SiC - Silicon Carbide
Basic Parameters at 300 K
Band structure and carrier concentration
        Basic Parameters
        Band Structure
        Intrinsic carrier concentration
        Effective Density of States in the Conduction and Valence Band
        Temperature Dependences
        Dependence on Hydrostatic Pressure
        Energy Gap Narrowing at High Doping Levels
        Effective Masses and Density of States
        Donors and Acceptors

Electrical Properties
        Basic Parameters of Electrical Properties
        Mobility and Hall Effect
        Transport Properties in High Electric Fields.
        Impact Ionization.
        Recombination Parameters.
Optical properties
Thermal properties
        Basic parameters
        Thermal conductivity
        Lattice properties
Mechanical properties, elastic constants, lattice vibrations
        Basic Parameters
        Elastic Constants
        Acoustic Wave Speeds
        Phonon Frequencies
        
Piezoelectric, Thermoelectic and Magnetic Properties
Impurities and defects.
References

Forum SiC on Physical Properties of Semiconductors

Announcement.
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