Current research focus
The main subject of our studies is the interaction of impurities in semiconductors and how it affects semiconductors properties. We develop our research in two ways: experimental and theoretical. Our experimental studies are mostly concerned on photoluminescence spectroscopy of doped semiconductor structures. In our theoretical research we widely use a high performance numerical simulation using multi-task programming when possible. The group leader Pavel Petrov is a lecturer at Polytechnic University participating in "Smart Nanostructures and Condensed Matter Physics" master's program.
Recent experimental results
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P. V. Petrov, I. A. Kokurin, Yu. L. Ivánov, G. E. Cirlin, V. E. Sedov and N. S. Averkiev,
Fine Structure of Levels and Piezospectroscopy of A+ Centers in GaAs/AlGaAs Quantum Wells,
Physics of the Solid State 60, 339 (2018)
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P. V. Petrov, I. A. Kokurin, G. V. Klimko, S. V. Ivanov, Yu. L. Ivánov, P. M. Koenraad, A. Yu. Silov, and N. S. Averkiev,
Optical spectroscopy of single beryllium acceptors in GaAs/AlGaAs quantum well,
Phys. Rev. B 94, 115307 (2016)
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P. V. Petrov, Yu. L. Ivanov, and N. S. Averkiev,
Spin and charge effects due to positively charged acceptors in GaAs/AlGaAs quantum wells,
Low Temperature Physics 41, 90 (2015)
Recent theoretical results
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N.A. Bogoslovskiy, P.V. Petrov, N.S. Averkiev,
The Impurity Magnetic Susceptibility of Semiconductors in the Case of Direct Exchange Interaction in the Ising Model,
Physics of the Solid State 61, 2005(2019)
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N.A. Bogoslovskiy, P.V. Petrov, N.S. Averkiev,
Effect of Charge Carrier Relaxation on Donor-Acceptor Recombination Spectra Taking into Account Coulomb Correlations,
Low Temperature Physics 45, 146 (2019)
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N.A. Bogoslovskiy, P.V. Petrov, Y.L. Ivánov, K.D. Tsendin, N.S. Averkiev,
Two components of donor-acceptor recombination in compensated semiconductors: Analytical model of spectra in the presence of electrostatic fluctuations,
Phys. Rev. B 98, 075209 (2018)
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