• Participants
  
  
• Background
  and Justification
  
  
• Current Status
  
  
• Methodology
  
  
• Criteria for Success
  
  
• Summary Report
  
  
• List of Publications
  
  

List of Publications

1. Investigation of MOVPE-grown GaN layers doped with As atoms
   A.F. Tsatsul'nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudryavtsev, N.N. Ledentsov, W.V. Lundin, M.V. Maksimov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, A. Hoffmann
   Semiconductors 33(7) pp. 728-730 (1999)
   
   
2. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
   A.V. Sakharov, W.V. Lundin, V.A. Semenov, A.S. Usikov, N.N. Ledentsov, A.F. Tsatsul'nikov, M.V. Badakova
   Tech.Phys.Lett. 25(6) (1999) pp. 462-465
   
   
3. Surface-mode lasing from stacked InGaN insertions in a GaN matrix
   A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N.  Ledentsov, A. Hoffmann, D. Bimberg
   Appl. Phys. Lett. 74 (26), 3921-3923 (1999)
   
   
4. Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser
   I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
   Appl. Phys. Lett. 75 (9), 1192-1194 (1999)
   
   
5. Incorporation of As in GaN layers during MOCVD growth
   A.F. Tsatsul’nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudravtsev, N.N. Ledentsov, V.W. Lundin, M.V. Maximov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, A. Hoffmann, D. Bimberg
   8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, June 8-11, 1999, Prague, Czech Republic p. 41-44 (workshop booklet)
   
   
6. MOVPE growth of strain compensated Al0.15Ga0.85N/GaN Bragg mirrors on Al0.08Ga0.92N buffer layers.
   W.V. Lundin, A.S. Usikov, I.L. Krestnikov, A.V. Sakharov, A.F. Tsatsul’nikov, M.V. Baidakova, V.V. Tret’iakov, N.N.  Ledentsov
   8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, June 8-11, 1999, Prague, Czech Republic p. 49-53 (workshop booklet)
   
   
7. Characterization of the InGaN/GaN heterostructures grown by MOCVD in argon ambient
   A.S. Usikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, I.L. Krestnikov, M.V. Baidakova, V.V. Ratnikov
   8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, June 8-11, 1999, Prague, Czech Republic p. 57-60 (workshop booklet)
   
   
8. Surface-mode lasing from optically pumped InGaN/GaN heterostructures
   A.V. Sakharov, W.V. Lundin, V.A. Semenov, A.S. Usikov, N.N. Ledentsov, A.F. Tsatsul'nikov, Zh.I. Alferov, A. Hoffmann, D. Bimberg
   Proc. of 7th Int. Symp. “Nanostructures:Physics and Technology” St.Petersburg, Russia, June 14-18 1999 pp. 124-127
   
   
9. Growth and characterization of InGaN/GaN nanoscale heterostructures
   W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, M.V. Baidakova, I.L. Krestnikov, N.N. Ledentsov
   Proc. of 7th Int. Symp. “Nanostructures:Physics and Technology” St. Petersburg, Russia, June 14-18 1999 pp. 485-488
   
   
10. Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix.
    A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg.
    The Third International Conference on Nitride Semiconductors, July 4-9, 1999, Montpellier, France, Phys. Stat. Sol.(a), (1999).
    
    
11. Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature.
    I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg.
    The Third International Conference on Nitride Semiconductors, July 4-9, 1999, Montpellier, France, Phys. Stat. Sol.(a), (1999).
    
    
12. Light Confinement in a Quantum Dot
    S.A. Maksimenko, G.Ya. Slepyan, N.N. Ledentsov, V.P. Kalosha, A. Hoffmann, D. Bimberg,
    Semiconductor Sci. and Techn. , June 2000, vol. 15, pp. 491-496.
    
    
13. Electromagnetic response of 3D arrays of quantum dots
    S.A. Maksimenko, G.Ya. Slepyan, V.P. Kalosha, S.V. Maly, N.N. Ledentsov, J. Herrmann, A. Hoffmann, D. Bimberg,
    J. Electronic Materials, May 2000, vol. 29, pp. 494-503.
    
