Levon V. Asryan, Ph.D., Dr.Sci.
| Born: | 1963 in Talin, Armenia |
| 2000-present | Visiting Senior Researcher
Department of Electrical and Computer Engineering State University of New York at Stony Brook Stony Brook, NY, USA |
| 1999-present | Senior Researcher
Laboratory of Theoretical Bases of Microelectronics Ioffe Physico-Technical Institute |
| 1994-98 |
Researcher
Laboratory of Theoretical Bases of Microelectronics Ioffe Physico-Technical Institute |
| 1992-94 |
Researcher Laboratory of Physical and Functional Microelectronics Ioffe Physico-Technical Institute |
| 1989-91, 1985 | Junior Researcher
Laboratory of Physics of Semiconductor Materials and Devices Department of Radiophysics Yerevan State University, Yerevan, Armenia |
| 2002 | Doctor of Physical and Mathematical Sciences degree
(Dr.Sci.)
Ioffe Physico-Technical Institute, St. Petersburg, Russia Thesis: "Theory of threshold characteristics of semiconductor quantum dot lasers" |
| 1988 | Ph.D. degree in Physics and Mathematics
Ioffe Physico-Technical Institute, St. Petersburg, Russia Thesis: "Trapping and separation of non-equilibrium carriers in inhomogeneous semiconductors and in p-n junctions" |
| 1985 |
M.Sc. degree in Radiophysics and Electronics
(Diploma With Honours) Yerevan State University, Yerevan, Armenia Thesis: "Photoconductivity of inhomogeneous semiconductor solid solutions" |
| 1985-1988 |
Graduate student
Ioffe Physico-Technical Institute, St. Petersburg, Russia |
| 1980-1985 |
Student
Department of Radiophysics, Yerevan State University |
| 2001 |
State Prize of the Russian Federation in Science and Technology
(the highest Russian Scientific award) was awarded to Zh.I. Alferov, L.V. Asryan, D. Bimberg, P.S. Kop'ev, N.N. Ledentsov, V.A. Shchukin, R.A. Suris, and V.M. Ustinov "For fundamental investigations of the formation processes and the properties of heterostructures with quantum dots and the development of lasers based on these structures" |
| 2001 |
Winner of the first IEEE Journal of Quantum Electronics
Best Paper Award for the paper
"Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation". IEEE J. Quantum Electron., vol. 37, no. 5, pp. 676-683, May 2001. |
| 2000 |
Laureate of the Best-Work Prize
of the Division of Solid State Electronics
of the Ioffe Physico-Technical Institute
for a series of papers
"Threshold and high power characteristics of InGaAsP/InP multiple quantum well lasers" |
| 1998 |
Winner of the Best-Work Prize
of the Division of Solid State Electronics
of the Ioffe Physico-Technical Institute and Laureate of the best-work prize of the Ioffe Physico-Technical Institute for a series of papers "Theory of the threshold current of a semiconductor quantum dot laser" |
| 1983-1985 | Personal Stipend With Honours from the U.S.S.R. Ministry of Education |
| September 2000 - present |
Visiting Senior Researcher Electrical & Computer Engineering Center for Advanced Sensor Technology State University of New York Stony Brook, New York, USA |
| October 1999 - January 2000 |
Visiting Senior Researcher Institut fuer Festkoerperphysik Technische Universitaet Berlin, Germany |
| August 1996 |
Visiting Researcher International Centre for Theoretical Physics Trieste, Italy |
| 1995-98 |
Nortel Networks "Simulation of threshold and high power characteristics of multiple quantum well lasers" |