See also our research on Deep centers in silicon: physics and technology
Recent Publications
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Yu.A. Astrov, A.N. Lodygin, L.M. Portsel,
Comparative study of noise in low-current Townsend discharge in nitrogen and argon,
Phys. Rev. E 95, 043206 (2017)
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Yu.A. Astrov, A.N. Lodygin, L.M. Portsel,
Townsend discharge in nitrogen at low temperatures: enhanced noise and instability due to electrode phenomena,
J. Phys. D: Appl. Phys. 49, 095202 (2016)
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A.N. Lodygin, Yu.A. Astrov, L.M. Portsel, E.V. Beregulin,
Dynamics of the Townsend discharge in argon,
Technical Physics 60, 660 (2015)
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Yu.A. Astrov, A.N. Lodygin, L.M. Portsel,
Self-organized patterns in successive bifurcations in planar semiconductor-gas-discharge device,
Phys. Rev. E 91, 032909 (2015)
A book
V.M. Marchenko, H.-G. Purwins, L.M. Portsel, Yu.A. Astrov,
Semiconductor-Gas-Discharge Device for Fast Imaging in the Infrared: Physics, Engineering and Applications,
Shaker Verlag GmbH. 176 pages, ISBN: 978-3-8440-0667-4, (2016)
Contact information
Yu. A. Astrov, e-mail: yuri.astrov@mail.ioffe.ru
L. M. Portsel, e-mail: leonid.portsel@mail.ioffe.ru
A. N. Lodygin, e-mail: a.lodygin@mail.ioffe.ru
Phone: +7 (812) 247 99 66
Fax: +7 (812) 247 10 17
Laboratory of nonequilibrium processes in semiconductors
Ioffe Institute, Russian Academy of Sciences
Politekhnicheskaya 26,
St.Petersburg, 194021 Russia
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