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Scientific Program
Monday, July 11 |
900- 915 | Opening Introduction.
Evgeni Gusev / Vladimir Osipov. Opening remarks. | |
1. High-K Technology Session Chairs: D. Gilmer and T.-C. Chen |
915-1000 | Tze-Chiang Chen, IBM T.J. Watson Research
Center, Yorktown Heights, NY Keynote Presentation: High-k/Metal Gate - Mitigating
CMOS Power Crisis | 1000- 1030 | Masaaki
Niwa, IMEC Team at Semiconductor Company of Matsushita Electric Industrial Co., Ltd.,
Leuven, Belgium Effect of integration and processing on high-k gate stack |
1030- 1100 | Coffee
break | 1100- 1130
| David Gilmer, Freescale Semiconductors, Austin, USA Effects of integration
and processing on Metal-gate/High-K defects and reliability | 1130-
1200 | Johan Klootwijk, Philips Research Laboratories, Eindhoven,
The Netherlands Characterization of ALD high-k dielectric layers in deep trenches
for high capacity density applications | 1200-
1230 | Prashant Majhi, International SEMATECH/INTEL, Austin, USA A
preliminary understanding of processing-nanostructure-property inter-relationships
in High-k/Metal gate stacks | 1230-
1330 | Lunch |
| 2. Defects in High-k Dielectrics: CharacterizationSession
Chairs: E. Vogel and T.P. Ma | 1400-
1430 | Douglas Buchanan, University of Manitoba, Winnipeg, Canada The
scaling of deep-sub-tenth-micron CMOS technology: Metal gates, high-k dielectrics
and electrically active defects on an atomic scale | 1430-
1500 | T.P. Ma, Yale University, New Haven, USA Inelastic electron
tunneling spectroscopy study of traps in high-k gate dielectrics |
1500- 1530 | Gilles Reimbold, LETI-CEA, Grenoble,
France Characterization and modeling of defects in high-k layers through fast electrical
transients measurements | 1530-
1600 | Coffee break |
1600- 1630 | Eric Vogel,
NIST, Gaithersburg, USA Characterization of electrically active defects in high-k
gate dielectrics using charge pumping | 1630- 1700
| Luigi Pantisano, IMEC, Leuven, Belgium Impact of the high-k properties
(and defects) on the MOSFET electrical characteristics |
1730- 2100 | Monday Evening:
Boat Trip on Neva River and Reception |
Tuesday, July 12 | | 3. High-K Processing
and DefectsSession Chairs: B. Lee and P. McIntyre |
900 - 1300 | Excursion
around centre of St Petersburg and to the Hermitage | 1300-
1400 | Lunch |
1400 - 1430 | Paul McIntyre,
Stanford University, USA Temperature-dependent structural evolution and defects
in metal oxide-based High-k gate dielectrics. (with H. Kim, D.Chi, K.C. Saraswat,
C. M. Perkins, B.B. Triplett and S. Stemmer). | 1430-
1500 | Kaupo Kukli, University of Tartu, Estonia and University
of Helsinki, Finland Disorder-induced trap densities in atomic layer deposited
high-permittivity metal oxides | 1500-
1530 | Robert Wallace, University of Texas, Dallas, USA Interdiffusion
studies of high-k gate stack constituents with silicates, aluminates and oxides |
1530- 1600 | Coffee
break | 1600- 1630 |
Andrei Zenkevich, Moscow Engineering Physics Institute, Russia XPS/LEIS study of
high-k rare earth (Lu, Yb) oxides and silicates on Si: the effect of annealing on
microstructure evolution. | 1630- 1700 |
Byoung Lee, SEMATECH/IBM, Austin, USA Transient charging effects and its implication
to the reliability of high-k dielectrics | 1700-
1730 | Alex Demkov, University of Texas, Austin, USA Atomic
design of advanced gate stacks for CMOS technology |
Wednesday, July 13 | | 4. High-K Theory
Session Chairs: S. Pantelides and J. Robertson | 900
- 930 | John Robertson, University of Cambridge, UK Defect energy
levels in high-k gate oxides | 930 - 1000 | Vincenzo
Fiorentini, University of Cagliari, Monserrato, Italy Electronic structure of
