Si | - Silicon | Ge | - Germanium |
GaP | - Gallium Phosphide | GaAs | - Gallium Arsenide |
InAs | - Indium Arsenide | C | - Diamond |
GaSb | - Gallium Antimonide | InSb | - Indium Antimonide |
InP | - Indium Phosphide | GaAs1-xSbx | - Gallium Arsenide Antimonide |
AlxGa1-xAs | - Aluminium Gallium Arsenide | ||
AlN | - Aluminium Nitride | InN | - Indium Nitride |
BN | - Boron Nitride | GaN | - Gallium Nitride |
We are going to add new data for: | |||
GaxIn1-xAsySb1-y | - Gallium Indium Arsenide Antimonide | GaxIn1-xP | - Gallium Indium Phosphide |
GaxIn1-xAs | - Gallium Indium Arsenide | GaxIn1-xSb | - Gallium Indium Antimonide |
InAs1-xSbx | - Indium Arsenide Antimonide | GaxIn1-xAsyP1-y | - Gallium Indium Arsenide Phosphide |
Si1-xGex | - Silicon Germanium | SiC | - Silicon Carbide |
This section is intended to systematize parameters of semiconductor compounds and heterostructures based on them. Such a WWW-archive has a number of advantages: in particular, it enables physicists, both theoreticians and experimentalists, to rapidly retrieve the semiconducting material parameters they are interested in. In addition, physical parameters - optical, electrical, mechanical, etc. - will be presented in the framework of the electronic archive for both the known and new semiconducting compounds. As the starting point in creating the database served the voluminous reference book "Handbook Series on Semiconductor Parameters" vol. 1,2 edited by M. Levinstein, S. Rumyantsev and M. Shur, World Scientific, London, 1996, 1999. We express sincere gratitude to M.E. Levinstein for help and attention to this work. A great number of reference books and original papers cited at the end of this section have been used in compiling the information database. We would like to express our warmest gratitude to all colleages presented their original data and literature references to complete these archive. If you find these archive pages helpful, and use the data retrieved through the server for your reseach, we would appreciate acknowledging it in your papers. We would be indebted very much for any of your further suggestions and comments. |