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1. If in 1.5 year after the strart of the project a tecnology for GaInAsN layers growth will be developed
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25%
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2. If in two years after the strart of the project low resistivity p-type contact layers are realized
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15%
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3. If in two years after the strart of the project photopumped green laser will be realized
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20%
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4. If at the end of the project a tecnology for GaInAsN light-emitting diodes will be developed
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20%
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5. If at the end of the project laser diode working in the green spectral range will be achieved
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20%
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