native defects in high-k oxides: an exploration within self-interaction corrected
DFT (with Giorgia M. Lopez, and Alessio FIlippetti) |
1000- 1030 | Alexander Bagatur'yants, Photochemistry
Center, Russian Academy of Sciences, Moscow, Russia Ab initio cluster calculations
of oxygen vacancies in high-k dielectrics | 1030-
1100 | Coffee break |
1100- 1130 |
Sokrates Pantelides, Vanderbilt University, Nashville, USA Defect-related issues
in high-k dielectrics | 1130- 1200 | Jacob
Gavartin, University College London, UK Modeling residual charge in high-k dielectrics
and at their interface with silicon | 1200-
1230 | Wanda Andreoni/A. Curioni, IBM Zurich Research Laboratory,
Switzerland Effects of Nitrogen and Hafnium on the Dielectric, Structural and Electronic
Properties of Silicon Dioxide (with C.A. Pignedoli) | 1230-
1330 | Lunch |
| 5. Electrically Active DefectsSession Chairs: M. Fanciulli and A. Dimoulas
| 1400 - 1430 | Andre
Stesmans, Katholieke University Leuven, Belgium Probing of point defects and traps
in stacks of ultrathin high-k metal oxides on (100)Si by electron spin resonance:
interfaces, interlayers, and N incorporation | 1430-
1500 | Gennadi Bersuker, SEMATECH, Austin, USA Mechanism of
charge trapping reduction in scaled high-k gate stacks |
1500- 1530 | Athanasios Dimoulas, Institute of
Materials Science, NCSR "Demokritos", Athens, Greece Interface and bulk
semiconductor defects in high-k/Ge structures | 1530-
1600 | Coffee break |
1600- 1630 | Jurgen Von
Bardeleben, University of Paris, France Defect analysis in Si/High k systems by
EPR and IBA (with J.L.Cantin and J.J.Ganem) | 1630-
1700 | Marco Fanciulli, National Institute for the Physics of
Matter (INFM), Milan, Italy Defects at the high-k/semiconductor interfaces investigated
by spin-dependent spectroscopies | 1700-
1730 | Karol Frohlich, Slovak Academy of Science, Bratislava,
Slovak Republic Fixed oxide charge in MOCVD grown high-k gate stacks |
| (House of St Petersburg Scientists + guided tour
of the House) | Thursday,
July 14 | | 6. InterfacesSession Chairs:
A. Pasquarello and E. Garfunkel | 900 - 930 | Eric
Garfunkel, Rutgers University, Piscataway, USA Interface issues in high-k dielectric
and metal gate electrode gate stacks | 930- 1000 | Joerg
Osten, Institute for Semiconductor Devices and Electronic Materials, University of
Hannover, Germany Interface formation during epitaxial growth of binary metal oxide
on silicon | 1000- 1030 | Jim
Greer, National Microelectronics Research Center, Cork, Ireland Oxygen vacancies
at Si/SiO2 interfaces (w/ G. Bersuker & A. Korkin) | 1030-
1100 | Coffee break |
1100- 1130 | Alfredo
Pasquarello, EPFL-SB-ITP-CSEA, Lausanne, Switzerland Dielectric and infrared properties
of ultrathin SiO2 oxides on Si(100) | 1130- 1200 | Gianfranco
Cerofolini, ST Microelectronics, Catania, Italy The (100) surface of semiconductor
silicon (in practical conditions): Preparation, evolution, passivation |
1200- 1230 | Andrey Knizhnik, Kintech, Moscow,
Russia Modeling of structure of defects at high-k oxide / metal interfaces |
1230- 1330 | Lunch |
| 7. Processing, Characterization and DevicesSession
Chairs: M. Nafria and T. Gustafssona | 1400
- 1430 | Torgny Gustafsson, Rutgers University, Piscataway, USA Structure,
composition and order at interfaces of crystalline oxides and other high-k materials
on silicon | 1430- 1500 | Albena
Paskaleva, Bulgarian Academy of Sciences, Sofia The influence of defects on the
conduction mechanisms in thin high-k dielectrics |
1500- 1530 | Vladimir Gritsenko, Institute of
Semiconductor Physics, Novosibirsk, Russia Electronic structure of ZrO2 and HfO2
(w/ V. M. Tapilin, K. A. Nasyrov, C. W. Kim) | 1530-
1600 | Coffee break |
