions. Sov. Phys. Semicond. 21,9 (1987) 1017-1020.
  
• von Muench, W., E. Pettenpaul, J. Appl. Phys 48 (1977), 4823-4825.
• von Muench W. v., E. Pettenpaul, Saturated Electron Drift Velocity in 6H Silicon Carbide. J. Appl. Phys., 48 (1977) 4823-4825 .
• Yamanaka, M., H. Daimon, E. Sakuma, S. Misawa, S. Yoshida, Temperature dependence of electrical properties of n- and p-type 3C-SiC. J. Appl. Phys. 61, 2 (1987a), 599-603 .
• Yamanaka, M., H.H. Daimon, E. Sakuma, S. Misawa, K. Endo, S. Yoshida, Jpn. J. Appl. Phys. 26, 5 (1987b), L533-L535.
• Zanmarchi, G. Proc. 7th Int. Conf. Semicond., Paris 1964, M. Hulin ed., Dunod, Paris 1964, 57.
• Zanmarchi, G. J. Phys. Chem. Solids 29 (1968) 1727.