    
14. Lasing in Vertical Direction in InGaN/GaN/AlGaN structures with InGaN Quantum Dots
    I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plautt, A. Hoffmann, D. Bimberg
    Fiz. Tekh. Poluprovodn., 34, 496-503 (2000) - Semiconductors, 34, (2000)
    
    
15. Vertical Cavity Surface-Emitting Lasers using InGaN Quantum Dots
    N.N. Ledentsov, Zh.I. Alferov, I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, I.P. Soshnikov, A.F. Tsatsul’nikov, D. Bimberg, A. Hoffmann
    Compound Semiconductor, 5 (9), 61-64 (1999).
    
    
16. Lasing in Vertical Direction in Structures with InGaN Quantum Dots
    I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, D. Gerthsen, A.C. Plaut, J. Holst, A. Hoffmann, D. Bimberg
    Physica Status Solidi, 180, 91-96 (2000).
    
    
17. Quantum Dots Formed by Ultrathin Insertions in Wide-Gap Matrices
    N.N. Ledentsov, I.L. Krestnikov, M. Strassburg, R. Engelhardt, S. Podt, R. Heitz, U.W. Pohl, A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.S. Usikov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen
    Thin Solid Films 367 (2000) 40-47
    
    
18. Formation of GaAsN nanoinsertions in a GaN matrix using metal-organic chemical vapor deposition
    A.F. Tsatsul’nikov, I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, A.P. Kartashova, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Strittmatter, A. Hoffmann, D. Bimberg, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Plaut
    Journal of Semiconductor Science and Technology, 15 (7), p.766, 2000.
    
    
19. Study of the III-Nitrides MOCVD growth process with in-situ optical reflectance monitoring
    W.V. Lundin, A.S. Usikov, A.I. Besulkin, A.V. Sakharov, V.A. Semenov, E.E. Zavarin, D.A. Bedarev, N.N. Ledentsov, A. Hoffmann, D. Bimberg
    The Fourth European GaN Workshop (EGW4) Nottingham, UK 2-5 July 2000 (to be published in J Cr Gr)
    
    
20. Influence of the Thick GaN Buffer Growth Conditions on the Electroluminescence Properties of GaN/InGaN Multilayer Heterostructures
    A.S. Usikov, W.V. Lundin, D.A. Bedarev, E.E. Zavarin, A.V. Sakharov, A.F. Tsatsul’nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
    International Nitride Workshop IWN2000 Nagoya, Japan September 2000
    
    
21. Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays.
    S.A. Maksimenko, G.Ya. Slepyan, V.P. Kalosha, N.N. Ledentsov, A. Hoffmann, and D. Bimberg
    European Materials Research Society 2000 Spring Meeting, May 30 –June 2, 2000, Strasbourg, France, Final book of abstracts, p. C-12.
    
    
22. Light confinement in quantum dots (Invited.).
    S.A. Maksimenko, G.Ya. Slepyan, N.N. Ledentsov, V.P. Kalosha, A. Hoffmann, and D. Bimberg,
    8th Intern. Symposium Nanostructures: physics and technology, St. Petersburg, Russia, 19-23 June, 2000, Proceedings, pp. 219-223.
    
    
23. Effective Boundary Conditions In Electrodynamics of Nanostructures (Invited.).
    G.Ya. Slepyan and S.A. Maksimenko
    8th International Conference on Electromagnetics of Complex Media, Bianisotropic'2000, Lisboa, Portugal, September 27-29, 2000, Proceedings, pp. 175-180.
    
