Proc. of the 4th Moscow Int. ITEP School of Physics, Zvenigorod, Moscow, Feb.5-16, pp.299-303, 2001
Growth of SiC nanoclusters on Si surface using Molecular beam epitaxy
D.V. Kulikov, K.L. Safonov, Yu.V. Trushin, J. Pezoldt

The growth of SiC clusters on a Si(111) surface has been investigated theoretically. The formation and growth of SiC clusters on a Si surface stimulated by the deposition of elemental carbon onto Si(111) using molecular beam expitaxy, have been studied by applying the kinetic equation method. The simulated cluster size distribution function obtained within this method appeared to be in reasonable agreement with experimental data.

Proc. of SPIE, v.4627, 2002, pp.165-169
Nucleation of SiC on Si and their relationship to nano-dot formation: II. Theoretical investigation
K.L. Safonov, D.V. Kulikov Yu.V. Trushin, Joerg Pezoldt

The processes of SiC clusters growth on Si(111) surface has been investigated theoretically. The SiC cluster formation and growth on Si surface stimulated by deposition of elemental carbon onto Si(111) with molecular beams have been studied by applying the kinetic equations (co-called rate equations) method. The simulated cluster size distribution function obtained within this method appeared to be in reasonable agreement with the experimental data. Obtained cluster capture rates agree with KMC investigations.

Proc. of SPIE, v.5127, 2003, pp.128-131
Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process
K.L. Safonov, D.V. Kulikov, Yu.V. Trushin, J. Pezoldt

Rate equations approach of computer simulation has been applied to investigate the SiC clusters nucleation and growth on Si surface during molecular beam epitaxy. Cluster surface densities have been obtained for a range of temperatures. The temperature influence on the cluster density, including the surface phase transition (which occurs with simultaneous surface structure reconstruction), has been determined. The results obtained bythe application of the suggested physical model have appeared to be in the reasonable agreement with experimental data.

Mater. Sci. Forum, v.433-436, 2003, pp.591-594
Modelling the formation of nano-sized SiC on Si
K.L. Safonov, A.A. Schmidt, Yu.V. Trushin, D.V. Kulikov, J. Pezoldt

Tech. Phys. Lett., v.29(8), 2003, pp.663-665
The transition from 2D to 3D nanoclusters of silicon carbide on silicon
Yu.V. Trushin, K.L. Safonov, O. Ambacher, J. Pezoldt

Phys. Stat. Sol. (a), v. 201, No. 2, 2004, pp. 333-337
Kinetic Monte Carlo simulation of SiC nucleation on Si (111)
A.A. Schmidt, K.L. Safonov, Yu.V. Trushin, V. Cimalla, O. Ambacher, J. Pezoldt