Prof. Dr. Irina Yassievich

Ирина Николаевна Яссиевич
Профессор, доктор физико-математических наук
Prof. Dr. Irina Yassievich

We are deeply saddened to announce that Irina Nikolaevna Yassievich passed away on July 30, 2020. This is a great loss for her family, friends and the entire scientific community.


Research

  • Theory of semiconductors
  • Optical phenomena in nanostructures
  • Non-radiative recombination
   For the full list of publications, see Researher ID.
   For the the list of recent preprints, see ArXiv.

Recent publications

  • I. D. Avdeev, A. V. Belolipetskiy, N. N. Ha, M. O. Nestoklon, I. N. Yassievich,
    Absorption of Si, Ge, and SiGe alloy nanocrystals embedded in SiO2 matrix, Journal of Applied Physics 127, 114301 (2020)
  • M. O. Nestoklon, I. D. Avdeev, A. V. Belolipetskiy, I. Sychugov, F. Pevere, J. Linnros, I. N. Yassievich,
    Tight-binding calculations of the optical properties of Si nanocrystals in a SiO2 matrix, Faraday Discuss. 222, 258 (2020)
  • A. V. Belolipetskiy, M. O. Nestoklon, I. N. Yassievich,
    Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix, J. Phys.: Condens. Matter 31, 385301 (2019)
  • M. O. Nestoklon, S. V. Goupalov, R. I. Dzhioev, O. S. Ken, V. L. Korenev, Yu. G. Kusrayev, V. F. Sapega, C. de Weerd, L. Gomez, T. Gregorkiewicz, Junhao Lin, Kazutomo Suenaga, Yasufumi Fujiwara, L. B. Matyushkin, and I. N. Yassievich,
    Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals, Phys. Rev. B 97, 235304 (2018)
  • A.V. Belolipetskiy, M.O. Nestoklon, I.N. Yassievich,
    Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method, Semiconductors 52, 1264 (2018)
  • E.M.L.D. de Jong, H. Rutjes, J. Valenta, M.T. Trinh, A.N. Poddubny, I.N. Yassievich, A. Capretti, T. Gregorkiewicz,
    Thermally stimulated exciton emission in Si nanocrystals, Light: Sci. Appl. 7, 17133 (2018)
  • E.M.L.D. de Jong, W.D.A.M. de Boer, I.N. Yassievich, T. Gregorkiewicz,
    Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix, Phys. Rev. B 95, 195312 (2017)
  • A.V. Gert, M.O. Nestoklon, I.N. Yassievich,
    Effective Hamiltonian of silicene in the presence of electric and magnetic fields, J. Exp. Theor. Phys. 123, 851 (2016)
  • A.V. Gert, I.N. Yassievich,
    Self-trapped excitons on the surface of Si nanocrystals in SiO2, physica status solidi (b) 252, 130 (2015)
  • A.V. Gert, I.N. Yassievich,
    Radiation spectrum of hot excitons in si nanocrystals, Lith. J. Phys. 55, 292 (2015)
  • A. A. Prokofiev, A. N. Poddubny, and I. N. Yassievich,
    Phonon decay in silicon nanocrystals: Fast phonon recycling, Phys. Rev. B 89, 125409 (2014)
  • W. D. A. M. de Boer, E. M. L. D. de Jong, D. Timmerman, T. Gregorkiewicz, H. Zhang, W. J. Buma, A. N. Poddubny, A. A. Prokofiev, and I. N. Yassievich,
    Carrier dynamics in Si nanocrystals in an SiO2 matrix investigated by transient light absorption, Phys. Rev. B 88, 155304 (2013)
  • O.B. Gusev, A.N. Poddubny, A.A. Prokofiev, I.N. Yassievich,
    Light emission from silicon nanocrystals, Semiconductors 47, 183 (2013)
  • W. D. A. M. de Boer, D. Timmerman, T. Gregorkiewicz, H. Zhang, W. J. Buma, A. N. Poddubny, A. A. Prokofiev, and I. N. Yassievich,
    Self-trapped exciton state in Si nanocrystals revealed by induced absorption, Phys. Rev. B 85, 161409(R) (2012)
  • A. S. Moskalenko, J. Berakdar, A. N. Poddubny, A. A. Prokofiev, I. N. Yassievich, and S. V. Goupalov,
    Multiphonon relaxation of moderately excited carriers in Si/SiO2 nanocrystals, Phys. Rev. B 85, 085432 (2012)