    
24. Magnetic Eigenmodes In QD-Based Resonant Active Composites.
    S.A. Maksimenko, G.Ya. Slepyan, N.N. Ledentsov, V.P. Kalosha, A. Hoffmann, and D. Bimberg
    8th International Conference on Electromagnetics of Complex Media, Bianisotropic'2000, Lisboa, Portugal, September 27-29, 2000, Proceedings, pp. 245-248
    
    
25. Electrodynamic properties of carbon nanotubes.
    S.A. Maksimenko and G.Ya. Slepyan
    " Electromagnetic Fields in Unconventional Structures and Materials", Ed. by: O.N. Singh and A.Lakhtakia, John Wiley & Sons, Inc., New York, 2000, pp. 217-255.
26. Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays.
    S.A. Maksimenko, G.Ya. Slepyan, V.P. Kalosha, N.N. Ledentsov, A. Hoffmann, and D. Bimberg
    Mater. Sci. & Eng. B, Vol 82/1-3, pp 215-217, 2001.
    
    
27. Effective medium approach for planar QD structures.
    G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, A. Hoffmann, and D. Bimberg
    9th Intern. Symposium Nanostructures: physics and technology, St. Petersburg, Russia, June 18-22, 2001, Proceedings, pp. 331-334.
    
    
28. Effective boundary conditions for planar quantum-dot structures.
    G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, A. Hoffmann, and D. Bimberg
    Phys. Rev. B, Vol. 64, 15 September, 2001, No 125326.
    
    
29. Local field effects in an isolated quantum dots: self-consistent microscopic approach.
    S.A. Maksimenko, G.Ya. Slepyan, A. Hoffmann, and D. Bimberg
    Int. Conf. Optics and Excitons in Confined Systems, OECS-07, September 3-7, 2001, Montpellier, France.
    
    
30. Influence of Growth Interruptions and Gas Ambient on Optical and Structural Properties of InGaN/GaN Multilayer Structures
    A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, D.A. Bedarev, A.F. Tsatsul’nikov, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, and D. Bimberg
    International Nitride Workshop IWN2000 Nagoya, Japan september 2000
    
    
31. Formation of GaAsN nanoinsertions in a GaN matrix.
    A.F. Tsatsul’nikov, I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, D.A. Bedarev, A.S. Usikov, B.Ya. Ber, V.V. Tret’yakov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, T. Riemann, J. Christen, Yu.G. Musikhin, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Plaut
    International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 2000.
    
    
32. Local field effects in an isolated quantum dots: self-consistent microscopic approach.
    S.A. Maksimenko, G.Ya. Slepyan, A. Hoffmann, and D. Bimberg
    Pysica Status Solidi (a), V. 190, No. 2, (2002).
    
    
33. Effect of Nonlocality in Excitonic Composites.
    S.A. Maksimenko, G.Ya. Slepyan
    9th International Conference/Workshop on Electromagnetics of Complex Media Bianisotropics'2002, 8-10 May, 2002, Marrakech, Morocco.
    
    
34. Interaction Of Quantum Light With Nanocomposites: Local-Field Effects
    S.A. Maksimenko, G.Ya. Slepyan, A. Hoffmann, and D. Bimberg
    9th International Conference/Workshop on Electromagnetics of Complex Media Bianisotropics'2002, 8-10 May, 2002, Marrakech, Morocco.
    
    
35. Local field effects in interaction of quantum dots with entangled photonic states
    S.A. Maksimenko, G.Ya. Slepyan, I.V. Bondarev, A. Hoffmann, and D. Bimberg
    9th Int. Conf. On Quantum Optics, 14-17, May, 2002, Minsk, Belarus
    
    
36. Time-Resolved Studies of InGaN/GaN Quantum Dots
    I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsul'nikov, Yu.G. Musikhin, D. Gerthsen, N.N. Ledentsov, A. Hoffmann, and D. Bimberg
    Physica Status Solidi (a) 192 (1), 49-53 (2002)
    
    
37. Quantum dot origin of luminescence in InGaN-GaN structures
    I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.F. Tsatsul'nikov, A.S. Usikov, Zh.I. Alferov, Yu.G. Musikhin, D. Gerthsen
    Phys. Rev. B 66, 155310 (2002)