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A.V. Gert, A.V.Belolipetskii, I.D. Avdeev,
Density of electronic states in silicon nanocrystals embedded in a SiO2 matrix and passivated by hydrogen,
J. Opt. Technol. 91, 383 (2024)
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L.A.Sokura, V.N.Nevedomskiy, M.V. Baidakova, A.A. Levin, A.V. Belolipetsky, I.N. Yassievich, A.V. Ershov, N.A. Bert,
Microstructure and morphology of 2D arrays of Ge quantum dots in a Si/Al2O3 matrix,
J. Phys.: Conf. Ser. 1697, 012135 (2020)
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I. D. Avdeev, A. V. Belolipetskiy, N. N. Ha, M. O. Nestoklon, I. N. Yassievich,
Absorption of Si, Ge, and SiGe alloy nanocrystals embedded in SiO2 matrix,
Journal of Applied Physics 127, 114301 (2020)
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M. O. Nestoklon, I. D. Avdeev, A. V. Belolipetskiy, I. Sychugov, F. Pevere, J. Linnros, I. N. Yassievich,
Tight-binding calculations of the optical properties of Si nanocrystals in a SiO2 matrix,
Faraday Discuss. 222, 258 (2020)
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A.V. Belolipetskiy, M.O. Nestoklon, I.N. Yassievich,
Tight-binding calculations of SiGe alloy nanocrystals in SiO2 matrix,
J. Phys.: Condens. Matter 31, 385301 (2019)
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A.V. Belolipetskiy, M.O. Nestoklon, I.N. Yassievich,
Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method,
Semiconductors 52, 1264 (2018)
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D.A. Grachev, A.V. Ershov, A.V. Belolipetsky, L.V. Krasilnikova, A.N. Yablonskiy, B.A. Andreev, and O.B. Gusev,
Si and Ge nanocrystals in resonator multilayer structures,
physica status solidi (a) 213, 2867 (2016)
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O.B. Gusev, A.V. Belolipetskiy, I.N. Yassievich, A.V. Kukin, E.E. Terukova, and E.I. Terukov,
Lifetime of excitons localized in Si nanocrystals in amorphous silicon,
Semiconductors 50, 627 (2016)
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Alexey Belolipetskiy, Oleg Gusev, and Irina Yassievich,
Carriers Transport in Amorphous Hydrogenated Silicon with Silicon Nanocrystals,
J. Nanoelectron. Optoelectron. 9, 750 (2015)
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