
Basic Parameters at 300 K
Band structure and carrier concentration
Basic
Parameters
Band
Structure
Intrinsic
carrier concentration
Effective
Density of States in the Conduction and Valence Band
Temperature
Dependences
Dependence
on Hydrostatic Pressure
Band
Discontinuities at Heterointerfaces
Energy gap narrowing at high doping levels
Effective
Masses and Density of States
Donors
and Acceptors
Electrical Properties
Basic Parameters of Electrical Properties
Mobility and Hall Effect
Two-Dimensional Electron and Hole Gas Mobility in Heterostructures
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters
Optical properties
Thermal properties
Basic
parameters
Thermal
conductivity
Lattice
properties
Mechanical properties
Basic
Parameters
Elastic
Constants
Micro
Hardness
Acoustic
Wave Speeds
Phonon
Frequencies
Magnetic
properties
References