1600- 1630 | Montserrat Nafria, University Autonoma
Barcelona, Spain High-k gate stacks electrical characterization at the nanoscale
using Conductive-AFM | 1630- 1700 | Vladimir
Osipov, A.F. Ioffe Phys.-Technical Institute, St.Petersburg, Russia New type of
defects in nano-diamond structures | 1700-
1730 | Art Edwards, US Air Force Research Lab/Space Vehicle Division,
Albuquerque, USA On the importance of atomic packing in determining dielectric
permittivities ( with R. A. B. Devine, A. Pineda, and T. Busani) |
1730- 1800 | Closing remarks |
Poster Sessions | | Defect in High-K Dielectric |
P01 | S. Duenas1, H. Castan1,
H. Garcia1, J. Barbolla1, K. Kukli2,3, M. Ritala3
and M. Leskela3 Electrical defects on Atomic Layer Deposited HfO2
films on silicon: Influence of precursor chemistries and substrate treatment. 1
E.T.S.I. Telecomunicacion, Universidad de Valladolid, Spain. 2 Institute of Experimental
Physics and Technology, University of Tartu, Estonia 3 Department of Chemistry,
University of Helsinki, Finland | P02 | J. Felix1
, D. Fleetwood2 and E.P. Gusev3 Radiation effects in High-K gate stacks. 1
Sandia National Lab, USA 2 Vanderbilt University, Nashville, USA 3 IBM T.J.
Watson Research Center, Yorktown Heights, USA | P03 | A.
V. Shaposhnikov1, V. A. Gritsenko1 and V.G. Lifshits2 Electronic
structure of Gd2O3 from first-principle calculations. 1 Institute
of Semiconductor Physics, Novosibirsk, Russia 2 Institute for Automation and Control
Processes, Vladivostok, Russia | P04 | R.G. Useinov1,
G. I. Zebrev2 and V. V. Emelyanov1 Comparative analysis of
radiation hardness for SiO2 and High-K insulators. 1 Research Institute of Scientific
Instruments, Lytkarino, Moscow region, Russia 2 Moscow Engineering Physics Institute,
Russia | P05 | D. V. Gritsenko1,
S. S. Shaimeev1, V. V. Atuchin1, K. A. Nasyrov2 and
V. G. Lifshits3 Two band charge transport in Si/TiO2/Al structures. 1
Institute of Semiconductor Physics, Novosibirsk, Russia 2 Institute of Automation
and Electrometry, Novosibirsk, Russia 3 Institute for Automation and Control Processes,
Vladivostok, Russia | P06 | K.Ulutas and D.Deger Dielectric
polarization in anodic Al2O3 thin films. Istanbul University,
Turkey | P07 | G.A. Maximov, D.O. Filatov,
D.A. Antonov, A.V. Kruglov and D.A. Saveliev Investigation of the electronic properties
of thin dielectric films by Electric Force Microscopy Research and Educational
Center for Physics of Solid State Nanostructures University of Nizhny Novgorod, Russia |
P08 | V.E.Drozd, A.P.Baraban, I.O.Nikiforova. ML - ALD synthesis
of tailored high-K heterooxides. St Petersburg State University, Russia |
P09 | A.A. Balandin and W.L Liu Thermal and
electrical conduction in semiconductor quantum dot arrays: The role of defects and
interface scattering University of California - Riverside, USA |
P10 | Sergei Koveshnikov1,2, Wilman Tsai1 and Jack Lee2 Scaling
PVD HfO2, HfO2/TiO2 and Y2O3
films to <0.6 nm by using in-situ Ar/O2 plasma oxidation 1 Intel Corporation,
Santa Clara, USA. 2 University of Texas at Austin, USA |
P11 | Yu. Lebedinskii, A. Zenkevich, M. Pushkin, V. Troyan and V.Nevolin Can
LEIS spectra contain information on surface electronic structure ofhigh-k dielectrics? Moscow
Engineering Physics Institute, Russia | P12 | D. Shamiryan,
V. Paraschiv, M. Claes and W. Boullart Low substrate damage high-k removal after
gate patterning IMEC, Leuven, Belgium | P13 | Yu.Yu.
Lebedinskii1, A. Zenkevich1 and E.P. Gusev2 Monitoring of
Fermi level variations at metal/high-k interface with in situ XPS 1 Moscow Engineering
Physics Institute, Russia 2 IBM Semiconductor Research and Development Center,
New York, USA | | | |
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