Dislocation Glide

			Remarks	Referens
Dislocation glide velocity v = aσ exp(-Ev/kT) m/s	, where	a 3 x 10-3 m2s/kg; Ev=2.2 eV	10 < σ < 100 MPa Si (x=0); bulk	Hull (1995)
		a 3 x 10-3 m2s/kg; Ev=1.6 eV	10 < σ < 100 MPa Ge (x=1); bulk

To define the glide velocities in strained Si_1-xGe_x layers, normalized glide velocity v* has been introduced:
v*= [v_m ·exp(-0.6x/kT)]/σ_ex
This equation normalizes the measured glide velocities v_m to an equivalent velocity at an excess stress σ_ex of 1 Pa in pure Si.

		Remarks	Referens
v*= exp(-[7.8 + b/kT])	m2/kg	uncapped SiGe; b = 2 eV:	Hull (1995)
v*= exp(-[10.4 + b/kT])	m2/kg	Si-capped SiGe; b = 2 eV

	Si1-xGex. Normalized dislocation velocities v* for uncapped and capped (0.3 µn, Si) Si1-xGex/Si(001) heterostructures vs. 1/kT Hull (1995)
	Si1-xGex. Measured dislocation propagation velocities vm in Si1-xGex/Si(001) heterostructures vs. excess stress. 550 oC Hull (1995)