SiC - Silicon Carbide

Recombination Parameters

      Remarks Referens
4H-SiC. Pure
n-type material    		 The longest lifetime of holes tp ~= 6.0 x 10-7 c   300 K  
Diffusion length Lp = (Dp x tp)1/2 ~= 12 μm c 300 K  
4H-SiC. Pure
p-type material 		The longest lifetime of electrons tn ~= 10-9 c 300 K  
Diffusion length Ln = (Dn x tn)1/2 ~= 1.5 μm 300 K  
4H-SiC Surface Recombinaton Velocity 103 - 105 300 K Galeskas et al. (1997);
Grivickas et al. (1997);
Neudeck & Fazi (1997);
Kimoto et al. (1999)
4H-SiC Radiative recombination coefficient B 1.5 x 10-12 cm3/s 300 K, estimation Galeskas et al. (1997)
4H-SiC Auger coefficient Cn 5.0 x 10-31 cm6/s 300 K Galeskas et al. (1997)
  Auger coefficient Cp 2.0 x 10-31 cm6/s 300 K Galeskas et al. (1997)
  Auger coefficient C = Cn + Cp 7.0 x 10-31 cm6/s 300 K Galeskas et al. (1997)
         
6H-SiC. Pure
n-type material    		 The longest lifetime of holes tp ~= 4.5 x 10-7 c   300 K  
Diffusion length Lp = (Dp x tp)1/2 ~= 10 μm c 300 K  
6H-SiC. Pure
p-type material 		The longest lifetime of electrons tn ~= 10-9 c 300 K  
Diffusion length Ln = (Dn x tn)1/2 ~= 1 μm 300 K  
6H-SiC Surface Recombinaton Velocity 104 - 105 300 K  
6H-SiC Radiative recombination coefficient B ~=1.5 x 10-12 cm3/s 300 K. Galeskas et al. (1997)
The values measured
in 4H-SiC can be used
for estimations.
6H-SiC Auger coefficient Cn ~=5.0 x 10-31 cm6/s 300 K
  Auger coefficient Cp ~=2.0 x 10-31 cm6/s 300 K  
  Auger coefficient C = Cn + Cp ~=7.0 x 10-31 cm6/s 300 K  

4H-SiC. Hole lifetime tp vs. reciprocal temperature measured in the base of a high-voltage 4H-SiC rectifier diode.
Ivanov et al. (1999)
4H-SiC. Hole lifetime tp vs. reciprocal temperature measured using the photoluminescence decay technique.
Kordina et al. (1996)
4H-SiC. Reciprocal effective hole lifetime 1/t vs. perimeter-to-area P/A ratio for 4H-SiC p-n structure.
The slope of the dependence defines the surface recombination velocity according to the equation
1/t= 1/tp + s x (A/P),
where tp is the volume hole lifetime.
Neudeck & Fazi (1997)
4H-SiC. The carriers lifetime vs. carrier density.
Solid curve is calculated to fit experimental data:
t = 2.6 x 10-7 s;
B = 1.5 x 10-12 cm3/s;
C = 7 x 10-31 cm6/s.
Galeskas et al. (1997)
6H-SiC. Reciprocal effective hole lifetime 1/t vs. perimeter-to-area P/A ratio for 6H-SiC p-n structure.
The slope of the dependence defines the surface recombination velocity according to the equation
1/t= 1/tp + s x (A/P),
where tp is the volume hole lifetime.
Kimoto et al. (1999)