Defects in semiconductors
The Group has a broad experience on structural defects and their impact on electrical properties of semiconductor materials, among them growth and processing - induced defects, impurities and impurity clusters in silicon, germanium and silicon-germanium alloys as well a group-III nitrides and related compound materials, defect formation and interaction processes during heat treatment, radiation damage and transmutation reactions.
Contact informationTel.: +7 (812) 292 7952E-mail: emtsev@mail.ioffe.ru Contact person: Vadim Emtsev Laboratory of nonequilibrium processes in semiconductors Ioffe Institute, Russian Academy of Sciences Politekhnicheskaya 26, St.Petersburg, 194021 Russia |