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Scope - Novel high-dielectric constant materials and metal
gates
- Processing aspects
- Physical and structural properties
- Experimental
investigation of defects
- Theoretical investigations of high-k materials, interfaces
and defects
- Electrical characterization, reliability, defects and devices
- Radiation
effects
- Structural and electrical properties of interfaces with semiconductor
surfaces and gate electrodes
- Electronic structure
- Charge transport
in high-k structures and devices
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