GaInAs - Gallium Indium Arsenide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Two-dimensional electron and hole gas mobility in heterostructures
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

Mobility and Hall Effect

Electron drift (dashed curves) and Hall (solid curves) mobility vs. composition parameter x. T=300 K.
1, 1´ n=3·1015 cm-3;
2, 2´ n=4·1016 cm-3;
3 n=2.3·1017 cm-3.
For curve 3 electron and drift mobility values are practically equal.
Symbols are experimental data from several different papers.
Chattopadhyay et al. (1981)

For weakly n- doped GaxIn1-xAs at 300 K

µn=(40-80.7x+49.2x2) cm2/V·s
Electron Hall mobility versus temperature for Ga0.47In0.53As.
300K
Electron concentration no=3.5·1014 cm-3 at 300K.
Oliver, Jr. et al. (1981)
Electron Hall mobility in Ga0.47In0.53As at 77 K for different compensation ratios: θ=(Nd + Na )/n.
1 - θ=1,
2 - θ=2,
3 - θ=5,
4 - θ=10.
Symbols represent the experimental data from several works
Pearsall (1982)
Electron Hall mobility in Ga0.47In0.53As at 300 K for different compensation ratios: θ=(Nd + Na )/n.
1 - θ=1,
2 - θ=2,
3 - θ=5,
4 - θ=10.
Symbols represent the experimental data from several works
Pearsall (1982)
Hall factor for n-type Ga0.47In0.53As (y=1) versus temperature.
1 - no=1015 cm-3,
2 - no=1017 cm-3.
Pearsall (1982)

For weakly doped p-GaxIn1-xAs at T=300 K.

µp≤500 InAs; x=0 µp≤500
µp≤300 Ga0.47In0.53As; x=0.47 µp≤300
µp≤400 GaAs; x=1 µp≤400


Hole Hall mobility versus temperature for n-type Ga0.47In0.53As.
Hole concentration po=5.5·1015 cm-3 at T=300 K.
Novak et al. (1989)
Hole Hall mobility in Ga0.47In0.53As at t=77 K versus total impurity concentration Nd + Na.
Pearsall and Hirtz (1981)
Hole Hall mobility in Ga0.47In0.53As at t=295 K versus total impurity concentration Nd + Na.
Pearsall and Hirtz (1981)

Two-dimensional electron and hole gas mobility in heterostructures

Temperature dependence of the electron mobility µn (1) and sheet electron density n2DEG (2) in Ga0.47In0.53As/Al0.48In0.52As heterostructure.
Doping density in AlInAs layer is equal to 3·1017 cm-3.
T=300 K.
Matsuoka et al. (1990)
Hall electron mobilities of pseudomorphic GaxIn1-xAs/Al0.48In0.52As MODFET versus indium content at two temperature.
1 - 77 K
2 - 300 K
Pamulapati et al. (1990)

Measured Hall data from stress compensated GaxIn1-xAs/Al0.48In0.52As modulation-doped heterostructures
(Chin and Chang (1990))

  µn cm2/Vs 2DEG density, cm-2
x 300 K 77 K 300 K 77 K
0.25 14100 113000 1.71·1012 1.65·1012
0.20 15200 123100 1.84·1012 1.81·1012
0.15 15300 70700 1.84·1012 1.81·1012


Electron mobility versus 2D carrier density at 300K for pseudomorphic HEMT structures AlGaAs/GaxIn1-xAs/(Al)GaAs.
H- homogeneously doped structures,
P- planar doped structures.
For H1-15, H2-15, P-15 and 2P-15 samples x = 0.15.
For P-25 and 2P-25 x=0.25
Gaonach et al. (1990)

2DEG concentration and electron mobility of multiple (samples A,B, and C) and single (sample D) δ-doped GaAs/Ga0.75In0.25As/GaAs structures (Shieh et al. (1994)).

  n2DEG (1012 cm-2) µn (cm2/V·s)
  300 K 77 K 300 K 77 K
Sample A 4.3 2.5 3910 18400
Sample B 8.8 6.0 2710 6540
Sample C 6.2 4.1 4630 19100
Sample D 2.0 1.8 5600 22000


Hole Hall mobility (1) and 2DHG density (2) versus temperature for single strained GaAs/Ga0.8In0.2As/GaAs quantum well structure.
Fritz et al. (1986)
Hole Hall mobility at 76 K versus 2D carrier density for 90 A -thick GaAs/Ga0.8In0.2As/GaAs single strained quantum well.
Fritz et al. (1986)